MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: ‧A collector current is large. ‧Collector saturation voltage is low. SOT-23 Plastic Package -VCE(sat) : 250mV(Max.) at -IC=200mA/-IB=10mA Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage -VCBO 15 V Collector Emitter Voltage -VCEO 12 V -IC 500 mA -ICP 1 A Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current 1) Collector Power Dissipation 1) C C Single pulse, PW=1ms SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTSA2018 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit hFE 270 - 680 - -ICBO - - 100 nA -V(BR)CBO 15 - - V -V(BR)CEO 12 - - V -V(BR)EBO 6 - - V -VCE(sat) - - 250 mV fT - 260 - MHz Cob - 6.5 - pF DC Current Transfer Ratio at -IC=10mA, -VCE=2V Collector Cutoff Current at -VCB=15V Collector Base Breakdown Voltage at -IC=10µA Collector Emitter Breakdown Voltage at -IC=1mA Emitter Base Breakdown Voltage at -IE=10µA Collector Emitter Saturation Voltage at -IC=200mA, -IB=10mA Transition Frequency at -VCE=2V, -IE=10mA, f=100MHz Output Capacitance at -VCB=10V, f=1MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005