ST2342 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION ST2342 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE PIN CONFIGURATION SOT-23-3L z 3 z D z G S z 1 2 z 1.Gate 2.Source 3.Drain z 20V/4.8A, RDS(ON) = 26mΩ (Typ.) @VGS = 4.5V 20V/4.5A, RDS(ON) = 28mΩ @VGS = 2.5V 20V/4.0A, RDS(ON) = 36mΩ @VGS = 1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design PART MARKING SOT-23-3L 3 42YA 1 Y: Year Code 2 A: Process Code ORDERING INFORMATION Part Number Package Part Marking ST2342S23RG SOT-23L 42YA ※ Process Code : A ~ Z ; a ~ z ※ ST2342S23RG S23 : SOT-3L23 ; R : Tape Reel ; G : Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 ST2342 N Channel Enhancement Mode MOSFET 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 5.0 4.0 A IDM 13 A Continuous Source Current (Diode Conduction) IS 1.0 A TA=25℃ TA=70℃ PD 1.25 0.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 140 Continuous Drain CurrentTJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 ST2342 N Channel Enhancement Mode MOSFET 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit V(BR)DSS VGS=0V,ID=250uA 20 VGS(th) VDS=VGS,ID=250uA 0.4 IGSS Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 1.0 V VDS=0V,VGS=±12V ±100 nA VDS=20V,VGS=0V 1 10 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V TJ=55℃ On-State Drain Current ID(on) VDS≧5V,VGS=4.5V Drain-source On-Resistance RDS(on) VGS=4.5V,ID=5.0A VGS=2.5V,ID=4.5A VGS=1.8V,ID=4.0A 0.026 0.028 0.036 Ω Forward Transconductance gfs VDS=15V,ID=4.8A 30 S Diode Forward Voltage VSD IS=1.0A,VGS=0V 0.8 1.2 Total Gate Charge Qg 10 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=10V VGS=4.5V ID≣4.8A Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Turn-On Time td(on) Turn-Off Time td(off) 6 uA A V Dynamic Crss tr tf VDS=10V VGS=0V F=1MHz VDD=10V RL=10Ω ID=1.0A VGEN=4.5V RG=6Ω 1.4 nC 2.1 600 120 pF 100 15 25 40 60 45 65 30 40 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 ST2342 N Channel Enhancement Mode MOSFET 5.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 ST2342 N Channel Enhancement Mode MOSFET 5.0A TYPICAL CHARACTERICTICS (25℃ Unless noted) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1 ST2342 N Channel Enhancement Mode MOSFET 5.0A SOT-23L PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST2342 2006. V1