BC546…BC550 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier application These transistors are subdivided into three groups A, B and C according to their current gain. 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Symbol BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 Collector Emitter Voltage Value 80 50 30 65 45 30 VCBO VCEO Emitter Base Voltage Unit V V VEBO 6 V Collector Current (DC) IC 100 mA Peak Collector Current ICM 200 mA Total Power Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 65 to + 150 O C C Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 2 mA Current Gain Group A B C Collector Base Cutoff Current at VCB = 30 V Emitter Base Cutoff Current at VEB = 5 V Collector Base Breakdown Voltage at IC = 100 µA Collector Emitter Breakdown Voltage at IC = 1 mA Emitter Base Breakdown Voltage at IE = 10 µA BC546 BC547, BC550 BC548, BC549 BC546 BC547, BC550 BC548, BC549 Symbol Min. Max. Unit hFE hFE hFE 110 200 420 220 450 800 - ICBO - 15 nA IEBO - 100 nA 80 50 30 65 45 30 - 6 - V(BR)CBO V(BR)CEO V(BR)EBO SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007 V V V BC546…BC550 Characteristics at Ta = 25 OC Parameter Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA at IC = 100 mA, IB = 5 mA Base Emitter On Voltage at VCE = 5 V, IC = 2 mA at VCE = 5 V, IC = 10 mA Transition Frequency at VCE = 5 V, IC = 10 mA, f = 100 MHz Collector Base Capacitance at VCB = 10 V, f = 1 MHz Symbol Min. Max. Unit VCE(sat) - 0.25 0.6 V VBE(on) 0.55 - 0.7 0.77 V fT 100 - MHz Ccb - 6 pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 27/12/2007