MMBTSC3324 NPN Silicon Epitaxial Planar Transistor for audio frequency low noise amplifier applications. The transistor is subdivided into two groups G and L, according to its DC current gain. SOT-23 Plastic Package Features: z High voltage: VCEO=120V z High hFE:hFE=200-700 z Low noise:NF(2)=0.2dB(typ.),3dB(max) z Small package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA Base Current IB 20 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Collector Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC3324 Characteristics at Ta=25 OC DC Current Gain at VCE=6V, IC=2mA Symbol Min. Typ. Max. Unit G hFE 200 - 400 - L hFE 350 - 700 - VCE(sat) - - 0.3 V ICBO - - 0.1 µA IEBO - - 0.1 µA fT - 100 - MHz COB - 4 - pF NF - 0.5 6 Collector Emitter Saturation Voltage at IC=10mA, IB=1mA Collector Cut-off Current at VCB=120V Emitter Cut-off Current at VEB=5V Transition Frequency at VCE=6V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz at VCB=6V, IC=0.1mA Noise Figure f=100Hz, RG=10KΩ at VCB=6V, IC=0.1mA f=1KHz, RG=10KΩ dB NF - 0.2 3 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005