SSM85T08GP
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
BVDSS
80V
RDS(ON)
13mΩ
75A
ID
G
S
DESCRIPTION
The Advanced Power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters. The through-hole version
(SSM85T08GP) are available for low-profile applications.
Pb-free; RoHS-compliant
TO-263(S)
G
D
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
S
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
80
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
75
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
48
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
260
A
138
W
1.11
W/℃
450
mJ
30
A
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
0.9
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
℃/W
08/06/2007 Rev.1.00
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1
SSM85T08GP
ELECTRICAL CHARACTERISTICS
o
@TJ=25 C (unless otherwise specified )
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
80
-
-
V
-
0.09
-
V/℃
VGS=10V, ID=45A
-
-
13
mΩ
VGS=4.5V, ID=25A
-
-
18
mΩ
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=45A
-
70
-
S
IDSS
Drain-Source Leakage Current (T j=25oC)
VDS=80V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150oC)
VDS=64V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ±20V
-
-
±100
nA
ID=45A
-
63
100
nC
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
VGS(th)
IGSS
Static Drain-Source On-Resistance
2
VGS=0V, ID=1mA
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=64V
-
23
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
38
-
nC
VDS=40V
-
30
-
ns
td(on)
Turn-on Delay Time
2
tr
Rise Time
ID=45A
-
100
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
144
-
ns
tf
Fall Time
RD=0.89Ω
-
173
-
ns
Ciss
Input Capacitance
VGS=0V
-
6300
10080
pF
Coss
Output Capacitance
VDS=25V
-
670
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
350
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
Max.
Units
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V
-
47
-
ns
dI/dt=100A/µs
-
86
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
08/06/2007 Rev.1.00
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2
SSM85T08GP
120
250
10V
7.0 V
T C = 25 o C
10V
7.0 V
5.0V
o
T C = 150 C
ID , Drain Current (A)
ID , Drain Current (A)
200
150
5.0V
100
4.5V
90
4.5V
60
30
V G =3.0V
50
V G =3.0V
0
0
0
3
6
9
0
12
3
Fig 1. Typical Output Characteristics
9
12
Fig 2. Typical Output Characteristics
14
2.0
I D =45A
V G =10V
I D =20A
T C =25 o C
1.6
Normalized R DS(ON)
13
RDS(ON) (mΩ )
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
12
1.2
0.8
11
0.4
10
2
4
6
8
-50
10
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
50
Normalized VGS(th) (V)
IS(A)
40
30
T j =150 o C
T j =25 o C
20
1.5
1.0
0.5
10
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-50
V SD , Source-to-Drain Voltage (V)
08/06/2007 Rev.1.00
50
100
150
o
T j , Junction Temperature ( C)
Fig 5. Forward Characteristic of
Reverse Diode
0
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSM85T08GP
f=1.0MHz
12
10000
I D = 45 A
C iss
V DS = 4 0 V
V DS = 50 V
V DS = 64 V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
1000
C oss
4
C rss
2
100
0
0
20
40
60
80
1
100
5
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
T c =25 o C
Single Pulse
10ms
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
0.01
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
120
VG
ID , Drain Current (A)
V DS =5V
T j =25 o C
T j =150 o C
QG
80
4.5V
QGS
QGD
40
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
08/06/2007 Rev.1.00
Fig 12. Gate Charge Waveform
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SSM85T08GP
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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