HTB1A60/HTB1A80 4 Quadrants Sensitive TRIAC Symbol FEATURES Repetitive Peak Off-State Voltage : 600V/800V R.M.S On–State Current (IT(RMS) = 1A) Sensitive Gate Trigger Current - 5[mA] of IGT at I, II and III Quadrants. - 12[mA] of IGT at IV Quadrant. TO-92 Applications T1 G T2 AC power or phase control through low output current of MCU or IC suck like Heater, Solenoid valve control, etc. General Description Semihow’s sensitive TRIAC product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage. It is generally suitable for power and phase control in ac application. Absolute Maximum Ratings Symbol (TJ=25℃ unless otherwise specified ) Parameter VDRM Repetitive Peak Off-State Voltage VRRM Repetitive Peak Reverse Voltage IT(AV) Average On-State Current IT(RMS) R.M.S. On-State Current ITSM Surge On-State Current ½ cycle, 50Hz/60Hz, Sine wave, Non repetitive Fusing Current t = 10ms Forward Peak Gate Power Dissipation TJ = 125 °C Forward Average Gate Power Dissipation IFGM VRGM I2t PGM PG(AV) TJ TSTG Ratings Conditions Sine wave, 50/60Hz, Gate open Unit HTB1A60 HTB1A80 600 800 V 600 800 V 0.9 A 1 A 12/13 A 0.7 A2S 2 W TJ = 125 °C, over any 20ms 0.2 W Forward Peak Gate Current TJ = 125 °C, pulse width ≤ 20us 0.5 A Reverse Peak Gate Voltage TJ = 125 °C, pulse width ≤ 20us 6 V Operating Junction Temperature -40~+125 oC Storage Temperature -40~+150 oC Full sine wave, TC = 72oC ◎ SEMIHOW REV.A1,March 2013 HTB1A60_HTB1A80 VDRM = 600V/800V IT(RMS) = 1 A ITSM = 13 A IGT = 5mA/12mA (TJ=25℃ unless otherwise specified ) Symbol Parameter IDRM Repetitive Peak Off-State Current IRRM Repetitive Peak Reverse Current IGT Gate Trigger Current VGT Gate Trigger Voltage Voltage1 Conditions VD = VDRM VD = VDRM Min Typ Max Unit TJ=25oC - - 50 uA TJ=125oC - - 5 mA TJ=25oC - - 50 uA TJ =125oC - - 5 mA 1+, 1-, 3- - - 5 mA 3+ - - 12 mA 1+, 1-, 3- - - 1.5 V 3+ - - 2.0 V =125oC 0.2 - - V - 1.2 1.6 V 10 - - V/us - - 5 mA Min Typ Max Unit VD = 12V, RL=330Ω VD = 12V, RL=330Ω VGD Non-Trigger Gate VTM Peak On-State Voltage IT = 1.4A, IG = 20mA dv/dt Critical Rate of Rise of Off-State Voltage VD = 2/3 VDRM, TJ=125oC Holding current IT= 0.2A IH VD = 12V, RL=330Ω, TJ Notes : 1. Pulse Width ≤ 1.0ms, Duty Cycle ≤ 1% Thermal Characteristics Symbol Parameter Conditions RθJC Thermal Resistance Junction to Case 48 oC/W RθJA Thermal Resistance Junction to Ambient 150 oC/W ◎ SEMIHOW REV.A1,March 2013 HTB1A60_HTB1A80 Electrical Characteristics HTB1A60_HTB1A80 Typical Characteristics 130 180o 150o 1.0 Power dissipation, PD [W] Maximum allowable case temperature, TC [oC] 1.2 120o 0.8 0.6 90o 0.4 o 60 0.2 30o 0.0 0.0 0.2 0.4 0.6 0.8 1.0 30o 120 60o 110 100 90o 90 120o 80 150o 180o 70 0.0 0.2 Fig 1. R.M.S. current vs. Power dissipation 0.6 0.8 1.0 1.2 Fig 2. R.M.S. current vs. Case temperature 101 15 Surge on state current, ITSM [A] Gate voltage, VG [V] 0.4 R.M.S. on state current, IT(RMS) [A] R.M.S. on state current, IT(RMS) [A] PGM(2W) 25[oC] I+GT3 PG(AV)(0.2W) 100 25[oC] I+GT1 I-GT1 I-GT3 12 9 60Hz 50Hz 6 3 VGD 10-1 100 101 102 0 100 103 101 Gate current, IG [mA] Fig 4. Surge on state current rating (Non-repetitive) Fig 3. Gate power characteristics 2.5 3.0 2.0 1.5 I+GT1 I-GT1 I-GT3 1.0 VGT(25oC) X 100(%) 2.0 VGT(toC) IGT(25oC) X 100(%) 2.5 IGT(toC) 102 Time [cycles] 1.5 V+GT1 V-GT1 V+GT3 V-GT3 1.0 0.5 0.5 I+GT3 0.0 -50 -25 0 25 50 75 100 125 150 Junction Temperature, TJ[oC] Fig 5. Gate trigger current vs. junction temperature 0.0 -50 -25 0 25 50 75 100 125 150 Junction temperature, TJ[oC] Fig 6. Gate trigger voltage vs. junction temperature ◎ SEMIHOW REV.A1,March 2013 HTB1A60_HTB1A80 Typical Characteristics 103 TJ=25oC Thermal impedance [oC/W] Instantaneous on state current, IT [A] 101 TJ=125oC 100 RS=0.16Ω VTO=1.10V 10-1 0 1 2 3 4 5 102 101 100 10-2 10-1 Instantaneous on state voltage, VT [V] 100 101 Pulse Time [sec] Fig 7. Instantaneous on state current vs. Instantaneous on state voltage Fig 8. Thermal Impedance vs. pulse time Measurement of gate trigger current RL RL RG VG (1) Quadrant I VDD RG VG (2) Quadrant II RL VDD RG VG (3) Quadrant III RL VDD VDD RG VG (4) Quadrant IV Note. Whole parameter and test condition can not be over absolute maximum ratings in this datasheet. ◎ SEMIHOW REV.A1,March 2013 TO-92 BULK 3.71±0.2 4.58±0.25 3° 4.58±0.25 4° 14.47±0.5 0.46±0.1 1.27typ 3.6±0.25 1.02±0.1 3.71±0.25 1.27typ ◎ SEMIHOW REV.A1,March 2013 HTB1A60_HTB1A80 Package Dimension HTB1A60_HTB1A80 Package Dimension W0 W W1 H0 H W2 H1 TO-92 TAPING D 0 F1 F2 P1 P2 P Dimension [mm] Item Symbol Reference Tolerance Component pitch P 12.7 ±0.5 Side lead to center of feed hole P1 3.85 ±0.5 Center lead to center of feed hole P2 6.35 ±0.5 FI,F2 2.5 +0.2/-0.1 Carrier Tape width W 18.0 +1.0/-0.5 Adhesive tape width W0 6.0 ±0.5 Tape feed hole location W1 9.0 ±0.5 Adhesive tape position W2 Lead pitch 1.0 MAX Center of feed hole to bottom of component H 19.5 ±1 Center of feed hole to lead form H0 16.0 ±0.5 Component height H1 Tape feed hole diameter D0 27.0 max 4.0 ±0.2 ◎ SEMIHOW REV.A1,March 2013