SEMTECH_ELEC MMBTSC2712

MMBTSC2712
NPN Silicon Epitaxial Planar Transistor
for audio frequency general purpose amplifier applications.
The transistor is subdivided into four groups O, Y, G and L,
according to its DC current gain.
Features
․High voltage and high current: VCEO=50V, IC=150mA(max)
․High hFE: hFE=70~700
․Low noise: NF=1dB(typ.), 10dB(max)
․Small package
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Symbol
Value
Unit
Collector Base Voltage
VCBO
60
V
Collector Emitter Voltage
VCEO
50
V
Emitter Base Voltage
VEBO
5
V
Collector Current
IC
150
mA
Base Current
IB
30
mA
Ptot
200
mW
Junction Temperature
Tj
125
O
Storage Temperature Range
TS
-55 to +125
O
Power Dissipation
C
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
MMBTSC2712
Characteristics at Tamb=25 OC
Symbol
Min.
Typ.
Max.
Unit
O
hFE
70
-
140
-
Y
hFE
120
-
240
-
G
hFE
200
-
400
-
L
hFE
350
-
700
-
ICBO
-
-
0.1
µA
IEBO
-
-
0.1
µA
VCE(sat)
-
-
0.25
V
fT
80
-
-
MHz
Cob
-
2
3.5
pF
NF
-
1
10
dB
DC Current Gain
at VCE=6V, IC=2mA
Collector Cutoff Current
at VCB=60V
Emitter Cutoff Current
at VEB=5V
Collector Saturation Voltage
at IC=100mA, IB=10mA
Transition Frequency
at VCE=10V, IC=1mA
Collector Output Capacitance
at VCB=10V, f=1MHz
Noise Figure
at VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005
MMBTSC2712
I C - VCE
P c - Ta
240
5.0
3.0
Collector power dissipation, mW
6.0
250
common
emitter
Ta=25 C
2.0
Ic - mA
160
1.0
80
0.5
IB=0.2mA
0
0
4
2
200
150
100
50
0
7
6
25
50
VCE - V
75
100
125
Ta ( C)
VCE(sat) - I C
hFE - I C
3
3000
common emitter
VCE=1V
VCE=6V
common
emitter
1
VCE(sat), V
hFE
1000
Ta=100 C
25
100
IC/IB=10
0.1
-25
Ta=100 C
25
-25
0
0.01
0.1
100
10
1
300
0.1
10
1
I C, mA
100
300
I C, mA
fT - I C
1000
VBE(sat) - I C
common
emitter
Ta=25 C
VCE=10V
30
common emitter
IC/IB=10
Ta=25 C
VBE(sat), V
100
1
0
0.1
100
10
1
I C, mA
0.1
0.1
10
1
100
300
I C, mA
I B - VBE
3000
Common emitter
1000 VCE=6V
100
I B, A
fT (MHz)
10
Ta=100 C
25 C
-25 C
10
1
0.3
0
0.4
0.8
1.2
VBE , V
SEMTECH ELECTRONICS LTD.
®
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 20/10/2005