ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Symbol Value Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current IC(DC) 5 A Base Current IB(DC) 1 A IC(pulse) 8 A Total power dissipation (Ta = 25 OC) Ptot 1.3 W Total power dissipation (Tc = 25 OC) Ptot 20 W Tj 150 O TS -55 to +150 O Parameter Collector Current (pulse) 1) Junction Temperature Storage Temperature Range PW≦10ms, duty cycle≦50%. Characteristics at Ta = 25 OC C C 1) Parameter Symbol Min. Max. Unit hFE hFE hFE hFE hFE 100 160 200 60 50 200 320 400 - - Collector Cutoff Current at VCB = 50 V ICBO - 10 µA Emitter Cutoff Current at VEB = 7 V IEBO - 10 µA Base Saturation Voltage at IC = 2 A, IB = 0.2 A VBE(sat) - 1.2 V Collector Saturation Voltage at IC = 2 A, IB = 0.2 A VCE(sat) - 0.3 V Ton - 1 µs Tstg - 2.5 µs tf - 1 µs DC Current Gain at VCE = 1 V, IC = 2 A Current Gain Group M L K at VCE = 1 V, IC = 0.1 A at VCE = 1 V, IC = 5 A Turn-on time Storage time at IC = 2 A, IB1 = -IB2 = 0.2 A,RL = 5 Ω, VCC = 10 V Fall time SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 22/03/2006