SSM72T02GH
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
Simple Drive Requirement
Low On-Resistance
25V
RDS(ON)
9mΩ
62A
ID
G
Fast Switching Characteristic
BVDSS
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM72T02GH) are available for low-profile applications.
G
D
S
TO-252(H)
TO-251(J)
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
± 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
62
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
44
A
190
A
60
W
0.4
W/℃
29
mJ
24
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
THERMAL DATA
Symbol
.
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.5
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
02/21/2008 Rev.1.00
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SSM72T02GH
ELECTRICAL CHARACTERISTICS
o
(TJ=25 C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
25
-
-
V
-
0.02
-
V/℃
VGS=10V, ID=30A
-
8
9
mΩ
VGS=4.5V, ID=15A
-
11
15
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
42
-
S
IDSS
Drain-Source Leakage Current (T j=25oC)
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=175oC)
VDS=20V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=30A
-
13
21
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
IGSS
Static Drain-Source On-Resistance
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
930
1490
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
IS=15A, VGS=0V,
-
26
-
ns
dI/dt=100A/µs
-
15
-
nC
SOURCE-DRAIN DIODE
Symbol
VSD
Parameter
Test Conditions
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
02/21/2008 Rev.1.00
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2
SSM72T02GH
120
180
10V
7.0V
ID , Drain Current (A)
10V
7.0V
o
T C =175 C
ID , Drain Current (A)
o
T C =25 C
120
5.0V
4.5V
60
5.0V
80
4.5V
40
V G =3.0V
V G =3.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I D =30A
V G =10V
Normalized RDS(ON)
I D =15A
T C =25 ℃
RDS(ON) (mΩ)
25
15
5
1.4
1
0.6
2
4
6
8
10
-50
0
50
100
150
200
T j , Junction Temperature ( o C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
Normalized VGS(th) (V)
30
20
IS(A)
T j =175 o C
T j =25 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
Fig 5. Forward Characteristic of
Reverse Diode
02/21/2008 Rev.1.00
0
50
100
150
200
T j , Junction Temperature ( o C )
V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSM72T02GH
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D = 30 A
9
C (pF)
V DS = 10 V
V DS = 15 V
V DS = 20 V
6
1000
C iss
3
C oss
C rss
100
0
0
10
20
1
30
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
40
120
T j =25 o C
80
2.8V 3V
30
T j =175 o C
RDS(ON) (mΩ )
ID , Drain Current (A)
V DS =5V
40
3.2V
4.2V
3.8V
20
4.5V
10V
10
0
3.5V
0
0
2
4
6
8
0
20
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
02/21/2008 Rev.1.00
40
60
80
100
I D (A)
Fig 12. Drain-Source On Resistance
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SSM72T02GH
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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