MMBTRC231S...MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter Absolute Maximum Ratings (Ta = 25 OC) Parameter SOT-23 Plastic Package Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 15 V Emitter Base Voltage VEBO 5 V IC 600 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O Collector Current Total Power Dissipation Characteristics at Ta = 25 OC Parameter C C Symbol Min. Typ. Max. Unit hFE 200 - 800 - Collector Base Breakdown Voltage at IC = 50 µA V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at IC = 1 mA V(BR)CEO 15 - - V Emitter Base Breakdown Voltage at IE = 50 µA V(BR)EBO 5 - - V ICBO - - 0.5 µA VCE(sat) - - 80 mV fT - 200 - MHz R1 - 2.2 10 4.7 - KΩ DC Current Gain at VCE = 5 V, IC = 50 mA Collector Base Cutoff Current at VCB = 30 V Collector Emitter Saturation Voltage at IC = 50 mA, IB = 2.5 mA Transition Frequency at VCE = 10 V, -IE = 50 mA, f = 100 MHz Input Resistor MMBTRC231S MMBTRC233S MMBTRC234S SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 07/07/2008