MMBTSC930 NPN Silicon Epitaxial Planar Transistor for FM RF amp, mixer, osc, converter and IF amplifier. The transistor is subdivided into four groups, C, D, E and F, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector Base Voltage VCBO 30 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 5 V Collector Current IC 30 mA Power Dissipation Ptot 200 mW Junction Temperature Tj 125 O Storage Temperature Range TS -55 to +125 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005 MMBTSC930 Characteristics at Tamb=25 OC Symbol Min. Typ. Max. Unit Current Gain Group C hFE 40 - 80 - D hFE 60 - 120 - E hFE 100 - 200 - F hFE 160 - 320 - ICBO - - 1 μA IEBO - - 1 μA fT 170 300 - MHz Cre 1 1.3 1.8 pF Rbb․Cc - 20 36 ps NF - 4 - dB ton - 30 - ns toff - 30 - ns DC Current Gain at VCE=6V, IC=1mA Collector Cutoff Current at VCB=10V Emitter Cutoff Current at VEB=4V Gain Bandwidth Product at VCE=6V, IC=1mA Reverse Transfer Capacitance at VCB=6V, f=1MHz Base to Collector Time Constant at VCB=6V, IC=1mA, f=31.9MHz Noise Figure at VCB=6V, IC=1mA, f=100MHz Turn-on Time at VIN=+12V, VBE=-3V,appointed circuit Turn-off Time at VIN=-12V, VBE=+3V, appointed circuit SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 20/10/2005