SFF4393A2GW Solid State Devices, Inc. Dual Microminiature Package 50 mA 40 Volts Dual N-Channel JFET Transistor 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF4393A2 __ __ Features: Low ON Resistance Low Capacitance, < 4 pF Fast Switching, ton < 5 ns Used for Analog Switches, Choppers, Current Limiters, and Sample-and-Hold Applications TX, TXV, and S-Level Screening Available. Consult Factory. • • • • │ │ │ │ │ └ Screening 2/ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package 3/ GW = GULLWING • Maximum Ratings Symbol Value Units Drain – Source Voltage VDS 40 Volts Drain – Gate Voltage VDG 40 Volts Reverse Gate – Source Voltage VSG 40 Volts ID 50 mA PD 500 660 mW mW RΘJA 5/ 245 ºC/W TL 300 ºC T OP & TSTG -65 to +200 ºC Drain Current Per Device Total Power Dissipation @ T A= 25oC Maximum Thermal Resistance Junction to Ambient Lead Temperature (1/16” from the seated surface for 60 seconds) Operating & Storage Temperature PACKAGE OUTLINE: GULLWING (GW) 2 x .05 0 (=.1 00) .015 3x .015 . 015±.010 PIN 6 PIN 4 PIN 4 6x .010 PIN 6 6x .030 SSDI 5x R.018 .125 .034 .025 PIN 3 PIN 3 PIN 1 .350 ±.01 0 .193 PIN 1 .107 .040 ±.010 .107 .130 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. .010 6x R.0 10 .033 .035 DATA SHEET #: FT0010B DOC SFF4393A2GW Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Electrical Characteristics 4/ Symbol Min -40 Gate – Source Breakdown Voltage IG = -1µA, VDS = 0 V BVGSS Static, Drain – Source ON State Resistance ID = 1 mA, VGS = 0 V rDS(ON) Gate to Source Cutoff Voltage VDS = 20 V, ID = 1 nA VGS(OFF) -0.5 Max Units –– Volts 100 Ohms -3.0 Volts Gate to Source Leakage Current VGS = -20 V, VDS = 0 V VDG = -20 V, VDS = 0 V, TA = 150ºC IGSS -100 -200 pA nA Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V IDSS 35 mA VDS = 20 V, VGS = -5 V VDS = 20 V, VGS = -5 V, TA = 150ºC ID(OFF) 100 200 pA nA IG = 1 mA, VDS = 0 V VGS(F) 1.2 Volts ID = 3.0 mA, VGS = 0 V VDS(ON) 0.4 Volts rds(on) 100 Ohms Drain Cutoff Current Gate to Source Forward Voltage Drain to Source “ON” Voltage Small Signal, Drain – Source ON Resistance Small Signal, Common-Source, ShortCircuit Input Capacitance Small Signal, Common-Source, ShortCircuit Reverse Transfer Capacitance VGS = 0 V, ID = 0 A, f = 1 kHz VDS = 20 V, VGS = 0 V, f = 1 MHz Ciss –– 16 pF VDS = 0 V, VGS = -5 V, f = 1 MHz Crss –– 4.5 pF VDD = 10 V, VGS (on) = 0 V, ID (on) = 3.0 mA, VGS (off) = -5 V td (on) –– 15 ns tr VDD = 10 V, VGS (on) = 0 V, ID (on) = 3.0 mA, VGS (off) = -5 V td (off) tf –– –– –– 5 50 30 ns ns ns Turn ON Delay Time Rise Time Turn OFF Delay Time Fall Time NOTES: * Pulse Test: Pulse Width = 100 μsec, Duty Cycle = 2% 3/ For Package Outlines Contact Factory. 1/ For Ordering Information, Price, and Availability Contact Factory. 2/ Screening per MIL-PRF-19500 4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC 5/ Mounted on FR1 PCB Available Part Numbers: SFF4393A2GW Package Gullwing Pin 1 Gate NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. Pin 2 Source PIN ASSIGNMENT Pin 3 Pin 4 Drain Gate DATA SHEET #: FT0010B Pin 5 Source Pin 6 Drain DOC