STN4440 N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN4440 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. FEATURE PIN CONFIGURATION SOP-8 � � � � � 60V/10.0A, RDS(ON) = 50mΩ (Typ.) @VGS = 10V 60V/8.0A, RDS(ON) = 70mΩ @VGS = 4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1 STN4440 N Channel Enhancement Mode MOSFET 5.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 5.0 4.0 A IDM 20 A IS 4.0 A PD 2.5 1.6 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1 STN4440 N Channel Enhancement Mode MOSFET 5.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 60 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=48V,VGS=0V 1 5 Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V TJ=5℃ On-State Drain Current ID(on) VDS≧5V,VGS=10V Drain-source OnResistance V VGS=10V,ID=10A RDS(on) VGS=4.5V,ID=8A 20 uA A 50 mΩ 70 Forward Transconductance gfs VDS=5V,ID=6.2AV 11 Diode Forward Voltage VSD IS=1A,VGS=0V 0.8 1.2 9 11 S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time Turn-Off Time VDS=30V,VGS=10V ID≡5A nC 2.2 450 VDS ==30V,VGS=0V F=1MHz 60 pF 25 td(on) tr td(off) tf 1.6 VDD=10V,RL= 6Ω VDS=30V,RG=3Ω 5.1 7 2.6 4 16 20 2.5 3 nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1 STN4440 N Channel Enhancement Mode MOSFET 5.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1 STN4440 N Channel Enhancement Mode MOSFET 5.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1 STN4440 N Channel Enhancement Mode MOSFET 5.0A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4440 2009. V1