IRF634B ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers. Fast Switching Ease of Paralleling Simple Drive Requirements PIN CONFIGURATION SYMBOL D TO-220 SO URCE DRAIN G ATE Top View G S 1 2 N-Channel MOSFET 3 ORDERING INFORMATION Part Number Package IRF634B...............................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed (Note 1) Symbol Value Unit ID 8.5 A IDM 36 Gate-to-Source Voltage Ё Continue VGS ±30 Total Power Dissipation PD Derate above 25к Single Pulse Avalanche Energy (Note 2) EAS V 74 W 0.59 W/к 200 mJ Avalanche Current (Note 1) IAR 8.5 A Repetitive Avalanche Energy (Note 1) EAR 7.4 mJ Peak Diode Recovery dv/dt (Note 3) Operating and Storage Temperature Range Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds dv/dt 5.5 V/ns TJ, TSTG -55 to 150 к șJC 1.70 к/W șJA 62 TL 300 к Page 1 IRF634B ! POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF634B Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 ӴA) Symbol Min V(BR)DSS 250 Typ Max Units V ӴA Drain-Source Leakage Current (VDS = 250V, VGS = 0 V) (VDS = 160V, VGS = 0 V, TJ = 125к) IDSS Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) IGSSF 100 nA Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 ӴA) VGS(th) 4.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 5.4A) (Note 4) RDS(on) 10 250 Forward Transconductance (VDS = 50V, ID = 5.4 A) (Note 4) Input Capacitance (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time (VDD = 100 V, ID = 5.9 A, RG = 12ȍ, RD = 16ȍ) (Note 4) Fall Time Total Gate Charge (VDS = 160V, ID = 5.9A VGS = 10 V) (Note 4) Gate-Source Charge Gate-Drain Charge gFS 2.0 ...............0.35..............0.45 3.8 ȍ mhos Ciss 780 Coss 100 pF pF Crss 26 pF td(on) 9.4 tr 28 ns ns td(off) 39 ns tf 20 ns Qg 43 Qgs 7.0 nC nC Qgd 23 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH Qrr 1.1 ton ** trr 170 SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage IF = 5.9A, di/dt = 100A/µs , TJ = 25к (Note 4) IS = 9.0A, VGS = 0 V, TJ = 25к (Note 4) VSD 2.2 µC 340 ns 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 50V, starting TJ = 25к, L=4.9mH, RG = 25ȍ, IAS = 8.5A (3) ISD Љ 8.5A, di/dt Љ 300A/µs, VDD Љ V(BR)DSS, TJ Љ 150к (4) Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ22% ** Negligible, Dominated by circuit inductance Page 2 IRF634B ! POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 0.1 20µs PULSE WIDTH T = 25 C ° J 0.01 0.1 1 10 10 4.5V 1 100 3.5 TJ = 25 ° C V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 7P 9.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C 5.0 10 100 Fig 2. Typical Output Characteristics 100 0.1 4.0 ° J 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH T = 175 C 0.1 0.1 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 7.9A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature Page 3 IRF634B ! POWER MOSFET VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 C, Capacitance(pF) Coss = Cds + Cgd Ciss 800 600 Coss 400 Crss 200 VGS , Gate-to-Source Voltage (V) 20 1200 10 100 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 1000 0 10 100 10 TJ = 175 ° C 1 TJ = 25 ° C V GS = 0 V 0.6 0.8 1.0 Fig 7. Typical Source-Drain Diode Forward Voltage P ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 0.4 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage VSD ,Source-to-Drain Voltage (V) 20 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 0.1 0.2 VDS = 200V VDS = 125V VDS = 50V 16 0 1 ID = 4.8A 1.2 OPERATION IN THIS AREA LIMITED BY R DS (on) 10 100µsec 1 1msec Tc = 25°C Tj = 175°C Single Pulse 0.1 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area Page 4 IRF634B ! POWER MOSFET VDS VGS I D , Drain Current (A) 8.0 RD D.U.T. RG + -VDD 6.0 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 50 25 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case P Page 5 IRF634B ! POWER MOSFET D R IV E R L VDS D .U .T RG + V - DD IA S 2V0GS V A 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 160 BOTTOM ID 2.0A 3.4A 4.8A 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform P IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Page 6