SONY CXM3517BER

SP7T Antenna Switch Module for GSM and UMTS or CDMA Dual Mode Handset
CXM3517BER
Description
This switch is one of a range of low insertion loss, good linearity and high power MMIC antenna switch modules
for GSM/UMTS or CDMA dual-mode handsets.
The Sony A.S.M. contains SP7T switch, a 1.8V CMOS decoder and a dual-LPF on GSM transmit paths.
The Sony GaAs junction gate pHEMT (JPHEMT) process is used for very low insertion loss and high linearity.
The excellent insertion loss contributes to good sensitivity and longer talk time.
* A.S.M. = Antenna Switch Module
(Applications: Quad Band GSM and Single Band UMTS or CDMA Dual-Mode Handset)
Features
‹ Low insertion loss: 0.80dB (Typ.) on Tx1 (GSM Low Band Tx)
0.80dB (Typ.) on Tx2 (GSM High Band Tx)
0.33dB (Typ.) on TRx (UMTS Band I)
‹ High attenuation: 30dB (Typ.) Tx1 @ 2nd Harmonic freq.
30dB (Typ.) Tx2 @ 2nd Harmonic freq.
‹ No DC blocking capacitors (Small device footprint)
Small package: VQFN-22P (2.6mm × 3.4mm × 0.8mm Typ.)
‹ Low voltage operation: VDD = +2.65V
‹ CMOS control line (CTLA/CTLB/CTLC)
‹ RX paths are changeable for band assignment
‹ Lead-free and RoHS compliant
Structure
GaAs Junction Gate pHEMT (JPHEMT) Switch, CMOS Decoder and Dual-LPF
Note on Handling
- GaAs MMIC’s are ESD sensitive devices. Special handling precautions are required.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license
by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating
the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
-1-
E08405-PS
CXM3517BER
Block Diagram
Ant
∗ Built-in CMOS decoder
F14
F7
F2
F1
F3
F4
F5
F6
F9
F15
F10
LPF2
LPF1
Tx1
Tx2
Rx1
Rx2
Rx4
Rx3
TRx
Tx1
GND
GND
Tx2
Pin Configuration
11
10
9
8
GND 12
GND 13
8
7 GND
7
6 GND
6
9
10
11
12
13
24 GND
Top View
VQFN-22P PKG
4 Rx4
(2.6mm × 3.4mm × 0.8mm Typ.)
4
GND 16
3 Rx3
3
ANT 17
2 Rx2
2
GND 18
1 GND
1
19
20
21
22
CTLA
TRx 15
CTLB
5
CTLC
5 Rx1
VDD
GND 14
14
16
23
GND
17
18
22
-2-
15
Bottom View
22
22
19
CXM3517BER
Pin Description
Pin No.
Symbol
Pin No.
Symbol
1
GND
13
GND
2
Rx2
14
GND
3
Rx3
15
TRx
4
Rx4
16
GND
5
Rx1
17
ANT
6
GND
18
GND
7
GND
19
VDD
8
Tx2 (GSM1800/1900)
20
CTLC
9
GND
21
CTLB
10
GND
22
CTLA
11
Tx1 (GSM850/900)
23
GND (Bottom)
12
GND
24
GND (Bottom)
Truth Table
State
*1
*2
Active path
1
Tx1
2
Tx2
Switch state*2
Vctl state
A
B
C
F1
F2
F3
F4
F5
F6
F7
F9
F10
F14
F15
H
H
L
H
L
L
L
L
L
L
H
H
L
H
H
L
L
L
H
L
L
L
L
L
L
H
L
H
3
Rx1
*1
L
L
L
L
L
H
L
L
L
L
H
L
H
H
4
Rx2 *1
L
L
H
L
L
L
H
L
L
L
H
L
H
H
5
Rx3 *1
L
H
H
L
L
L
L
H
L
L
H
L
H
H
6
Rx4
*1
L
H
L
L
L
L
L
L
H
L
H
L
H
H
7
TRx
H
L
H
L
L
L
L
L
L
H
H
H
L
L
Each RX path can be used from 869MHz to 1990MHz frequency, user can select these RX paths changeably.
State “L” means a switch “OFF”, state “H” means a switch “ON”.
-3-
CXM3517BER
Electrical Characteristics
Supply Voltage Value
(Ta = +25°C)
Item
Bias voltage (VDD)
Min.
Typ.
Max.
Unit
+2.5
+2.65
+3.3
V
Logic Value
(Ta = +25°C)
Item
State
Control voltage (CTL-A/B/C)
Min.
Typ.
Max.
High
+1.5
+1.8
+3.3
Low
0
—
+0.3
Absolute Maximum Ratings
Item
Ratings
Bias voltage (VDD)
4.3V (Ta: +25°C)
Control voltage (CTL-A/B/C)
4.3V (Ta: +25°C)
Input power max. [Tx1] *1
+36.5dBm (Duty cycle: 25%)
(Ta: +25°C)
Input power max. [Tx2] *1
+34.5dBm (Duty cycle: 25%)
(Ta: +25°C)
Input power max. [TRx] *1
+32dBm (Ta: +25°C)
Input power max. [Rx1, Rx2, Rx3, Rx4] *1
+13dBm (Ta: +25°C)
Operating temperature range
–30 to +90°C
Strage temperature range
–65 to +150°C
*1
FR-4 (4 layers), 30mm Sqr., t = 0.8mm
-4-
Unit
V
CXM3517BER
(VDD = 2.65V, Vctl = 0/1.8V, Ta: +25°C)
Item
Insertion
loss
Symbol
I.L
Min.
Typ.
Max.
Ant - Tx1
Path
*1
—
0.80
1.00
Ant - Tx2
*2
—
0.80
1.00
Ant - Rx1,
Rx2, Rx3, Rx4
*3
—
0.65
0.80
*4
—
0.85
1.00
*5
—
0.33
0.50
*8
—
0.25
0.40
Ant - TRx
Tx1 - Rx1,
Rx2, Rx3, Rx4
*1
824 to 915MHz
State 1
45
55
—
Tx1 - TRx
*1
824 to 915MHz
State 1
30
40
—
Tx1 - Tx2
*1
824 to 915MHz
State 1
18
21
—
*1
880 to 915MHz
State 3/4/5/6
22
26
—
State 3/4/5/6
30
40
—
Tx1 - Ant
Tx2 - Ant
Isolation
Iso
3fo
2fo
Harmonic
level
3fo
2fo
3fo
2fo
3fo
1760 to 1830MHz
State 1
26
31
—
*1
2640 to 2745MHz
State 1
26
31
—
*11
State 3/4/5/6
20
28
—
1710 to 1910MHz
State 3/4/5/6
19
23
—
Tx2 - Rx1,
Rx2, Rx3, Rx4
*2
1710 to 1910MHz
State 2
40
50
—
Tx2 - TRx
*2
1710 to 1910MHz
State 2
25
30
—
Tx2 - Tx1
*2
1710 to 1910MHz
State 2
28
31
—
*5
1920 to 2170MHz
State 7
40
50
—
*8
824 to 894MHz
State 7
45
55
—
*9
1710 to 1990MHz
State 7
45
55
—
*5
1920 to 2170MHz
State 7
30
39
—
*8
824 to 894MHz
State 7
20
26
—
*9
1710 to 1990MHz
State 7
30
39
—
*5
1920 to 2170MHz
State 7
20
24
—
*8
824 to 894MHz
State 7
30
38
—
*9
1710 to 1990MHz
State 7
20
25
—
TRx - Tx2
2fo
1710 to 1910MHz
*1
824 to 915MHz
TRx - Tx1
VSWR
*10
*2
TRx - Rx1,
Rx2, Rx3, Rx4
V.S.W.R.
Conditions
Ant - Tx1
824 to 915MHz
—
1.30
Ant - Tx2
1710 to 1910MHz
—
1.45
1.60
Ant - Rx1,
Rx2, Rx3,
Rx4, TRx
824 to 2170MHz
Tx1 - Ant
*1
Tx2 - Ant
*2
TRx - Ant
*5
TRx - Ant
*8
-5-
—
Unit
dB
dB
—
1.20
—
–48
–36
—
–48
–36
—
–52
–36
—
–43
–36
—
–54
–36
—
–53
–36
—
–60
–36
—
–58
–36
dBm
CXM3517BER
Item
Inter
modulation
distortion
Symbol
Path
Min.
Typ.
Max.
—
–107
–105
IMD2
TRx - Ant
IMD3
TRx - Ant
*7, *12
—
–106
–102
1648 to 1830MHz
25
30
—
2472 to 2745MHz
25
41
—
3296 to 3660MHz
20
26
—
3420 to 3820MHz
25
30
—
5130 to 5730MHz
25
33
—
Tx1 - Ant
Attenuation
Conditions
*6, *12
ATT
Tx2 - Ant
Unit
dBm
dB
Switching
time
Ts
90% OFF – 90% ON
—
3
5
μs
Control
current
Ictl
VDD = 2.65V, Vctl = 1.8V
—
5
20
μA
Supply
current
Idd
Active Mode
—
0.18
0.40
mA
Electrical characteristics are specified on Sony EVB and with all RF ports terminated with 50Ω.
*1
*2
*3
*4
*5
*6
*7
*8
*9
*10
*11
*12
Pin on Tx1: +34dBm, 824 to 915MHz,
VDD = 2.65V
Pin on Tx2: +32dBm, 1710 to 1910MHz, VDD = 2.65V
Pin on Ant: +10dBm, 869 to 960MHz,
VDD = 2.65V
Pin on Ant: +10dBm, 1805 to 1990MHz, VDD = 2.65V
Pin on TRx: +26dBm, 1920 to 2170MHz, VDD = 2.65V
Pin on TRx: +20dBm, 1950MHz, Pin on Ant: –15dBm, 190MHz, VDD = 2.65V
Pin on TRx: +20dBm, 1950MHz, Pin on Ant: –15dBm, 1760MHz, VDD = 2.65V
Pin on TRx: +26dBm, 824 to 894MHz,
VDD = 2.65V
Pin on TRx: +26dBm, 1710 to 1990MHz, VDD = 2.65V
Pin on Tx1: +5dBm, 1710 to 1910MHz, VDD = 2.65V
Pin on Tx2: +5dBm, 824 to 915MHz,
VDD = 2.65V
Measured with recommended circuit
-6-
CXM3517BER
11
GND
10
Tx2
GND
Tx1
GND
Recommended Circuit
9
8
12
7
GND
24
GND
GND
TRx
GND
13
14
6
VQFN-22P PKG
(2.6mm × 3.4mm × 0.8mm Typ.)
5
4
15
GND
Rx1
Rx4
Top View
ANT
L1
GND
3
17
2
23
GND
18
20
CTLC
VDD
19
1
21
Rx3
Rx2
GND
22
CTLA
C1
16
CTLB
GND
C2 100pF
Note) 1. No DC blocking capacitors are required on all RF ports.
2. DC levels of all RF ports are GND.
3. L1 (22nH) and C1 (22pF) are recommended on Ant port for ESD protection.
-7-
CXM3517BER
Pin 1 Index
(0.55)
2.6
3.4
(0.95)
(φ0.5)
PCB Layout Template
• PKG size: 3.4mm × 2.6mm
• Pin pitch: 0.4mm
: Land
∗ Metal mask thickness: 110µm
: Mask (Open area)
: Resist (Open area)
PKG line
3.8
3.4 (PKG line)
0.52
0.42
0.25
[Detailed view A]
0.72
0.62
0.4
0.3
R0.2
R0.2
C0.1
0.3
0.5
2.6
3.0
1.2
1.4
1.5
0.89
R0.05
0.2
0.05
R0.2
0.79
R0.2
0.1
0.15
0.21
0.26
0.4
A
∗ Mask corner R = 0.05mm
-8-
CXM3517BER
Recommended PCB Design
0.55
0.25
IC (VQFN-22P package)
PCB metal pattern
GND via hole for LPF (Light blue)
GND via hole for switch
1pin
0.58 1.00
0.80
2.31
1.45
0.09
(Unit: mm)
The positions of these via holes are
recommended for stable attenuation.
Independent GND
with via hole
-9-
CXM3517BER
Package Outline
(Unit: mm)
LEAD PLATING SPECIFICATIONS
ITEM
- 10 -
SPEC.
LEAD MATERIAL
COPPER ALLOY
SOLDER COMPOSITION
Sn-Bi Bi:1-4wt%
PLATING THICKNESS
5-18µm
Sony Corporation