MBRP745 MBRP745 Features • Low forward voltage drop • High frequency properties and switching speed • Guard ring for over-voltage protection Applications 1 • Switched mode power supply • Freewheeling diodes TO-220-2L 2 1. Cathode 2. Anode SCHOTTKY BARRIER RECTIFIER Absolute Maximum Ratings TC=25°°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage VR Maximum DC Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature @ TC = 110°C Value 45 Units V 45 V 7.5 A 150 A -65 to +150 °C Value 3.0 Units °C/W Value Units V Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) Electrical Characteristics (per diode) Symbol VFM * Parameter Maximum Instantaneous Forward Voltage IF = 7.5A IF = 7.5A IF = 15A IF = 15A IRM * Maximum Instantaneous Reverse Current @ rated VR TC = 25 °C TC = 125 °C TC = 25 °C TC = 125 °C 0.65 0.57 0.80 0.65 TC = 25 °C TC = 125 °C 1 40 mA * Pulse Test: Pulse Width=300µs, Duty Cycle=2% ©2004 Fairchild Semiconductor Corporation Rev. A, January 2004 MBRP745 Typical Characteristics 100 o T J=150 C Reverse Current, IR[mA] Forward Current, I F[A] 10 1 o TJ=125 C 0.1 o TJ=75 C o TJ=25 C 0.01 0.0 10 o TJ =125 C 1 o T J=75 C 0.1 0.01 o TJ=25 C 1E-3 0.5 1.0 0 1.5 10 Forward Voltage Drop, VF[V] Figure 1. Typical Forward Voltage Characteristics (per diode) C/W] o TJ=25 C 400 Transient Thermal Impedance [ Juntion Capacitance, C J[pF] o 500 300 200 100 90 80 0 10 20 30 40 1 100µ Figure 3. Typical Junction Capacitance (per diode) 10m 100m 1 10 Figure 4. Thermal Impedance Characteristics (per diode) 180 [A] 18 12 9 6 3 0 20 40 60 80 100 120 140 160 o Case Temperature, TC[ C] Figure 5. Forward Current Derating Curve ©2004 Fairchild Semiconductor Corporation Max. Forward Surge Current, I FSM DC 15 0 1m Pulse Duration [s] Reverse Voltage, VR[V] [A] 40 10 600 F(AV) 30 Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) 700 Average Forward Current, I 20 Reverse Voltage, VR[V] 160 140 120 100 80 60 40 1 10 100 Number of Cycles @ 60Hz Figure 6. Non-Repetitive Surge Current (per diode) Rev. A, January 2004 MBRP745 Package Dimsions TO-220-2L Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. A, January 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I6