SSDI SFF4393A2GW

SFF4393A2GW
Solid State Devices, Inc.
Dual Microminiature Package
50 mA 40 Volts
Dual N-Channel JFET Transistor
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFF4393A2 __ __
Features:
Low ON Resistance
Low Capacitance, < 4 pF
Fast Switching, ton < 5 ns
Used for Analog Switches, Choppers, Current
Limiters, and Sample-and-Hold Applications
TX, TXV, and S-Level Screening Available.
Consult Factory.
•
•
•
•
│ │
│ │
│ └ Screening 2/ __ = Not Screened
│
TX = TX Level
│
TXV = TXV Level
│
S = S Level
└ Package 3/ GW = GULLWING
•
Maximum Ratings
Symbol
Value
Units
Drain – Source Voltage
VDS
40
Volts
Drain – Gate Voltage
VDG
40
Volts
Reverse Gate – Source Voltage
VSG
40
Volts
ID
50
mA
PD
500
660
mW
mW
RΘJA 5/
245
ºC/W
TL
300
ºC
T OP & TSTG
-65 to +200
ºC
Drain Current
Per Device
Total
Power Dissipation @ T A= 25oC
Maximum Thermal Resistance
Junction to Ambient
Lead Temperature
(1/16” from the seated surface for 60 seconds)
Operating & Storage Temperature
PACKAGE OUTLINE: GULLWING (GW)
2 x .05 0
(=.1 00)
.015
3x .015
. 015±.010
PIN 6
PIN 4
PIN 4
6x .010
PIN 6
6x .030
SSDI
5x R.018
.125
.034
.025
PIN 3
PIN 3
PIN 1
.350
±.01 0
.193
PIN 1
.107
.040
±.010
.107
.130
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
.010
6x R.0 10
.033
.035
DATA SHEET #: FT0010B
DOC
SFF4393A2GW
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics 4/
Symbol
Min
-40
Gate – Source Breakdown Voltage
IG = -1µA, VDS = 0 V
BVGSS
Static, Drain – Source ON State
Resistance
ID = 1 mA, VGS = 0 V
rDS(ON)
Gate to Source Cutoff Voltage
VDS = 20 V, ID = 1 nA
VGS(OFF)
-0.5
Max Units
––
Volts
100
Ohms
-3.0
Volts
Gate to Source Leakage Current
VGS = -20 V, VDS = 0 V
VDG = -20 V, VDS = 0 V, TA = 150ºC
IGSS
-100
-200
pA
nA
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
IDSS
35
mA
VDS = 20 V, VGS = -5 V
VDS = 20 V, VGS = -5 V, TA = 150ºC
ID(OFF)
100
200
pA
nA
IG = 1 mA, VDS = 0 V
VGS(F)
1.2
Volts
ID = 3.0 mA, VGS = 0 V
VDS(ON)
0.4
Volts
rds(on)
100
Ohms
Drain Cutoff Current
Gate to Source Forward Voltage
Drain to Source “ON” Voltage
Small Signal, Drain – Source ON
Resistance
Small Signal, Common-Source, ShortCircuit Input Capacitance
Small Signal, Common-Source, ShortCircuit Reverse Transfer Capacitance
VGS = 0 V, ID = 0 A, f = 1 kHz
VDS = 20 V, VGS = 0 V, f = 1 MHz
Ciss
––
16
pF
VDS = 0 V, VGS = -5 V, f = 1 MHz
Crss
––
4.5
pF
VDD = 10 V, VGS (on) = 0 V,
ID (on) = 3.0 mA, VGS (off) = -5 V
td (on)
––
15
ns
tr
VDD = 10 V, VGS (on) = 0 V,
ID (on) = 3.0 mA, VGS (off) = -5 V
td (off)
tf
––
––
––
5
50
30
ns
ns
ns
Turn ON Delay Time
Rise Time
Turn OFF Delay Time
Fall Time
NOTES:
* Pulse Test: Pulse Width = 100 μsec, Duty Cycle = 2%
3/ For Package Outlines Contact Factory.
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC
5/ Mounted on FR1 PCB
Available Part
Numbers:
SFF4393A2GW
Package
Gullwing
Pin 1
Gate
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Pin 2
Source
PIN ASSIGNMENT
Pin 3
Pin 4
Drain
Gate
DATA SHEET #: FT0010B
Pin 5
Source
Pin 6
Drain
DOC