MMDT221F NPN Silicon Epitaxial Planar Transistor For digital circuits applications SOT-23 Plastic Package Collector (Output) Base (Input) R1 R2 Emitter (Common) Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 50 V IC 100 mA Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range TS -55 to +150 O Collector Current Total Power Dissipation C C Resistor Values Type R1 (KΩ) R2 (KΩ) MMDT221F 4.7 10 SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/03/2006 MMDT221F Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit hFE 30 - - - Collector Base Breakdown Voltage at IC = 10 µA V(BR)CBO 50 - - V Collector Emitter Breakdown Voltage at IC = 2 mA V(BR)CEO 50 - - V Collector Base Cutoff Current at VCB = 50 V ICBO - - 100 nA Collector Emitter Cutoff Current at VCE = 50 V ICEO - - 500 nA Emitter Base Cutoff Current at VEB = 6 V IEBO - - 1 mA Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.3 mA VCEsat - - 0.25 V Output Voltage Low Level at VCC = 5 V, VB = 2.5 V, RL = 1 KΩ VOL - - 0.2 V Output Voltage High Level at VCC = 5 V, VB = 0.5 V, RL = 1 KΩ VOH 4.9 - - V fT - 150 - MHz R1 3.3 4.7 6.1 KΩ R1/R2 0.37 - 0.57 - DC Current Gain at VCE = 10 V, IC = 5 mA Transition Frequency at VCB = 10 V, -IE = 2 mA, f = 200 MHz Input Resistor Resistor Ratio SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 31/03/2006