ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage -VCBO 30 V Collector Emitter Voltage -VCEO 20 V Emitter Base Voltage -VEBO 6 V Collector Current - DC Collector Current - Pulse 1) -IC -ICP Collector Power Dissipation PC 5 10 0.5 2 Junction Temperature TJ 150 O Storage Temperature Range TS - 55 to + 150 O 1) 2) A W C C Single pulse, PW = 10 ms. When mounted on a 40 X 40 X 0.7 mm ceramic board. Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE hFE hFE 82 120 180 - 180 270 390 - -ICBO - - 0.5 µA -IEBO - - 0.5 µA Collector Base Breakdown Voltage at -IC = 50 µA -V(BR)CBO 30 - - V Collector Emitter Breakdown Voltage at -IC = 1 mA -V(BR)CEO 20 - - V Emitter Base Breakdown Voltage at -IE = 50 µA -V(BR)EBO 6 - - V Collector Emitter Saturation Voltage at -IC = 4 A, -IB = 100 mA -VCE(sat) - - 1 V fT - 120 - MHz Cob - 60 - pF DC Current Gain at -VCE = 2 V, -IC = 500 mA Current Gain Group Collector Base Cutoff Current at -VCB = 20 V Emitter Base Cutoff Current at -VEB = 5 V Transition Frequency at -VCE = 6 V, IE = 50 mA, f = 100 MHz Output Capacitance at -VCB = 20 V, IE = 0, f = 1 MHz P Q R SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/11/2007 ST 2SB1386U SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/11/2007 ST 2SB1386U SOT-89 PACKAGE OUTLINE SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 26/11/2007