ST 2SB772S PNP Silicon Epitaxial Transistor Medium Power Low Voltage Transistor The transistor is subdivided into three groups Q, P and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector-Base Voltage -VCBO 40 V Collector-Emitter Voltage -VCEO 30 V Emitter-Base Voltage -VEBO 5 V Collector Current -IC 3 A Peak Collector Current -ICM 7 A Base Current -IB 600 mA Collector Dissipation Ptot 500 mW Junction Temperature Tj 150 O Storage Temperature Range TS - 55 to + 150 O C C Characteristics (Ta = 25 OC) Symbol Min. Typ. Max. Unit hFE hFE hFE hFE 100 160 200 30 - 200 320 400 - - Collector Cutoff Current at -VCB = 30 V -ICBO - - 1 µA Emitter Cutoff Current at -VEB = 3 V -IEBO - - 1 µA Collector-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA -VCE(sat) - - 0.5 V Base-Emitter Saturation Voltage at -IC= 2 A, -IB = 200 mA -VBE(sat) - - 2 V Current Gain Bandwidth Product at -VCE = 5 V, -IC = 0.1 A fT - 80 - MHz Cob - 45 - pF Parameter DC Current Gain at -VCE = 2 V, -IC = 1 A Current Gain Group at -VCE = 2 V, -IC = 20 mA Output Capacitance at -VCB = 10 V, f = 1 MHz Q P E SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/10/2006 ST 2SB772S SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 04/10/2006