SFT210DE Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 50 mA, 30 Volt, 1 nsec High Speed Analog DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ N-Channel DMOSFET switch SFT210 DE __ │ │ │ │ 2/ │ └ Screening __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package DE = TO-72 • • • • • • • Features: Ultra-High Speed Switching – tON = 1 ns Ultra-Low Reverse Capacitance: 0.2pF Low Guaranteed rDS @ 5V Low Turn-On Threshold Voltage N-Channel Enhancement Mode Replacement for SD210DE TX, TXV, and S-Level Screening Available. Consult 2/ Factory. Maximum Ratings Symbol Max Units Drain – Source Breakdown Voltage Source – Drain Voltage VDS VSD 30 10 Volts Gate - Drain Voltage VGD +40 Volts Gate - Source Voltage VGS +40 Volts Gate – Body (substrate) Voltage VGb +30 Volts Drain – Body (substrate) Voltage VDb 30 Volts Source – Body (substrate) Voltage VSb 15 Volts ID 50 mA PD 300 1.2 mWatts Watts RΘJA RΘJC 335 85 ºC/W TL 300 ºC TOP TSTG -55 to +125 -65 to +150 ºC ºC Drain Current o Power Dissipation TA= 25 C TC= 25oC Maximum Thermal Resistance Lead Temperature Junction to Ambient Junction to Case (1/16” from case for 10 seconds) Operating & Storage Temperature PACKAGE OUTLINE: TO-72 PIN ASSIGNMENT PIN 1 Source PIN 2 Drain PIN 3 Gate Body (Substrate) PIN 4 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0035A DOC SFT210DE Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 3/ Symbol Typ Min Max Units Drain – Source Breakdown Voltage VGS = VBS = 0 V, ID = 10μA VGS = VBS = -5 V, ID = 10nA V(BR)DS 35 30 30 10 -- Volts Source – Drain Breakdown Voltage VGD = VBD = -5 V, IS = 10nA V(BR)SD 22 10 -- Volts Drain – Substrate Breakdown Voltage VGB = 0 V, ID = 10nA, Source Open V(BR)DBO 35 15 -- Volts Source – Substrate Breakdown Voltage VGB = 0 V, IS = 10μA, Drain Open V(BR)SBO 35 15 -- Volts VGS = 5 V VGS = 10 V VGS = 15 V VGS = 20 V VGS = 25 V rDS(ON) 58 38 30 26 24 ------ 70 45 ---- Ohms Drain – Source ON State Resistance (ID = 1 mA, VSB = 0 V) Drain – Source Leakage VGS = VBS = -5V VDS = 10V VDS = 20V IDS(off) 0.5 1.0 --- 10 -- nA Source – Drain Leakage VGD = VBD = -5V VSD = 10V VSD = 20V ISD (off) 0.5 0.8 --- 10 -- nA VDB = VSB = 0 V, VGB = ±40V IGBS 0.001 -- 0.1 nA VDS = VGS, ID = 1μA, VSB =0V VGS(th) 0.8 0.5 2.0 Volts gfs gos 11 0.9 10 -- --- mS C(GS+GD+GB) 2.5 -- 3.5 pF C(GD+GB) 1.1 -- 1.5 pF C(GS+SB) 3.7 -- 5.5 pF Crss (CDG) 0.2 -- 0.5 pF td (on) 0.5 -- 1 ns tr 0.6 -- 1 ns td (off) 2 -- -- ns tf 6 -- -- ns Gate Leakage Threshold Voltage Forward Transconductance VDS = 10V, VSB = 0 V , ID = 20mA, f = 1 kHz Gate Node Capacitance Drain Node Capacitance Source Node Capacitance VDS = 10V, f = 1MHz VGS = VBS = -15V Reverse Transfer Capacitance Turn ON Delay Time Rise Time Turn OFF Delay Time VSB = 0 V, VIN 0 to 5 V, RG = 25 Ω VDD = 5 V, RL = 680 Ω Fall Time NOTES: * Pulse Test: Pulse Width = 100 μsec, Duty Cycle = 2% 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC . NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0035A DOC