SS6610/11G High-efficiency Synchronous Step-up DC/DC Converter PRODUCT SUMMARY DESCRIPTION High efficiency boost converter Output current up to 500mA No external diode required The SS6610/11G are high-efficiency step-up DC/DC converters, with a start-up voltage as low as 0.8V, and an operating voltage down to 0.7V. Consuming only 20µA of quiescent current, FEATURES these devices include a built-in synchronous rec- Quiescent supply current of 20mA. tifier that reduces size and cost by eliminating Power-saving shutdown mode (0.1µA typical). the need for an external Schottky diode, and Internal synchronous rectifier improves overall efficiency by minimizing On-chip low-battery detector. losses. Low battery hysteresis The switching frequency can range up to Pb-free, RoHS compliant MSOP-8 500KHz depending on the load and input voltage. The output voltage can be easily set by: APPLICATIONS 1) two external resistors for 1.8V to 5.5V; Palmtop and notebook computers. 2) connecting FB to OUT to get 3.3V; or PDAs 3) connecting FB to GND to get 5.0V. Wireless phones The peak current of the internal switch is fixed at 1A Pocket organizers. (SS6610G) or 0.65A (SS6611G) for design flexibility. Digital cameras. Hand-held devices with 1 to 3 cells of NiMH/NiCd batteries. TYPICAL APPLICATION CIRCUIT VIN ON + 47µF OFF 22µH LX SHDN SS6610G SS6611G Low Battery Detection LBI REF OUT Output 3.3V, 5.0V or adjustable from 1.8V to 5.5V + 47µF up to 300mA output LBO GND FB Low-battery Detect Out 0.1µF 4/21/2006 Rev.3.01 www.SiliconStandard.com 1 of 16 SS6610/11G ORDERING INFORMATION PIN CONFIGURATION SS6610GO TR SS6611GO TR MSOP-8 TOP VIEW Packing TR: Tape and reel Package type GO: RoHS-compliant MSOP-8 FB 1 8 OUT LX LBI 2 7 LBO 3 6 GND REF 4 5 SHDN Example: SS6610GO TR SS6610 in RoHS-compliant MSOP-8 package, shipped on tape and reel ABSOLUTE MAXIMUM RATINGS Supply voltage (OUT to GND) 8.0V Switch voltage (LX to GND) VOUT+ 0.3V SHDN , LBO to GND 6.0V LBI, REF, FB, to GND VOUT+0.3V Switch current (LX) -1.5A to +1.5A Output current (OUT) -1.5A to +1.5A Operating temperature range -40°C ~ +85°C Storage temperature range -65°C ~150°C TEST CIRCUIT Refer to the typical application circuit on page 1. 4/21/2006 Rev.3.01 www.SiliconStandard.com 2 of 16 SS6610/11G ELECTRICAL CHARACTERISTICS (VIN = 2.0V, VOUT = 3.3V (FB = VOUT),RL = PARAMETER ∞ , unless otherwise specified.) TEST CONDITIONS MIN. Minimum input voltage MAX. 0.7 Operating voltage Start-up voltage TYP. 1.1 RL=3kΩ (Note1) 0.8 Start-up voltage temp. coeff. V 5.5 V 1.1 V -2 Output voltage range VIN<VOUT 1.8 Output voltage FB = VOUT 3.17 3.3 UNIT mV/°C 5.5 FB=OUT SS6610G 300 350 Steady-state output current (VOUT =3.3V) SS6611G 150 300 (Note 2) FB=GND SS6610G 180 230 SS6611G 90 160 1.199 1.23 3.43 V mA (VOUT Reference voltage =5.0V) IREF= 0 Reference voltage temp. coeff. 1.261 0.024 V mV/°C Reference load regulation IREF = 0 to 100µA 10 30 mV Reference line regulation VOUT = 1.8V to 5.5V 5 10 mV/V 1.23 1.261 V 0.3 0.6 Ω FB , LBI input threshold Internal switch on-resistance 1.199 ILX = 100mA SS6610G 0.80 1.0 1.25 SS6611G 0.50 0.65 0.85 0.05 1 µA VFB = 1.4V , VOUT = 3.3V 20 35 µA SHDN = GND 0.1 1 µA VOUT= 3.3V ,ILOAD = 200mA 90 VOUT = 2V ,ILOAD = 1mA 85 LX switch current limit LX leakage current A VLX=0V~4V; VOUT=5.5V Operating current into OUT (Note 3) Shutdown current into OUT Efficiency 4/21/2006 Rev.3.01 www.SiliconStandard.com % 3 of 16 SS6610/11G ELECTRICAL CHARACTERISTICS (Continued) PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT LX switch on-time VFB =1V , VOUT = 3.3V 2 4 7 µs LX switch off-time VFB =1V , VOUT = 3.3V 0.6 0.9 1.4 µs FB input current VFB = 1.4V 0.03 50 nA LBI input current VLBI = 1.4V 1 50 nA SHDN input current V 0.07 50 nA LBO low output voltage VLBI = 0, ISINK = 1mA 0.2 0.4 µA LBO off leakage current V 0.07 1 µΑ SHDN LBO = 0 or VOUT = 5.5V, VLBI = 5.5V LBI hystereisis 50 VIL mV 0.2VOUT V SHDN input voltage VIH 0.8VOUT Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the input and output. Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load. Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual battery supply. 4/21/2006 Rev.3.01 www.SiliconStandard.com 4 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS 0.5 140 0.4 120 Shutdown Current (µA) Input Battery Current (µA) 160 VOUT=5V (FB=GND) 100 80 60 40 20 VOUT=3.3V (FB=OUT) 0 0.5 0.1 1.0 1.5 2.0 2.5 3.0 3.5 VOUT=5.0V (FB=GND) 1.2 1.0 0.8 0.6 VOUT=3.3V (FB=OUT) 0.4 0.2 0.01 0.1 1 10 100 CCM/DCM Boundary Output Current (mA) Fig. 2 1.6 1.4 Output Current (mA) Fig. 3 300 200 VOUT=5.0V (FB=GND) 1.0 Fig. 4 Ripple Voltage (mV) 60 VIN=2.4V VIN=3.6V 30 20 VOUT=5.0V (FB=GND) 10 SS6610 (I LIMIT =1A) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 100 Turning Point between CCM & DCM SS6610 (I LIMIT =1A) 160 140 VIN=3.6V 120 100 80 VOUT=5.0V L=22µH CIN=47µF COUT=47µF VIN=2.4V 60 40 VIN=1.2V 20 1000 0 0 50 100 150 Output Current (mA) 200 250 300 350 400 450 500 550 600 650 Output Current (mA) Efficiency vs. Load Current (ref. to Fig.33) 4/21/2006 Rev.3.01 5.5 Input Voltage (V) VIN=1.2V Fig. 5 5.0 VOUT=3.3V (FB=OUT) 0 0.5 180 10 4.5 50 80 1 4.0 Shutdown Current vs. Supply Voltage 100 200 0.1 3.5 150 220 0 0.01 3.0 250 90 40 2.5 L=22µH CIN=100µF COUT=100µF 350 Start-Up Voltage vs. Output Current 50 2.0 400 100 70 1.5 Supply Voltage (V) 1.8 0.0 1.0 Input battery voltage (V) No-Load Battery Current vs. Input Battery Fig. 1 Start-Up Voltage (V) 0.2 0.0 0.0 Efficiency (%) 0.3 Fig. 6 www.SiliconStandard.com Ripple Voltage (ref. to Fig.33) 5 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS 100 240 SS6610 (ILIMIT =1A) 90 200 80 VIN=3.6V 160 Efficiency (%) Ripple Voltage (mV) (Continued) VIN=2.4V 120 VOUT=5.0V L=22µH CIN=100µF COUT=100µF 80 40 VIN=1.2V VIN=3.6V 70 VIN=2.4V 60 50 40 30 VOUT=5.0V (FB=GND) 20 SS6611 (I LIMIT =0.65A) 10 0 0 0 100 200 300 400 500 600 700 800 0.01 0.1 1 Output Current (mA) Fig. 7 10 100 1000 Output Current (mA) Ripple Voltage (ref. to Fig.33) Fig. 8 160 Efficiency vs. Load Current (ref. to Fig.33) 120 SS6611 (I LIMIT =0.65A) 140 SS6611 (I LIMIT =0.65A) VIN=3.6V 120 100 80 VIN=2.4V 60 VIN=3.6V 100 Ripple Voltage (mV) Ripple Voltage (mV) VIN=1.2V VOUT=5.0V L=22µH CIN=47µF COUT=47µF 40 VIN=1.2V 20 80 60 VOUT=5.0V L=22µH CIN=100µF COUT=100µF VIN=2.4V 40 20 VIN=1.2V 0 0 0 50 100 150 200 250 300 350 400 450 500 0 550 100 200 Output Current (mA) Fig. 9 300 400 500 600 Output Current (mA) Ripple Voltage (ref. to Fig.33) Fig. 10 100 Ripple Voltage (ref. to Fig.33) 260 SS6610 (I LIMIT =1A) 240 90 220 VIN=1.2V 70 60 Ripple Voltage (mV) (V) Efficiency (%) 80 VIN=2.4V 50 40 30 VOUT=3.3V (FB=OUT) 20 SS6610 (I LIMIT =1A) 10 200 180 160 140 VIN=2.4V 120 100 60 VIN=1.2V 40 20 0 0 0.01 0.1 1 10 100 1000 0 50 100 Output Current (mA) Fig. 11 VOUT=3.3V L=22µH CIN=47µF COUT=47µF 80 200 250 300 350 400 450 500 550 600 Output Current (mA) Efficiency vs. Load Current (ref. to Fig.32) 4/21/2006 Rev.3.01 150 Fig. 12 www.SiliconStandard.com Ripple Voltage (ref. to Fig.32) 6 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 100 SS6610 (I LIMIT =1A) 140 90 80 Efficiency (%) Ripple Voltage (mV) 120 100 VIN=2.4V VIN=1.2V 80 60 VIN=1.2V 70 50 40 40 VOUT=3.3V 30 VOUT=3.3V (FB=OUT) 20 20 CIN=100µF COUT=100µF SS6611 (I LIMIT =0.65A) SS6610 (ILIMIT =1A) 10 0 0.01 0 0 50 100 150 200 250 300 350 400 450 500 550 1 Output Current (mA) Fig. 13 10 100 1000 Output Current (mA) Ripple Voltage (ref. to Fig.32) Fig. 14 140 Efficiency vs. Load Current (ref. to Fig.32) 120 SS6611 (I LIMIT =0.65A) SS6611 (I LIMIT =0.65A) 110 120 100 Ripple Voltage (mV) Ripple Voltage (mV) VIN=2.4V 60 100 80 VIN=2.4V 60 VOUT=3.3V L=22µH CIN=47µF COUT=47µF 40 VIN=1.2V 20 90 80 70 60 VIN=2.4V 50 VOUT=3.3V L=22µH CIN=100µF COUT=100µF 40 30 20 VIN=1.2V 10 0 0 0 50 100 150 200 250 300 350 400 450 500 0 50 100 150 Output Current (mA) Fig. 15 200 250 300 350 400 450 500 Output Current (mA) Ripple Voltage (ref. to Fig.32) Fig. 16 1.26 Ripple Voltage (ref. to Fig.32) 0.50 0.45 P-Channel 0.40 Resistance (Ω) Reference Voltage (V) 1.25 1.24 1.23 1.22 0.35 0.30 N-Channel 0.25 0.20 0.15 VOUT=3.3V ILX=100mA 0.10 1.21 IREF=0 1.20 -40 -20 0 20 40 60 80 0.05 0.00 -60 -40 -20 Fig. 17 4/21/2006 Rev.3.01 0 20 40 60 80 100 Temperature (°C) Temperature (°C) Reference Voltage vs. Temperature Fig. 18 Switch Resistance vs. Temperature www.SiliconStandard.com 7 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 900 Maximum Output Current (mA) Maximum Output Current (mA) 800 VOUT=3.3V (FB=OUT) 700 600 SS6610 (ILIMIT=1A) 500 400 300 200 SS6611 (ILIMIT=0.65A) 100 0 1.0 1.2 Fig. 19 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 800 600 SS6610 (ILIMIT=1A) 500 400 300 200 SS6611 (I LIMIT=0.65A) 100 0 3.0 Input Voltage (V) Maximum Output Current vs. Input Voltage VOUT=5.0V (FB=GND) 700 1.0 1.5 2.5 3.0 3.5 4.0 4.5 Input Voltage (V) Maximum Output Current vs. Input Voltage Fig. 20 1.2 2.0 160 Switching Frequency fosc (KHz) SS6610 (I LIMIT=1A) 1.0 ILIM (A) 0.8 0.6 SS6611 (ILIMIT=0.65A) 0.4 0.2 0.0 2.0 2.5 Fig. 21 3.0 3.5 4.0 4.5 5.0 Output Voltage (V) Inductor Current vs. Output Voltage 140 120 VOUT=5.0V 100 80 VOUT=3.3V 60 40 IOUT=100mA 20 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Supply Voltage (V) Fig. 22 Switching Frequency vs. Supply Voltage Switching Frequency Fosc (KHz) 220 200 VIN=1.2V VOUT=3.3V 180 160 VIN=2.4V VOUT=3.3V VIN=2.4V VOUT=3.3V 140 120 VIN=2.4V VOUT=5V 100 80 60 40 VIN=3.6V VOUT=5V 20 0 1 10 100 1000 Output Current (mA) Fig. 23 4/21/2006 Rev.3.01 Switching Frequency vs. Output Current Fig. 24 www.SiliconStandard.com LX Switching Waveform 8 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS (Continued) LX Pin Waveform VIN=2.4V Loading: VOUT=3.3V 1mA ↔ 200mA Inductor Current Loading=200mA VIN=2.4V VOUT=3.3V VOUT: AC Couple VOUT AC Couple Fig. 25 VIN Heavy Load Waveform VIN=2.0V~3.0V Fig. 26 Load Transient Response V SHDN VOUT=3.3V, IOUT=100mA VOUT VOUT VOUT=3.3V CIN=COUT=47µF Fig. 27 Line Transient Response Fig. 28 Exiting Shutdown V SHDN V SHDN VOUT VOUT Fig. 29 4/21/2006 Rev.3.01 VOUT=3.3V VOUT=5.0V CIN=COUT=100µF CIN=COUT=47µF Exiting Shutdown www.SiliconStandard.com Fig. 30 Exiting Shutdown 9 of 16 SS6610/11G TYPICAL PERFORMANCE CHARACTERISTICS (Continued) V SHDN VOUT VOUT=5.0V CIN=COUT=100µF Fig. 31 Exiting Shutdown BLOCK DIAGRAM OUT SHDN + Minimum Off-Time OUT C3 47µF C2 0.1µF Q1 One Shot L LX VIN Q2 47µH + F/ F S Q C1 47µF GND R One Shot Max. On-Time + Mirror + LBO + - FB Reference Voltage REF C4 0.1µF LBI 4/21/2006 Rev.3.01 www.SiliconStandard.com 10 of 16 SS6610/11G PIN DESCRIPTIONS PIN 1: FB PIN 2: LBI PIN 3: LBO Connect to pin 8:OUT to get +3.3V output, connect to pin 6:GND to get +5.0V output, or use a resistor network to set the output voltage between +1.8V and +5.5V. Low-battery comparator input. Internally set at +1.23V to trip. Open-drain low-battery comparator output. Output is low when VLBI is <1.23V. LBO is high-impedance during shutdown. PIN 4: REF 1.23V reference voltage. Bypass with a 0.1µF capacitor. PIN 5: SHDN Shutdown input. High = operating, low = shutdown. PIN 6: GND Ground PIN 7: LX N-channel and P-channel power MOSFET drain. PIN 8: OUT Power output. OUT provides the bootstrap power to the IC. APPLICATION INFORMATION Overview current. The peak current of the internal N-MOSFET The SS6610/11 series are high-efficiency, step-up DC/DC power switch can be fixed at 1.0A (SS6610) or converters, featuring a built-in synchronous 0.65A (SS6611). The switch frequency depends on rectifier, which reduces size and cost by eliminating either loading conditions or input voltage, and can the need for an external Schottky diode. The start-up range up to 500KHz. It is governed by a pair of one- voltage of the SS6610 and SS6611 is as low as 0.8V and they operate with an input voltage down to 0.7V. Quiescent supply current is only 20µA. The internal P-MOSFET on-resistance is typically shots that set a minimum off-time (1µs ) and a maximum on-time (4µs). Synchronous Rectification 0.3Ω to improve overall efficiency by minimizing AC Using the internal synchronous rectifier eliminates losses. The output voltage can be easily set using the need for an external Schottky diode, reducing two external resistors for 1.8V to 5.5V; connecting the cost and board space. During the cycle of off- FB to OUT to get 3.3V; or connecting to GND to get time, the P-MOSFET turns on and shuts the N- 5.0V. The peak current of the internal switch is fixed MOSFET off. Due to the low turn-on resistance at 1.0A (SS6610) or 0.65A (SS6611) for design of the MOSFET, the synchronous rectifier signif- flexibility. The current limits of the SS6610 and SS6611 cantly improves efficiency without an additional ex- are 1.0A and 0.65A respectively. The lower current ternal Schottky diode. Thus, the conversion effi- limit allows the use of a physically smaller inductor in ciency can be as high as 93%. space-sensitive applications. Reference Voltage PFM Control Scheme The reference voltage (REF) is nominally 1.23V for A key feature of the SS6610 series is a unique excellent T.C. performance. In addition, the REF pin can minimum-off-time, constant-on-time, current-limited, source up to 100µA to an external circuit with good load pulse-frequency-modulation (PFM) control scheme regulation (<10mV). A bypass capacitor of 0.1µF is (see BLOCK DIAGRAM) with ultra-low quiescent required for proper operation and good performance. 4/21/2006 Rev.3.01 www.SiliconStandard.com 11 of 16 SS6610/11G Shutdown The whole circuit is shutdown when V SHDN is low. In shutdown mode, the current can flow from the battery to the output due to the body diode of the P-MOSFET. VOUTfalls to approximately (Vin - 0.6V) and LX remains high impedance. The capacitance and load at OUT determine the rate at which VOUT decays. Shutdown ……………………………………………………(2) where IOUT(MAX)=maximum output current in amps VIN=input voltage L=inductor value in µH η =efficiency (typically 0.9) can be pulled as high as 6V. Regardless of the volt- tOFF=LX switch’ off-time in µs age at OUT. ILIM=1.0A or 0.65A 2. Capacitor Selection Selecting the Output Voltage The output ripple voltage is related to the peak VOUT can be simply set to 3.3V/5.0V by connecting the FB pin to OUT/GND due to the use of an internal resistor divider in the IC (Fig.32 and Fig.33). In order to adjust output voltage, a resistor divider is connected to VOUT, FB, GND (Fig.34). Vout can be calculated by the following equation: inductor current and the output capacitor ESR. Besides output ripple voltage, the output ripple current may also be of concern. A filter capacitor with low ESR is helpful to the efficiency and the steady state output current of the SS6610 series. Therefore a NIPPON MCM Series tantalum R5=R6 [(VOUT / VREF )-1] .....................................(1) capacitor of 100µF/6V is recommended. A smaller where V REF =1.23V and VOUT ranges from 1.8V to capacitor (down to 47μF with higher ESR) is ac- 5.5V. The recommended R6 is 240kΩ. ceptable for light loads or in applications that can tolerate higher output ripple. Low-Battery Detection The SS6610 series contains an on-chip comparator with 50mV internal hysteresis (REF, REF+50mV) for low 3. PCB Layout and Grounding Since the SS6610/11’s switching frequency can battery detection. If the voltage at LBI falls below the range up to 500kHz, the SS6610/11 can be very internal reference voltage, LBO ( an open-drain out- sensitive. Careful printed circuit layout is im- put) sinks current to GND. portant for minimizing ground bounce and noise. The OUT pin should be as clear as possible, Component Selection and the GND pin should be placed close to the 1. Inductor Selection ground plane. Keep the IC’s GND pin and the An inductor value of 22µH performs well in most ground leads of the input and output filter capaci- applications. The SS6610 series also work with tors less than 0.2in (5mm) apart. In addition, inductors in the 10µH to 47µH range. An inductor keep all connections to the FB and LX pins as with higher peak inductor current creates a higher short as possible. In particular, when using ex- output voltage ripple (IPEAK X output filter capaci- ternal feedback resistors, locate them as close tor ESR). The inductor’s DC resistance signifi- to the FB pin as possible. To maximize output power cantly affects efficiency. We can calculate the and efficiency, and minimize output ripple voltage, maximum output current as follows: use a ground plane and solder the IC’s GND directly to the ground plane. Fig. 35 to 37 are the IOUT(MAX ) 4/21/2006 Rev.3.01 VIN VOUT − VIN η = ILIM − t OFF VOUT 2×L recommended layout diagrams. www.SiliconStandard.com 12 of 16 SS6610/11G Ripple Voltage Reduction results in a stable output voltage. Fig.38 shows Two or three parallel output capacitors can sig- the application circuit with the above features. nificantly improve the output ripple voltage of the Figures 39 to 46 show the performance of the SS6610/11. The addition of an extra input capacitor circuit in Figure 38. APPLICATION EXAMPLES VIN VIN C1 47µF L 22µH L 22µH OUT LX R1 LX VOUT C2 0.1µF LBI C1 47µF R1 C3 47µF 0.1µF 0.1µF LBO C4 GND FB C3 47µF SHDN R2 R4 100KΩ REF C2 0.1µF LBI SHDN R2 VOUT OUT LBO C4 LOW BATTERY OUTPUT GND SS6610/11 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER Fig. 32. VOUT = 3.3V Application Circuit. R4 100KΩ REF FB LOW BATTERY OUTPUT SS6610/11 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER Fig. 33. VOUT = 5.0V Application Circuit. VIN L 22µH C1 47µF VOUT LX OUT R1 C2 0.1µF LBI SHDN R2 100KΩ R4 REF 0.1µF C4 C3 47µF R5 LBO GND SS6610/11 FB LOW BATTERY OUTPUT R6 L: TDK SLF7045T-22OMR90 C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER VOUT=VREF*(1+R5/R6) Fig. 34 An Adjustable Output Application Circuit 4/21/2006 Rev.3.01 www.SiliconStandard.com 13 of 16 SS6610/11G IIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII Fig. 35. Top layer Fig. 36. Bottom layer L1 VIN VIN + + C1 100µF C2 100µF Fig. 37. Placement 22µH C3 0.1µF R1 R3 R4 R5 100K VOUT + + + C7 0.1µF 100µF 100µF C5 8 OUT LX 7 6 GND 5 SHDN 1 FB 2 LBI R2 R6 3 LBO 4 REF LBI SS6610/11 LBO C4 100nF R5=0Ω, R6=open; for VOUT=3.3V R5=open, R6=0Ω; for VOUT=5.0V VOUT=1.23(1+R5/R6); for adjustable output voltage C6 + C8 100µF R7 10k ShutDown L1: TDK SLF7045T-22OMR90 C1~C2, C6~8: NIPPON Tantalum Capacitor 6MCM107MCTER Fig. 38 SS6610/11 application circuit with small ripple voltage. 100 95 60 SS6610 (I LIMIT =1A) VIN=3.6V 90 50 Ripple Voltage (mV) 85 Efficiency (%) 80 VIN=2.4V 75 70 65 60 SS6610 (ILIMIT =1A) 55 50 30 20 VIN=2.4V VIN=1.2V L=22µH L=22µH 0 0.1 1 10 100 1000 0 100 Output Current (mA) Fig. 39 4/21/2006 Rev.3.01 VOUT=5.0V VIN=1.2V 10 35 30 0.01 40 VOUT=5.0V 45 40 VIN=3.6V 200 300 400 500 600 700 Output Current (mA) Efficiency (ref. to Fig.38) Fig. 40 www.SiliconStandard.com Ripple Voltage (ref. to Fig.38) 14 of 16 SS6610/11G 60 95 90 60 SS6611 (I LIMIT =0.65A) VIN=3.6V 50 Ripple Voltage (mV) 85 Efficiency (%) 80 75 70 VIN=2.4V 65 60 55 SS6611 (I LIMIT =0.65A) 50 45 40 VIN=3.6V 40 30 20 VIN=2.4V VOUT=5.0V VIN=1.2V 10 35 VIN=1.2V L=22µH 30 25 0.01 0.1 1 Fig. 41 10 100 1000 0 100 200 Efficiency (ref. to Fig.38) Fig. 42 400 500 Ripple Voltage (ref. to Fig.38) 50 VIN=2.4V 40 Ripple Voltage (mV) 85 80 75 70 VIN=1.2V 65 60 55 SS6610 (I LIMIT =1A) 50 VOUT=3.3V 35 30 25 VIN=2.4V 20 15 10 L=22µH 45 40 0.01 SS6610 (ILIMIT =1A) 45 90 VOUT=3.3V VIN=1.2V L=22µH 5 0 0.1 1 10 100 0 1000 50 100 150 Output Current (mA) Fig. 43 200 250 Efficiency (ref. to Fig.38) Fig. 44 500 550 600 SS6611 (I LIMIT =0.65A) Ripple Voltage (mV) 80 VIN=2.4V 75 70 65 SS6611 (I LIMIT =0.65A) 55 25 20 VIN=2.4V 15 10 VOUT=3.3V VIN=1.2V VOUT=3.3V VIN=1.2V 5 L=22µH 45 L=22µH 0 0.1 1 10 100 1000 0 50 100 Output Current (mA) Fig. 45 4/21/2006 Rev.3.01 450 30 85 40 0.01 400 35 90 50 350 Ripple Voltage (ref. to Fig.38) 95 60 300 Output Current (mA) 100 Efficiency (%) 300 Output Current (mA) 100 Efficiency (%) L=22µH 0 Output Current (mA) 95 VOUT=5.0V 150 200 250 300 350 400 Output Current (mA) Efficiency (ref. to Fig.38) Fig. 46 www.SiliconStandard.com Ripple Voltage (ref. to Fig.38) 15 of 16 SS6610/11G PHYSICAL DIMENSIONS 8 LEAD MSOP D SYMBOL MIN MAX A1 -- 0.20 A2 0.76 0.97 b 0.28 0.38 C 0.13 0.23 D 2.90 3.10 E 4.80 5.00 E1 2.90 3.10 E E1 e A2 e C 0.40 0.66 A1 L 0.65 L b All dimensions in millimeters. Dimensions do not include mold protrusions. PART MARKING SS6610G = 1610PO, SS6611G = 1611PO 1610PO SSSYM Date/lot code: SSS = lot code sequence Y = year (C=2005, I=2006, D=2007...) M = month (1-9,A,B,C) PACKING: Moisture sensitivity level MSL3 3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB). Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. 4/21/2006 Rev.3.01 www.SiliconStandard.com 16 of 16