IRF IRFG5210

PD - 91664B
IRFG5210
POWER MOSFET
200V, Combination 2N-2P-CHANNEL
THRU-HOLE (MO-036AB)
HEXFET MOSFET TECHNOLOGY
®
Product Summary
Part Number
IRFG5210
IRFG5210
RDS(on)
1.6Ω
1.6Ω
ID
0.68A
-0.68A
CHANNEL
N
P
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages
of MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
MO-036AB
Features:
n
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light-weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
N-Channel
P-Channel
Units
0.68
0.4
-0.68
-0.4
A
Pulsed Drain Current ➀
2.72➀
-2.72➄
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
14
0.011
±20
64➁
—
—
20➂
14
0.011
±20
110➅
—
—
27⑦
ID @ VGS =± 10V, TC = 25°C Continuous Drain Current
ID @ VGS =± 10V, TC = 100°C Continuous Drain Current
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Lead Temperature
Weight
W
W/°C
V
mJ
A
mJ
V/ns
-55 to 150
o
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
C
g
For footnotes refer to the last page
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1
04/17/02
IRFG5210
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Min
BVDSS
Drain-to-Source Breakdown Voltage
200
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
g fs
Forward Transconductance
0.54
IDSS
Zero Gate Voltage Drain Current
—
—
Typ Max Units
—
V
0.27
—
—
—
—
—
—
—
—
1.6
1.83
4.0
—
25
250
V/°C
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
9.5
1.4
4.3
8.7
2.4
19
24
—
C iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
140
56
14
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
Ω
V
S( )
Ω
Parameter
µA
nA
nC
VGS = 10V, ID = 0.4A ➃
VGS = 10V, ID = 0.68A
VDS = VGS, ID = 0.25mA
VDS > 15V, IDS = 0.4A ➃
VDS= 160V, VGS= 0V
VDS = 160V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 0.68A,
VDS = 100V
ns
VDD = 100V, ID = 0.68A,
VGS =10V, RG = 7.5Ω
from drain lead (6mm/
.
nH Measured
0.25in. from package) to source
lead (6mm/0.25in. from package)
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
0.63
2.5
1.5
110
310
Test Conditions
A
V
nS
nC
Tj = 25°C, IS = 0.68A, VGS = 0V ➃
Tj = 25°C, IF = 0.68A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
17
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRFG5210
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
—
—
V
-0.22
—
V/°C
—
—
—
—
—
—
1.6
1.83
-4.0
—
-25
-250
Ω
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
18
2.8
8.4
15
11
36
43
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
320
110
20
—
—
—
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-200
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
0.64
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -0.4A
➃
VGS = -10V, ID =- 0.68A
VDS = VGS, ID = -0.25mA
VDS > -15V, IDS = -0.4A ➃
VDS= -160V, VGS= 0V
VDS = -160V,
VGS = 0V, TJ =125°C
VGS = - 20V
VGS = 20V
VGS = -10V, ID = -0.68A,
VDS = -100V
VDD = -100V, ID = -0.68A,
VGS = -10V, RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/
0.25in. from package) to source
lead (6mm/0.25in. from package)
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-0.61
-2.4
-4.8
120
420
Test Conditions
A
V
nS
nC
Tj = 25°C, IS = -0.68A, VGS = 0V ➃
Tj = 25°C, IF = -0.68A, di/dt ≤ -100A/µs
VDD ≤ -50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
17
90
°C/W
Test Conditions
Typical socket mount
For footnotes refer to the last page
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3
IRFG5210
N-Channel
Q1,Q3
10
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
1
4.5V
0.1
0.1
20µs PULSE WIDTH
T = 25 C
4.5V
10
100
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
7
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1
4
10
100
Fig 2. Typical Output Characteristics
TJ = 150 ° C
6
1
VDS , Drain-to-Source Voltage (V)
10
5
°
J
0.1
0.1
Fig 1. Typical Output Characteristics
0.1
20µs PULSE WIDTH
T = 150 C
°
J
1
1
VDS , Drain-to-Source Voltage (V)
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
2.5
ID = 0.68A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFG5210
N-Channel
Q1,Q3
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
240
180
Ciss
C
oss
120
60
C
rss
20
VGS , Gate-to-Source Voltage (V)
300
ID = 0.68A
V DS= 160V
V DS= 100V
V DS= 40V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 16
13a & b
0
0
1
10
0
100
4
6
8
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
2
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.2
100us
1
1ms
10ms
TC = 25 ° C
TJ = 150 °C
Single Pulse
0.1
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRFG5210
N-Channel
Q1,Q3
RD
0.7
V DS
I D , Drain Current (A)
0.6
VGS
D.U.T.
RG
0.5
+
-V DD
VGS
0.4
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.3
Fig 10a. Switching Time Test Circuit
0.2
VDS
0.1
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.1
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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IRFG5210
N-Channel
Q1,Q3
15V
D R IV E R
L
VDS
D .U .T.
RG
IA S
20V
VGS
tp
+
V
- DD
0 .01 Ω
Fig 12a. Unclamped Inductive Test Circuit
A
EAS , Single Pulse Avalanche Energy (mJ)
150
ID
0.30A
0.43A
BOTTOM 0.68A
TOP
120
90
60
30
0
25
V (B R )D S S
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
10V
12V
.2µF
.3µF
10 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRFG5210
P-Channel
Q2,Q4
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
-I D , Drain-to-Source Current (A)
TOP
1
-4.5V
20µs PULSE WIDTH
T = 150 C
°
J
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
TJ = 25 ° C
TJ = 150 ° C
1
V DS = -50V
20µs PULSE WIDTH
0.1
4
5
6
7
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
8
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
3.0
ID = -0.68A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
10V
0
20
40 60 80 100 120 140 160
TJ , Junction Temperature
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFG5210
P-Channel
Q2,Q4
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
500
400
Ciss
300
Coss
200
100
Crss
20
-VGS , Gate-to-Source Voltage (V)
600
10
VDS =-160V
VDS =-100V
VDS =-40V
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
0
VDS , Drain-to-Source Voltage (V)
4
8
12
16
20
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
16
0
1
ID = -0.68A
TJ = 150 ° C
1
TJ = 25 ° C
100us
1
1ms
V GS = 0 V
0.1
1.0
2.0
3.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4.0
0.1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
9
IRFG5210
P-Channel
Q2,Q4
RD
0.7
V DS
-ID , Drain Current (A)
0.6
VGS
D.U.T.
RG
0.5
+
0.4
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.3
Fig 10a. Switching Time Test Circuit
0.2
td(on)
0.1
tr
t d(off)
tf
VGS
10%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
0.01
1
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.1
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10
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IRFG5210
P-Channel
Q2,Q4
L
D .U .T.
RG
IA S
-20V
VGS
tp
300
VD D
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-0.30A
-0.43A
BOTTOM -0.68A
TOP
240
180
120
60
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-10V
12V
.2µF
.3µF
-10V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
11
IRFG5210
Footnotes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L= 276mH,
Peak IL = 0.68A, VGS = 10V
➂ ISD ≤ 0.68A, di/dt ≤ 290A/µs,
VDD ≤ 200V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➅VDD = - 50V, starting TJ = 25°C, L= 475mH,
Peak IL = - 0.68A, VGS = -10V
⑦ ISD ≤ - 0.68A, di/dt ≤ - 290A/µs,
VDD ≤ -200V, TJ ≤ 150°C
Case Outline and Dimensions — MO-036AB
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/02
12
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