STN1810 N Channel Enhancement Mode MOSFET 8.0A DESCRIPTION STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These applications such as notebook computer power management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded. FEATURE PIN CONFIGURATION SOP-8 60V/8.0A, RDS(ON) = 140mΩ (Typ.) @VGS = 10V 60V/6.5.0A, RDS(ON) = 150mΩ @VGS = 7.0V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING Y: Year Code A: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V ID 8.0 6.0 A IDM 12 A IS 2.3 A PD 2.8 1.8 W TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=250uA 100 VGS(th) VDS=VGS,ID=250uA 1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V 3.0 V VDS=0V,VGS=±20V ±100 nA VDS=80V,VGS=0V 250 5 Zero Gate Voltage Drain Current IDSS VDS=80V,VGS=0V TJ=5℃ On-State Drain Current ID(on) VDS≧5V,VGS=10V 8 A VGS=10V,ID=10A 140 155 VGS=7.0V,ID=6.5A 150 170 gfs VDS=5V,ID=6.2AV 5.6 VSD IS=1A,VGS=0V Drain-source OnResistance RDS(on) Forward Transconductance Diode Forward Voltage uA mΩ S 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss Turn-On Time Turn-Off Time td(on) tr td(off) tf 10 VDS=80V,VGS=5V ID≡5A 2.5 16 nC 4.2 430 VDS =25V,VGS=0V F=1MHz 58 pF 33 6.5 VDD=50V,RD=10Ω VDS=30V,RG=3.3Ω ID≡5A 10 nS 13 3.4 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1 STN1810 N Channel Enhancement Mode MOSFET 8.0A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN1810 2009. V1