MMBTSC2712 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ․High voltage and high current: VCEO=50V, IC=150mA(max) ․High hFE: hFE=70~700 ․Low noise: NF=1dB(typ.), 10dB(max) ․Small package SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 5 V Collector Current IC 150 mA Base Current IB 30 mA Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O Power Dissipation C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC2712 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit O hFE 70 - 140 - Y hFE 120 - 240 - G hFE 200 - 400 - L hFE 350 - 700 - ICBO - - 0.1 µA IEBO - - 0.1 µA VCE(sat) - - 0.25 V fT 80 - - MHz Cob - 2 3.5 pF NF - 1 10 dB DC Current Gain at VCE=6V, IC=2mA Collector Cutoff Current at VCB=60V Emitter Cutoff Current at VEB=5V Collector Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=10V, IC=1mA Collector Output Capacitance at VCB=10V, f=1MHz Noise Figure at VCE=6V, IC=0.1mA, f=1KHz, Rg=10KΩ SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC2712 I C - VCE P c - Ta 240 5.0 3.0 Collector power dissipation, mW 6.0 250 common emitter Ta=25 C 2.0 Ic - mA 160 1.0 80 0.5 IB=0.2mA 0 0 4 2 200 150 100 50 0 7 6 25 50 VCE - V 75 100 125 Ta ( C) VCE(sat) - I C hFE - I C 3 3000 common emitter VCE=1V VCE=6V common emitter 1 VCE(sat), V hFE 1000 Ta=100 C 25 100 IC/IB=10 0.1 -25 Ta=100 C 25 -25 0 0.01 0.1 100 10 1 300 0.1 10 1 I C, mA 100 300 I C, mA fT - I C 1000 VBE(sat) - I C common emitter Ta=25 C VCE=10V 30 common emitter IC/IB=10 Ta=25 C VBE(sat), V 100 1 0 0.1 100 10 1 I C, mA 0.1 0.1 10 1 100 300 I C, mA I B - VBE 3000 Common emitter 1000 VCE=6V 100 I B, A fT (MHz) 10 Ta=100 C 25 C -25 C 10 1 0.3 0 0.4 0.8 1.2 VBE , V SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005