4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A DESCRIPTION STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits Where hight-side switching. PIN CONFIGURATION SOP-8 FEATURE � � � � � � -20V/-8.5A, RDS(ON) = 20mΩ (Typ.) @VGS =-4.5V -20V/-8.0A, RDS(ON) = 25mΩ @VGS = -2.5V -20V/-5.0A, RDS(ON) = 35mΩ @VGS = -1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability SOP-8 package design PART MARKING SOP-8 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±12 V ID -8.5 -7.0 A IDM -30 A IS -2.3 A PD 2.8 1.8 W TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 70 Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ Pulsed Drain Current Continuous Source Current (Diode Conduction) Power Dissipation TA=25℃ TA=70℃ Operation Junction Temperature ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition V(BR)DSS VGS=0V,ID=-250uA Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) -20 V VDS=VGS,ID=-250 uA -0.35 -0.9 V nA IGSS VDS=0V,VGS=±12V ±100 Zero Gate Voltage Drain Current IDSS TJ=55℃ VDS=-16V,VGS=0V -1 VDS=-20V,VGS=0V -10 On-State Drain Current ID(on) VDS=-5V,VGS=4.5V Drain-source On-Resistance RDS(on) VGS=-4.5V, ID=-8.5A VGS=-2.5V, ID=-8.0A VGS=-1.8V,ID=-5.0A Forward Tran Conductance gfs VDS=-5.0V,ID=-10A Diode Forward Voltage VSD IS=-2.5A,VGS=0V Gate Leakage Current -25 0 0.016 0.020 0.020 0.025 0.028 0.035 36 uA A Ω S -0.8 -1.2 V Dynamic Total Gate Charge Qg 30 VDS=-10V,VGS=-5.0V ID≡-10A 45 Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.0 Input Capacitance Ciss 2670 Output Capacitance Coss Reverse TransferCapacitance Crss 480 Turn-On Time td(on) 25 40 45 70 145 240 70 115 Turn-Off Time tr td(off) VDS =-15V,VGS=0V f=1MHz VDD=-10V,RL=15Ω ID=-1.0A,VGEN=-4.5V RG=6Ω tf 4.5 nC 520 pF nS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A TYPICAL CHARACTERICTICS (25℃ Unless Note) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1 4931 STP STP4931 Dual P Channel Enhancement Mode MOSFET -8.5A SOP-8 PACKAGE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4931 2009. V1