MMDTA115W PNP Silicon Epitaxial Planar Digital Transistor Collector (Output) R1 Base (Input) R2 Emitter (Common) Resistance Values Type R1 (KΩ) R2 (KΩ) MMDTA115W 100 100 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage VEBO - 40 to + 10 V Collector Current -IC 100 mA Total Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 82 - - - Collector Base Cutoff Current at -VCB = 50 V -ICBO - - 500 nA Emitter Base Cutoff Current at -VEB = 5 V -IEBO - - 0.15 mA Collector Emitter Saturation Voltage at -IC = 5 mA, -IB = 0.25 mA -VCEsat - - 0.3 V Input Off Voltage at -VCE = 5 V, -IC = 100 µA -VI(off) 0.5 - - V Input On Voltage at -VCE = 0.3 V, -IC = 1 mA -VI(on) - - 3 V fT - 250 - MHz Input Resistance R1 70 100 130 KΩ Resistance Ratio R2/R1 0.8 1 1.2 - DC Current Gain at -VCE = 5 V, -IC = 5 mA Transition Frequency at -VCE = 10 V, IE = 5 mA, f = 100 MHz SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 11/04/2007