SSC SS6611GOTR

SS6610/11G
High-efficiency Synchronous Step-up DC/DC Converter
PRODUCT SUMMARY
DESCRIPTION
High efficiency boost converter
Output current up to 500mA
No external diode required
The SS6610/11G are high-efficiency step-up
DC/DC converters, with a start-up voltage as low
as 0.8V, and an operating voltage down to 0.7V.
Consuming only 20µA of quiescent current,
FEATURES
these devices include a built-in synchronous rec-
Quiescent supply current of 20mA.
tifier that reduces size and cost by eliminating
Power-saving shutdown mode (0.1µA typical).
the need for an external Schottky diode, and
Internal synchronous rectifier
improves overall efficiency by minimizing
On-chip low-battery detector.
losses.
Low battery hysteresis
The switching frequency can range up to
Pb-free, RoHS compliant MSOP-8
500KHz depending on the load and input voltage. The output voltage can be easily set by:
APPLICATIONS
1) two external resistors for 1.8V to 5.5V;
Palmtop and notebook computers.
2) connecting FB to OUT to get 3.3V; or
PDAs
3) connecting FB to GND to get 5.0V.
Wireless phones
The peak current of the internal switch is fixed at 1A
Pocket organizers.
(SS6610G) or 0.65A (SS6611G) for design flexibility.
Digital cameras.
Hand-held devices with 1 to 3 cells of
NiMH/NiCd batteries.
TYPICAL APPLICATION CIRCUIT
VIN
ON
+
47µF
OFF
22µH
LX
SHDN
SS6610G
SS6611G
Low Battery
Detection
LBI
REF
OUT
Output 3.3V, 5.0V
or adjustable from 1.8V to 5.5V
+
47µF up to 300mA output
LBO
GND
FB
Low-battery
Detect Out
0.1µF
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SS6610/11G
ORDERING INFORMATION
PIN CONFIGURATION
SS6610GO TR
SS6611GO TR
MSOP-8
TOP VIEW
Packing
TR: Tape and reel
Package type
GO: RoHS-compliant MSOP-8
FB 1
8
OUT
LX
LBI 2
7
LBO 3
6
GND
REF 4
5
SHDN
Example: SS6610GO TR
SS6610 in RoHS-compliant MSOP-8 package, shipped on tape and reel
ABSOLUTE MAXIMUM RATINGS
Supply voltage (OUT to GND)
8.0V
Switch voltage (LX to GND)
VOUT+ 0.3V
SHDN , LBO to GND
6.0V
LBI, REF, FB, to GND
VOUT+0.3V
Switch current (LX)
-1.5A to +1.5A
Output current (OUT)
-1.5A to +1.5A
Operating temperature range
-40°C ~ +85°C
Storage temperature range
-65°C ~150°C
TEST CIRCUIT
Refer to the typical application circuit on page 1.
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SS6610/11G
ELECTRICAL CHARACTERISTICS
(VIN = 2.0V, VOUT = 3.3V (FB = VOUT),RL =
PARAMETER
∞ , unless otherwise specified.)
TEST CONDITIONS
MIN.
Minimum input voltage
MAX.
0.7
Operating voltage
Start-up voltage
TYP.
1.1
RL=3kΩ (Note1)
0.8
Start-up voltage temp. coeff.
V
5.5
V
1.1
V
-2
Output voltage range
VIN<VOUT
1.8
Output voltage
FB = VOUT
3.17
3.3
UNIT
mV/°C
5.5
FB=OUT
SS6610G
300
350
Steady-state output current
(VOUT =3.3V)
SS6611G
150
300
(Note 2)
FB=GND
SS6610G
180
230
SS6611G
90
160
1.199
1.23
3.43
V
mA
(VOUT
Reference voltage
=5.0V)
IREF= 0
Reference voltage temp. coeff.
1.261
0.024
V
mV/°C
Reference load regulation
IREF = 0 to 100µA
10
30
mV
Reference line regulation
VOUT = 1.8V to 5.5V
5
10
mV/V
1.23
1.261
V
0.3
0.6
Ω
FB , LBI input threshold
Internal switch on-resistance
1.199
ILX = 100mA
SS6610G
0.80
1.0
1.25
SS6611G
0.50
0.65
0.85
0.05
1
µA
VFB = 1.4V , VOUT = 3.3V
20
35
µA
SHDN = GND
0.1
1
µA
VOUT= 3.3V ,ILOAD = 200mA
90
VOUT = 2V ,ILOAD = 1mA
85
LX switch current limit
LX leakage current
A
VLX=0V~4V; VOUT=5.5V
Operating current into OUT
(Note 3)
Shutdown current into OUT
Efficiency
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%
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SS6610/11G
ELECTRICAL CHARACTERISTICS (Continued)
PARAMETER
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
LX switch on-time
VFB =1V , VOUT = 3.3V
2
4
7
µs
LX switch off-time
VFB =1V , VOUT = 3.3V
0.6
0.9
1.4
µs
FB input current
VFB = 1.4V
0.03
50
nA
LBI input current
VLBI = 1.4V
1
50
nA
SHDN input current
V
0.07
50
nA
LBO low output voltage
VLBI = 0, ISINK = 1mA
0.2
0.4
µA
LBO off leakage current
V
0.07
1
µΑ
SHDN
LBO
= 0 or VOUT
= 5.5V, VLBI = 5.5V
LBI hystereisis
50
VIL
mV
0.2VOUT
V
SHDN input voltage
VIH
0.8VOUT
Note 1: Start-up voltage operation is guaranteed without the addition of an external Schottky diode between the
input and output.
Note 2: Steady-state output current indicates that the device maintains output voltage regulation under load.
Note 3: Device is bootstrapped (power to the IC comes from OUT). This correlates directly with the actual
battery supply.
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS
0.5
140
0.4
120
Shutdown Current (µA)
Input Battery Current (µA)
160
VOUT=5V (FB=GND)
100
80
60
40
20
VOUT=3.3V (FB=OUT)
0
0.5
0.1
1.0
1.5
2.0
2.5
3.0
3.5
VOUT=5.0V (FB=GND)
1.2
1.0
0.8
0.6
VOUT=3.3V (FB=OUT)
0.4
0.2
0.01
0.1
1
10
100
CCM/DCM Boundary Output Current (mA)
Fig. 2
1.6
1.4
Output Current (mA)
Fig. 3
300
200
VOUT=5.0V (FB=GND)
1.0
Fig. 4
Ripple Voltage (mV)
60
VIN=2.4V
VIN=3.6V
30
20
VOUT=5.0V (FB=GND)
10
SS6610 (I LIMIT =1A)
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
100
Turning Point between CCM & DCM
SS6610 (I LIMIT =1A)
160
140
VIN=3.6V
120
100
80
VOUT=5.0V
L=22µH
CIN=47µF
COUT=47µF
VIN=2.4V
60
40
VIN=1.2V
20
1000
0
0
50
100
150
Output Current (mA)
200
250
300
350
400
450
500
550
600
650
Output Current (mA)
Efficiency vs. Load Current (ref. to Fig.33)
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5.5
Input Voltage (V)
VIN=1.2V
Fig. 5
5.0
VOUT=3.3V (FB=OUT)
0
0.5
180
10
4.5
50
80
1
4.0
Shutdown Current vs. Supply Voltage
100
200
0.1
3.5
150
220
0
0.01
3.0
250
90
40
2.5
L=22µH
CIN=100µF
COUT=100µF
350
Start-Up Voltage vs. Output Current
50
2.0
400
100
70
1.5
Supply Voltage (V)
1.8
0.0
1.0
Input battery voltage (V)
No-Load Battery Current vs. Input Battery
Fig. 1
Start-Up Voltage (V)
0.2
0.0
0.0
Efficiency (%)
0.3
Fig. 6
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Ripple Voltage (ref. to Fig.33)
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS
100
240
SS6610 (ILIMIT =1A)
90
200
80
VIN=3.6V
160
Efficiency (%)
Ripple Voltage (mV)
(Continued)
VIN=2.4V
120
VOUT=5.0V
L=22µH
CIN=100µF
COUT=100µF
80
40
VIN=1.2V
VIN=3.6V
70
VIN=2.4V
60
50
40
30
VOUT=5.0V (FB=GND)
20
SS6611 (I LIMIT =0.65A)
10
0
0
0
100
200
300
400
500
600
700
800
0.01
0.1
1
Output Current (mA)
Fig. 7
10
100
1000
Output Current (mA)
Ripple Voltage (ref. to Fig.33)
Fig. 8
160
Efficiency vs. Load Current (ref. to Fig.33)
120
SS6611 (I LIMIT =0.65A)
140
SS6611 (I LIMIT =0.65A)
VIN=3.6V
120
100
80
VIN=2.4V
60
VIN=3.6V
100
Ripple Voltage (mV)
Ripple Voltage (mV)
VIN=1.2V
VOUT=5.0V
L=22µH
CIN=47µF
COUT=47µF
40
VIN=1.2V
20
80
60
VOUT=5.0V
L=22µH
CIN=100µF
COUT=100µF
VIN=2.4V
40
20
VIN=1.2V
0
0
0
50
100
150
200
250
300
350
400
450
500
0
550
100
200
Output Current (mA)
Fig. 9
300
400
500
600
Output Current (mA)
Ripple Voltage (ref. to Fig.33)
Fig. 10
100
Ripple Voltage (ref. to Fig.33)
260
SS6610 (I LIMIT =1A)
240
90
220
VIN=1.2V
70
60
Ripple Voltage (mV)
(V) Efficiency (%)
80
VIN=2.4V
50
40
30
VOUT=3.3V (FB=OUT)
20
SS6610 (I LIMIT =1A)
10
200
180
160
140
VIN=2.4V
120
100
60
VIN=1.2V
40
20
0
0
0.01
0.1
1
10
100
1000
0
50
100
Output Current (mA)
Fig. 11
VOUT=3.3V
L=22µH
CIN=47µF
COUT=47µF
80
200
250
300
350
400
450
500
550
600
Output Current (mA)
Efficiency vs. Load Current (ref. to Fig.32)
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150
Fig. 12
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Ripple Voltage (ref. to Fig.32)
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
100
SS6610 (I LIMIT =1A)
140
90
80
Efficiency (%)
Ripple Voltage (mV)
120
100
VIN=2.4V
VIN=1.2V
80
60
VIN=1.2V
70
50
40
40
VOUT=3.3V
30
VOUT=3.3V (FB=OUT)
20
20
CIN=100µF
COUT=100µF
SS6611 (I LIMIT =0.65A)
SS6610 (ILIMIT =1A)
10
0
0.01
0
0
50
100
150
200
250
300
350
400
450
500
550
1
Output Current (mA)
Fig. 13
10
100
1000
Output Current (mA)
Ripple Voltage (ref. to Fig.32)
Fig. 14
140
Efficiency vs. Load Current (ref. to Fig.32)
120
SS6611 (I LIMIT =0.65A)
SS6611 (I LIMIT =0.65A)
110
120
100
Ripple Voltage (mV)
Ripple Voltage (mV)
VIN=2.4V
60
100
80
VIN=2.4V
60
VOUT=3.3V
L=22µH
CIN=47µF
COUT=47µF
40
VIN=1.2V
20
90
80
70
60
VIN=2.4V
50
VOUT=3.3V
L=22µH
CIN=100µF
COUT=100µF
40
30
20
VIN=1.2V
10
0
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
Output Current (mA)
Fig. 15
200
250
300
350
400
450
500
Output Current (mA)
Ripple Voltage (ref. to Fig.32)
Fig. 16
1.26
Ripple Voltage (ref. to Fig.32)
0.50
0.45
P-Channel
0.40
Resistance (Ω)
Reference Voltage (V)
1.25
1.24
1.23
1.22
0.35
0.30
N-Channel
0.25
0.20
0.15
VOUT=3.3V
ILX=100mA
0.10
1.21
IREF=0
1.20
-40
-20
0
20
40
60
80
0.05
0.00
-60
-40
-20
Fig. 17
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0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Reference Voltage vs. Temperature
Fig. 18
Switch Resistance vs. Temperature
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
900
Maximum Output Current (mA)
Maximum Output Current (mA)
800
VOUT=3.3V (FB=OUT)
700
600
SS6610 (ILIMIT=1A)
500
400
300
200
SS6611 (ILIMIT=0.65A)
100
0
1.0
1.2
Fig. 19
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
800
600
SS6610 (ILIMIT=1A)
500
400
300
200
SS6611 (I LIMIT=0.65A)
100
0
3.0
Input Voltage (V)
Maximum Output Current vs. Input Voltage
VOUT=5.0V (FB=GND)
700
1.0
1.5
2.5
3.0
3.5
4.0
4.5
Input Voltage (V)
Maximum Output Current vs. Input Voltage
Fig. 20
1.2
2.0
160
Switching Frequency fosc (KHz)
SS6610 (I LIMIT=1A)
1.0
ILIM (A)
0.8
0.6
SS6611 (ILIMIT=0.65A)
0.4
0.2
0.0
2.0
2.5
Fig. 21
3.0
3.5
4.0
4.5
5.0
Output Voltage (V)
Inductor Current vs. Output Voltage
140
120
VOUT=5.0V
100
80
VOUT=3.3V
60
40
IOUT=100mA
20
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Supply Voltage (V)
Fig. 22
Switching Frequency vs. Supply Voltage
Switching Frequency Fosc (KHz)
220
200
VIN=1.2V
VOUT=3.3V
180
160
VIN=2.4V
VOUT=3.3V
VIN=2.4V
VOUT=3.3V
140
120
VIN=2.4V
VOUT=5V
100
80
60
40
VIN=3.6V
VOUT=5V
20
0
1
10
100
1000
Output Current (mA)
Fig. 23
4/21/2006 Rev.3.01
Switching Frequency vs. Output Current
Fig. 24
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LX Switching Waveform
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
LX Pin Waveform
VIN=2.4V
Loading:
VOUT=3.3V
1mA ↔ 200mA
Inductor Current
Loading=200mA
VIN=2.4V
VOUT=3.3V
VOUT: AC Couple
VOUT AC Couple
Fig. 25
VIN
Heavy Load Waveform
VIN=2.0V~3.0V
Fig. 26
Load Transient Response
V SHDN
VOUT=3.3V, IOUT=100mA
VOUT
VOUT
VOUT=3.3V
CIN=COUT=47µF
Fig. 27
Line Transient Response
Fig. 28 Exiting Shutdown
V SHDN
V SHDN
VOUT
VOUT
Fig. 29
4/21/2006 Rev.3.01
VOUT=3.3V
VOUT=5.0V
CIN=COUT=100µF
CIN=COUT=47µF
Exiting Shutdown
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Fig. 30
Exiting Shutdown
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SS6610/11G
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
V SHDN
VOUT
VOUT=5.0V
CIN=COUT=100µF
Fig. 31
Exiting Shutdown
BLOCK DIAGRAM
OUT
SHDN
+
Minimum
Off-Time
OUT
C3
47µF
C2
0.1µF
Q1
One Shot
L
LX
VIN
Q2
47µH
+
F/ F
S Q
C1
47µF
GND
R
One Shot
Max. On-Time
+
Mirror
+
LBO
+
-
FB
Reference
Voltage
REF
C4
0.1µF
LBI
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SS6610/11G
PIN DESCRIPTIONS
PIN 1: FB
PIN 2: LBI
PIN 3: LBO
Connect to pin 8:OUT to get +3.3V
output, connect to pin 6:GND to get
+5.0V output, or use a resistor
network to set the output voltage
between +1.8V and +5.5V.
Low-battery comparator input.
Internally set at +1.23V to trip.
Open-drain low-battery comparator
output. Output is low when VLBI is
<1.23V. LBO is high-impedance
during shutdown.
PIN 4: REF
1.23V reference voltage. Bypass
with a 0.1µF capacitor.
PIN 5: SHDN Shutdown input. High = operating,
low = shutdown.
PIN 6: GND Ground
PIN 7: LX
N-channel and P-channel power
MOSFET drain.
PIN 8: OUT
Power output. OUT provides the
bootstrap power to the IC.
APPLICATION INFORMATION
Overview
current. The peak current of the internal N-MOSFET
The SS6610/11 series are high-efficiency, step-up DC/DC
power switch can be fixed at 1.0A (SS6610) or
converters, featuring a built-in synchronous
0.65A (SS6611). The switch frequency depends on
rectifier, which reduces size and cost by eliminating
either loading conditions or input voltage, and can
the need for an external Schottky diode. The start-up
range up to 500KHz. It is governed by a pair of one-
voltage of the SS6610 and SS6611 is as low as
0.8V and they operate with an input voltage down
to 0.7V. Quiescent supply current is only 20µA.
The internal P-MOSFET on-resistance is typically
shots that set a minimum off-time (1µs ) and a
maximum on-time (4µs).
Synchronous Rectification
0.3Ω to improve overall efficiency by minimizing AC
Using the internal synchronous rectifier eliminates
losses. The output voltage can be easily set using
the need for an external Schottky diode, reducing
two external resistors for 1.8V to 5.5V; connecting
the cost and board space. During the cycle of off-
FB to OUT to get 3.3V; or connecting to GND to get
time, the P-MOSFET turns on and shuts the N-
5.0V. The peak current of the internal switch is fixed
MOSFET off. Due to the low turn-on resistance
at 1.0A (SS6610) or 0.65A (SS6611) for design
of the MOSFET, the synchronous rectifier signif-
flexibility. The current limits of the SS6610 and SS6611
cantly improves efficiency without an additional ex-
are 1.0A and 0.65A respectively. The lower current
ternal Schottky diode. Thus, the conversion effi-
limit allows the use of a physically smaller inductor in
ciency can be as high as 93%.
space-sensitive applications.
Reference Voltage
PFM Control Scheme
The reference voltage (REF) is nominally 1.23V for
A key feature of the SS6610 series is a unique
excellent T.C. performance. In addition, the REF pin can
minimum-off-time, constant-on-time, current-limited,
source up to 100µA to an external circuit with good load
pulse-frequency-modulation (PFM) control scheme
regulation (<10mV). A bypass capacitor of 0.1µF is
(see BLOCK DIAGRAM) with ultra-low quiescent
required for proper operation and good performance.
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SS6610/11G
Shutdown
The whole circuit is shutdown when V SHDN is low. In
shutdown mode, the current can flow from the battery
to the output due to the body diode of the P-MOSFET.
VOUTfalls to approximately (Vin - 0.6V) and LX remains
high impedance. The capacitance and load at OUT determine the rate at which VOUT decays. Shutdown
……………………………………………………(2)
where IOUT(MAX)=maximum output current in
amps
VIN=input voltage
L=inductor value in µH
η =efficiency (typically 0.9)
can be pulled as high as 6V. Regardless of the volt-
tOFF=LX switch’ off-time in µs
age at OUT.
ILIM=1.0A or 0.65A
2. Capacitor Selection
Selecting the Output Voltage
The output ripple voltage is related to the peak
VOUT can be simply set to 3.3V/5.0V by connecting the
FB pin to OUT/GND due to the use of an internal resistor divider in the IC (Fig.32 and Fig.33). In order to
adjust output voltage, a resistor divider is connected
to VOUT, FB, GND (Fig.34). Vout can be calculated
by the following equation:
inductor current and the output capacitor ESR.
Besides output ripple voltage, the output ripple
current may also be of concern. A filter capacitor
with low ESR is helpful to the efficiency and the
steady state output current of the SS6610 series.
Therefore a NIPPON MCM Series tantalum
R5=R6 [(VOUT / VREF )-1] .....................................(1)
capacitor of 100µF/6V is recommended. A smaller
where V REF =1.23V and VOUT ranges from 1.8V to
capacitor (down to 47μF with higher ESR) is ac-
5.5V. The recommended R6 is 240kΩ.
ceptable for light loads or in applications that can
tolerate higher output ripple.
Low-Battery Detection
The SS6610 series contains an on-chip comparator with
50mV internal hysteresis (REF, REF+50mV) for low
3. PCB Layout and Grounding
Since the SS6610/11’s switching frequency can
battery detection. If the voltage at LBI falls below the
range up to 500kHz, the SS6610/11 can be very
internal reference voltage, LBO ( an open-drain out-
sensitive. Careful printed circuit layout is im-
put) sinks current to GND.
portant for minimizing ground bounce and noise.
The OUT pin should be as clear as possible,
Component Selection
and the GND pin should be placed close to the
1. Inductor Selection
ground plane. Keep the IC’s GND pin and the
An inductor value of 22µH performs well in most
ground leads of the input and output filter capaci-
applications. The SS6610 series also work with
tors less than 0.2in (5mm) apart. In addition,
inductors in the 10µH to 47µH range. An inductor
keep all connections to the FB and LX pins as
with higher peak inductor current creates a higher
short as possible. In particular, when using ex-
output voltage ripple (IPEAK X output filter capaci-
ternal feedback resistors, locate them as close
tor ESR). The inductor’s DC resistance signifi-
to the FB pin as possible. To maximize output power
cantly affects efficiency. We can calculate the
and efficiency, and minimize output ripple voltage,
maximum output current as follows:
use a ground plane and solder the IC’s GND directly to the ground plane. Fig. 35 to 37 are the
IOUT(MAX )
4/21/2006 Rev.3.01
VIN 
 VOUT − VIN 
 η
=
ILIM − t OFF 
VOUT 
2×L


recommended layout diagrams.
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12 of 16
SS6610/11G
Ripple Voltage Reduction
results in a stable output voltage. Fig.38 shows
Two or three parallel output capacitors can sig-
the application circuit with the above features.
nificantly improve the output ripple voltage of the
Figures 39 to 46 show the performance of the
SS6610/11. The addition of an extra input capacitor
circuit in Figure 38.
APPLICATION EXAMPLES
VIN
VIN
C1
47µF
L
22µH
L
22µH
OUT
LX
R1
LX
VOUT
C2
0.1µF
LBI
C1
47µF
R1
C3
47µF
0.1µF
0.1µF
LBO
C4
GND
FB
C3
47µF
SHDN
R2
R4
100KΩ
REF
C2
0.1µF
LBI
SHDN
R2
VOUT
OUT
LBO
C4
LOW BATTERY
OUTPUT
GND
SS6610/11
L: TDK SLF7045T-22OMR90
C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
Fig. 32. VOUT = 3.3V Application Circuit.
R4
100KΩ
REF
FB
LOW BATTERY
OUTPUT
SS6610/11
L: TDK SLF7045T-22OMR90
C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
Fig. 33. VOUT = 5.0V Application Circuit.
VIN
L
22µH
C1
47µF
VOUT
LX
OUT
R1
C2
0.1µF
LBI
SHDN
R2
100KΩ
R4
REF
0.1µF
C4
C3
47µF
R5
LBO
GND
SS6610/11
FB
LOW BATTERY
OUTPUT
R6
L: TDK SLF7045T-22OMR90
C1, C3: NIPPON Tantalum Capacitor 6MCM476MB2TER
VOUT=VREF*(1+R5/R6)
Fig. 34 An Adjustable Output Application Circuit
4/21/2006 Rev.3.01
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13 of 16
SS6610/11G
IIIII
IIIIIIIIIIIIIIIIIIIIII
IIIIIIIIIIIIIII
Fig. 35. Top layer
Fig. 36. Bottom layer
L1
VIN
VIN
+
+
C1
100µF
C2
100µF
Fig. 37. Placement
22µH
C3
0.1µF
R1 R3 R4
R5
100K
VOUT
+
+
+
C7
0.1µF 100µF 100µF
C5
8
OUT
LX 7
6
GND
5
SHDN
1 FB
2 LBI
R2
R6
3 LBO
4
REF
LBI
SS6610/11
LBO
C4
100nF
R5=0Ω, R6=open; for VOUT=3.3V
R5=open, R6=0Ω; for VOUT=5.0V
VOUT=1.23(1+R5/R6); for adjustable output voltage
C6
+
C8
100µF
R7
10k
ShutDown
L1: TDK SLF7045T-22OMR90
C1~C2, C6~8: NIPPON Tantalum Capacitor 6MCM107MCTER
Fig. 38 SS6610/11 application circuit with small ripple voltage.
100
95
60
SS6610 (I LIMIT =1A)
VIN=3.6V
90
50
Ripple Voltage (mV)
85
Efficiency (%)
80
VIN=2.4V
75
70
65
60
SS6610 (ILIMIT =1A)
55
50
30
20
VIN=2.4V
VIN=1.2V
L=22µH
L=22µH
0
0.1
1
10
100
1000
0
100
Output Current (mA)
Fig. 39
4/21/2006 Rev.3.01
VOUT=5.0V
VIN=1.2V
10
35
30
0.01
40
VOUT=5.0V
45
40
VIN=3.6V
200
300
400
500
600
700
Output Current (mA)
Efficiency (ref. to Fig.38)
Fig. 40
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Ripple Voltage (ref. to Fig.38)
14 of 16
SS6610/11G
60
95
90
60
SS6611 (I LIMIT =0.65A)
VIN=3.6V
50
Ripple Voltage (mV)
85
Efficiency (%)
80
75
70
VIN=2.4V
65
60
55
SS6611 (I LIMIT =0.65A)
50
45
40
VIN=3.6V
40
30
20
VIN=2.4V
VOUT=5.0V
VIN=1.2V
10
35
VIN=1.2V
L=22µH
30
25
0.01
0.1
1
Fig. 41
10
100
1000
0
100
200
Efficiency (ref. to Fig.38)
Fig. 42
400
500
Ripple Voltage (ref. to Fig.38)
50
VIN=2.4V
40
Ripple Voltage (mV)
85
80
75
70
VIN=1.2V
65
60
55
SS6610 (I LIMIT =1A)
50
VOUT=3.3V
35
30
25
VIN=2.4V
20
15
10
L=22µH
45
40
0.01
SS6610 (ILIMIT =1A)
45
90
VOUT=3.3V
VIN=1.2V
L=22µH
5
0
0.1
1
10
100
0
1000
50
100
150
Output Current (mA)
Fig. 43
200
250
Efficiency (ref. to Fig.38)
Fig. 44
500
550
600
SS6611 (I LIMIT =0.65A)
Ripple Voltage (mV)
80
VIN=2.4V
75
70
65
SS6611 (I LIMIT =0.65A)
55
25
20
VIN=2.4V
15
10
VOUT=3.3V
VIN=1.2V
VOUT=3.3V
VIN=1.2V
5
L=22µH
45
L=22µH
0
0.1
1
10
100
1000
0
50
100
Output Current (mA)
Fig. 45
4/21/2006 Rev.3.01
450
30
85
40
0.01
400
35
90
50
350
Ripple Voltage (ref. to Fig.38)
95
60
300
Output Current (mA)
100
Efficiency (%)
300
Output Current (mA)
100
Efficiency (%)
L=22µH
0
Output Current (mA)
95
VOUT=5.0V
150
200
250
300
350
400
Output Current (mA)
Efficiency (ref. to Fig.38)
Fig. 46
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Ripple Voltage (ref. to Fig.38)
15 of 16
SS6610/11G
PHYSICAL DIMENSIONS
8 LEAD MSOP
D
SYMBOL
MIN
MAX
A1
--
0.20
A2
0.76
0.97
b
0.28
0.38
C
0.13
0.23
D
2.90
3.10
E
4.80
5.00
E1
2.90
3.10
E
E1
e
A2
e
C
0.40
0.66
A1
L
0.65
L
b
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
SS6610G = 1610PO, SS6611G = 1611PO
1610PO
SSSYM
Date/lot code:
SSS = lot code sequence
Y = year (C=2005, I=2006, D=2007...)
M = month (1-9,A,B,C)
PACKING:
Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
4/21/2006 Rev.3.01
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