STANSON STN1810

STN1810
N Channel Enhancement Mode MOSFET
8.0A
DESCRIPTION
STN1810 is the N-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance and provide superior
switching performance. These applications such as notebook computer power
management and other battery powered circuits where high-side switching, low inline power loss and resistance to transients are melded.
FEATURE
PIN CONFIGURATION
SOP-8
60V/8.0A, RDS(ON) = 140mΩ (Typ.)
@VGS = 10V
60V/6.5.0A, RDS(ON) = 150mΩ
@VGS = 7.0V
Super high density cell design for
extremely low RDS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
Y: Year Code A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
ID
8.0
6.0
A
IDM
12
A
IS
2.3
A
PD
2.8
1.8
W
TJ
150
℃
Storgae Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
℃/W
Continuous Drain Current
(TJ=150℃)
TA=25℃
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
TA=25℃
TA=70℃
Operation Junction Temperature
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )
Parameter
Symbol
Condition
Min
V(BR)DSS
VGS=0V,ID=250uA
100
VGS(th)
VDS=VGS,ID=250uA
1.0
IGSS
Typ
Max
Unit
Static
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
Gate Leakage Current
V
3.0
V
VDS=0V,VGS=±20V
±100
nA
VDS=80V,VGS=0V
250
5
Zero Gate Voltage
Drain Current
IDSS
VDS=80V,VGS=0V
TJ=5℃
On-State Drain
Current
ID(on)
VDS≧5V,VGS=10V
8
A
VGS=10V,ID=10A
140
155
VGS=7.0V,ID=6.5A
150
170
gfs
VDS=5V,ID=6.2AV
5.6
VSD
IS=1A,VGS=0V
Drain-source OnResistance
RDS(on)
Forward
Transconductance
Diode Forward Voltage
uA
mΩ
S
1.3
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse
TransferCapacitance
Crss
Turn-On Time
Turn-Off Time
td(on)
tr
td(off)
tf
10
VDS=80V,VGS=5V
ID≡5A
2.5
16
nC
4.2
430
VDS =25V,VGS=0V
F=1MHz
58
pF
33
6.5
VDD=50V,RD=10Ω
VDS=30V,RG=3.3Ω
ID≡5A
10
nS
13
3.4
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1
STN1810
N Channel Enhancement Mode MOSFET
8.0A
PACKAGE OUTLINE SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
Copyright © 2007, Stanson Corp.
STN1810 2009. V1