STP9527 P Channel Enhancement Mode MOSFET -10.0A suSCRIPTION STP9527 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther battery powered circuits where high-side witching. FEATURE PIN CONFIGURATION SOP-8 -40V/-10.0A, RDS(ON) = 32mΩ (Typ.) @VGS =-10V -40V/-8.0A, RDS(ON) = 38mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 ORDERING INFORMATION Part Number Package Part Marking STP9527 SOP-8 STP9527 ※ Process Code : A ~ Z ; a ~ z STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Symbol Typical Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V ID -10.0 -8.0 A IDM -30 A IS -2.3 A PD 2.8 1.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 Parameter Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -40 VGS(th) VDS=VGS,ID=-250 uA -0.8 Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS=-5V,VGS=4.5 Drain-source On-Resistance RDS(on) VGS=-10V, ID=-10A VGS=-4.5V, ID=-8A Forward Tran Conductance gfs VDS=-15V,ID=-5.7A 13 Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 13 20 Parameter Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V -2.5 V VDS=0V,VGS=±20V ±100 nA VDS=-36V,VGS=0V VDS=-36V,VGS=0V TJ=85℃ -1 -10 -10 uA A 0.032 0.040 0.038 0.050 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time td(on) Turn-Off Time tr td(off) VDS=-20V,VGS=-4.5 ID≡-5.0A 4.5 nC 6.5 1100 VDS =-20V,VGS=0V f=1MHz pF 145 115 VDD=20V,RL=4Ω ID=-5.0A,VGEN=-4.5 RG=1Ω tf 40 80 55 100 30 60 12 20 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1 STP9527 P Channel Enhancement Mode MOSFET -10.0A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9527 2007. V1