SEMiX553GAL128Ds Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 533 A Tc = 80 °C 379 A 300 A ICnom ICRM SEMiX® 3s SPT IGBT Modules ICRM = 2xICnom 600 A -20 ... 20 V 10 µs -40 ... 150 °C Tc = 25 °C 421 A Tc = 80 °C 289 A 300 A VGES tpsc VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V Tj = 125 °C Tj Inverse diode IF SEMiX553GAL128Ds Tj = 150 °C IFnom Features • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders up to 20 kHz IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2300 A -40 ... 150 °C Tc = 25 °C 521 A Tc = 80 °C 347 A 300 A Tj Freewheeling diode IF Tj = 150 °C IFnom IFRM IFRM = 2xIFnom 600 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 2300 A -40 ... 150 °C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 1 min 600 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.9 2.35 V Tj = 125 °C 2.1 2.55 V Tj = 25 °C 1 1.15 V Tj = 125 °C 0.9 1.05 V Tj = 25 °C 3.0 4.0 mΩ 4.0 5.0 mΩ 5 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 300 A VGE = 15 V chiplevel VCE0 rCE VGE = 15 V Tj = 125 °C VGE(th) VGE=VCE, IC = 12 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 25 °C 4.5 Tj = 125 °C mA f = 1 MHz 28.3 nF f = 1 MHz 1.86 nF f = 1 MHz 1.17 nF QG VGE = - 8 V...+ 15 V 2880 nC RGint Tj = 25 °C 1.33 Ω GAL © by SEMIKRON Rev. 14 – 16.12.2009 1 SEMiX553GAL128Ds Characteristics Symbol Conditions td(on) VCC = 600 V IC = 300 A tr Eon td(off) tf RG on = 3 Ω RG off = 3 Ω Eoff Rth(j-c) ® SEMiX 3s SPT IGBT Modules SEMiX553GAL128Ds Features rF • Homogeneous Si • SPT = Soft-Punch-Through technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders up to 20 kHz Qrr Err Rth(j-c) rF Qrr Err Rth(j-c) max. Unit 185 Tj = 125 °C 65 ns Tj = 125 °C 27 mJ Tj = 125 °C 635 ns Tj = 125 °C 80 ns Tj = 125 °C 33 mJ ns 0.061 K/W Tj = 25 °C 2.0 2.50 V Tj = 125 °C 1.8 2.3 V Tj = 25 °C 0.75 1.1 1.45 V Tj = 125 °C 0.5 0.85 1.2 V Tj = 25 °C 2.5 3.0 3.5 mΩ Tj = 125 °C 2.7 3.2 3.7 mΩ IF = 300 A Tj = 125 °C di/dtoff = 5400 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 300 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 300 A VGE = 0 V chip VF0 IRRM min. Tj = 125 °C Tj = 25 °C 325 A 46 µC 17 mJ 2.0 Tj = 125 °C 0.11 K/W 2.5 V 1.8 2.3 V Tj = 25 °C 0.75 1.1 1.45 V Tj = 125 °C 0.5 0.85 1.2 V Tj = 25 °C 2.5 3.0 3.5 mΩ 3.2 3.7 mΩ Tj = 125 °C IF = 300 A Tj = 125 °C di/dtoff = 5400 A/µs T = 125 °C j VGE = -15 V T j = 125 °C VCC = 600 V per diode 2.7 325 A 46 µC 17 mJ 0.11 K/W Module LCE RCC'+EE' res., terminal-chip Rth(c-s) per module Ms to heat sink (M5) 20 nH TC = 25 °C 0.7 mΩ TC = 125 °C 1 mΩ 0.04 to terminals (M6) Mt K/W 3 5 Nm 2.5 5 Nm Nm w 300 g Temperatur Sensor R100 Tc=100°C (R25=5 kΩ) B100/125 R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 ± 5% Ω 3550 ±2% K GAL 2 Rev. 14 – 16.12.2009 © by SEMIKRON SEMiX553GAL128Ds Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 14 – 16.12.2009 3 SEMiX553GAL128Ds Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 14 – 16.12.2009 © by SEMIKRON SEMiX553GAL128Ds SEMiX 3s spring configuration © by SEMIKRON Rev. 14 – 16.12.2009 5 SEMiX553GAL128Ds * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. 6 Rev. 14 – 16.12.2009 © by SEMIKRON