SSM4407GM
P-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
-30V
R DS(ON)
14mΩ
ID
-10.7A
DESCRIPTION
The SSM4407GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM4407GM is supplied in a RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
Pb-free; RoHS-compliant SO-8
D
D
D
D
G
SO-8
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Units
VDS
Drain-source voltage
-30
V
VGS
Gate-source voltage
±25
V
ID
Continuous drain current, TC = 25°C
-10.7
A
-8.6
A
-50
A
TC = 70°C
1
IDM
Pulsed drain current
PD
Total power dissipation, TC = 25°C
Linear derating factor
2.5
W
0.02
W/°C
TSTG
Storage temperature range
-55 to 150
°C
TJ
Operating junction temperature range
-55 to 150
°C
THERMAL CHARACTERISTICS
Symbol
RΘ JA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
Units
50
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 125°C/W when mounted on the minimum pad area required for soldering.
12/16/2005 Rev.3.01
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SSM4407GM
ELECTRICAL CHARACTERISTICS
Symbol
(at Tj = 25°C, unless otherwise specified)
Parameter
Test Conditions
Min.
Typ.
Max. Units
-60
-
-
V
BVDSS
Drain-source breakdown voltage
VGS=0V, ID=-250uA
∆ BV DSS/∆ Tj
Breakdown voltage temperature coefficient
Reference to 25°C, ID=-1mA
-
-0.015
-
V/°C
RDS(ON)
Static drain-source on-resistance2
VGS=-10V, ID=-10A
-
-
14
mΩ
VGS=-4.5V, ID=-5A
-
-
25
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
-
13
-
S
VGS(th)
Gate threshold voltage
gfs
Forward transconductance
VDS=-10V, ID=-10A
IDSS
Drain-source leakage current
VDS=-30V, VGS=0V
-
-
-1
uA
VDS=-24V ,VGS=0V, Tj = 70°C
-
-
-25
uA
VGS=±25V
-
-
±100
nA
ID=-10A
-
28
45
nC
nC
IGSS
Gate-source leakage current
2
Qg
Total gate charge
Qgs
Gate-source charge
VDS=-24V
-
5.2
-
Qgd
Gate-drain ("Miller") charge
VGS=-10V
-
19.8
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on delay time
tr
Rise time
ID=-1A
-
11
-
ns
td(off)
Turn-off delay time
RG=6.8Ω , VGS=-10V
-
97
-
ns
tf
Fall time
RD=15Ω
-
72
-
ns
Ciss
Input capacitance
VGS=0V
-
1960
3200
pF
Coss
Output capacitance
VDS=-25V
590
-
pF
Crss
Reverse transfer capacitance
f=1.0MHz
-
465
-
pF
Min.
Typ.
IS=-2A, VGS=0V
-
-
-1.2
V
-
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward voltage
trr
Reverse-recovery time
IS=-10A, VGS=0V,
-
36
-
ns
Qrr
Reverse-recovery charge
dI/dt=100A/µs
-
34
-
nC
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
12/16/2005 Rev.3.01
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SSM4407GM
40
T A =25 o C
-10V
-5.0V
-4.5V
-4.0V
-ID , Drain Current (A)
36
T A =150 o C
36
30
24
18
V G =-3.0V
12
6
28
24
20
16
12
V G =-3.0V
8
4
0
0
0
1
2
0
3
1
1
2
2
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.80
25
I D =-10A
I D =-10A
V GS = -10V
1.60
Normalized RDS(ON)
T A =25 o C
20
RDS(ON) (mΩ )
-10V
-5.0V
-4.5V
-4.0V
32
-ID , Drain Current (A)
42
15
1.40
1.20
1.00
0.80
0.60
10
3
5
7
9
11
-50
0
50
100
150
o
T j , Junction Temperature ( C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
3
100.00
10.00
2
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1.00
1
0.10
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
12/16/2005 Rev.3.01
50
100
T j , Junction Temperature (
150
o
C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM4407GM
f=1.0MH
14
10000
I D = -10A
V DS = -24V
-VGS , Gate to Source Voltage (V)
12
10
Ciss
C (pF)
8
6
1000
Coss
Crss
4
2
100
0
0
2
4
6
8
10
12
14
16
1
18
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100us
10
1ms
10ms
-ID (A)
1
100ms
0.1
1s
10s
DC
T A =25 o C
Single Pulse
0.01
Normalized Thermal Response (Rthja)
100
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
RΘJA = 125°C/W
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
12/16/2005 Rev.3.01
Charge
Q
Fig 12. Gate Charge Waveform
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SSM4407GM
PHYSICAL DIMENSIONS
D
SYMBOL
MIN
MAX
A
1.35
1.75
A1
0.10
0.25
B
0.33
0.51
C
0.19
0.25
D
4.80
5.00
E
3.80
4.00
H
E
e
e
A
A1
C
B
L
1.27(TYP)
H
5.80
6.50
L
0.38
1.27
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 4407GM
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel packed in a moisture barrier bag (MBB).
12/16/2005 Rev.3.01
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