SEMTECH_ELEC ST2SB772S

ST 2SB772S
PNP Silicon Epitaxial Transistor
Medium Power Low Voltage Transistor
The transistor is subdivided into three groups
Q, P and E, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
-VCBO
40
V
Collector-Emitter Voltage
-VCEO
30
V
Emitter-Base Voltage
-VEBO
5
V
Collector Current
-IC
3
A
Peak Collector Current
-ICM
7
A
Base Current
-IB
600
mA
Collector Dissipation
Ptot
500
mW
Junction Temperature
Tj
150
O
Storage Temperature Range
TS
- 55 to + 150
O
C
C
Characteristics (Ta = 25 OC)
Symbol
Min.
Typ.
Max.
Unit
hFE
hFE
hFE
hFE
100
160
200
30
-
200
320
400
-
-
Collector Cutoff Current
at -VCB = 30 V
-ICBO
-
-
1
µA
Emitter Cutoff Current
at -VEB = 3 V
-IEBO
-
-
1
µA
Collector-Emitter Saturation Voltage
at -IC= 2 A, -IB = 200 mA
-VCE(sat)
-
-
0.5
V
Base-Emitter Saturation Voltage
at -IC= 2 A, -IB = 200 mA
-VBE(sat)
-
-
2
V
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 0.1 A
fT
-
80
-
MHz
Cob
-
45
-
pF
Parameter
DC Current Gain
at -VCE = 2 V, -IC = 1 A
Current Gain Group
at -VCE = 2 V, -IC = 20 mA
Output Capacitance
at -VCB = 10 V, f = 1 MHz
Q
P
E
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/10/2006
ST 2SB772S
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/10/2006