235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A DESCRIPTION STP9235 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � � � � � � -25V/-7.5A, RDS(ON) = 45mΩ @VGS = -10V -25V/-6.0A, RDS(ON) = 55mΩ @VGS = -6.0V -25V/-5.4A, RDS(ON) = 65mΩ @VGS = -4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -25 V Gate-Source Voltage VGSS ±20 V ID -8.0 -6.0 A IDM -30 A IS -2.3 A PD 2.8 1.6 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 ℃/W Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min V(BR)DSS VGS=0V,ID=-250uA -25 VGS(th) VDS=VGS,ID=-250uA -1.0 IGSS Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V -3.0 V VDS=0V,VGS=±20V ±100 nA VDS=-18V,VGS=0V -1 -5 Zero Gate Voltage Drain Current IDSS VDS=-18V,VGS=0V TJ=85℃ On-State Drain Current ID(on) VDS=-5V,VGS=-4.5V Drain-source OnResistance RDS(on) VGS=-10V,ID=-7.5A VGS=-6.0V,ID=-6.0A VGS=-4.5V,ID=-5.4A 35 45 55 Forward Transconductance gfs VDS=-15V,ID=-5.7V 13 Diode Forward Voltage VSD IS=-2.3A,VGS=0V -0.8 -1.2 16 24 -10 uA A 45 55 65 mΩ S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-15V,VGS=-10V ID≡-3.5A 2.3 nC 4.5 Input Capacitance Ciss Output Capacitance Coss Reverse TransferCapacitance Crss 75 td(on) tr 14 25 15 26 42 70 30 50 Turn-On Time Turn-Off Time td(off) tf 680 VDS ==-15V,VGS=0V f=1MHz VDD=-15V,RL=15Ω ID=-1A,VGEN=-10V RG=6Ω 120 pF nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1 235 STP9 STP92 P Channel Enhancement Mode MOSFET - 7.5A PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP9235 2009. V1