FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A MOSFETs are produced using Fairchild Semiconductor’s mode Power advanced PowerTrench® process that has been especially Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A tailored Q2: P-Channel superior switching performance. Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A to minimize on-state resistance and yet maintain Applications Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A Inverter 100% UIL Tested H-Bridge RoHS Compliant D1 D2 D1/D2 G1 G2 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Q1 80 Q2 -80 Units V V ±20 ±20 Drain Current - Continuous TC = 25°C 13.9 -9.4 - Continuous TA = 25°C 4.3 -2.8 20 -10 ID - Pulsed Power Dissipation for Single Operation TC = 25°C PD EAS Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 1) 35 32 TA = 25°C (Note 1a) 3.1 TA = 25°C (Note 1b) 1.3 (Note 3) A 37 W 54 -55 to +150 mJ °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5 RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9 °C/W Package Marking and Ordering Information Device Marking FDD3510H Device FDD3510H ©2008 Fairchild Semiconductor Corporation FDD3510H Rev.C Package TO-252-4L 1 Reel Size 13” Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET April 2008 Symbol Parameter Test Conditions Type Min 80 -80 Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID =250µA, VGS = 0V ID = -250µA, VGS = 0V Q1 Q2 ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 IDSS Zero Gate Voltage Drain Current VDS = 64V, VGS = 0V VDS = -64V, VGS = 0V Q1 Q2 1 -1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V Q1 Q2 ±100 ±100 nA nA 4.0 -3.0 V V 84 -67 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 -6.7 4.6 VGS = 10V, ID = 4.3A VGS = 6.0V, ID = 4.1A VGS = 10V, ID = 4.3A, TJ = 125°C Q1 64 70 121 80 88 152 VGS = -10V, ID = -2.8A VGS = -4.5V, ID = -2.6A VGS = -10V, ID = -2.8A, TJ = 125°C Q2 153 184 259 190 224 322 VDD = 10V, ID = 4.3A VDD = -5V, ID = -2.8A Q1 Q2 15 6.8 Q1 VDS = 40V, VGS = 0V, f = 1MHZ Q1 Q2 600 660 800 880 pF Q1 Q2 56 50 75 70 pF Q1 Q2 27 25 41 40 pF Q1 Q2 1.7 7.2 Q1 Q2 7 6 13 11 ns Q1 Q2 2 3 10 10 ns Q1 Q2 16 25 29 40 ns Q1 Q2 2 5 10 10 ns Q1 Q2 13 14 18 20 nC Q1 Q2 2.3 1.9 nC Q1 Q2 3.2 2.9 nC rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 2.0 -1.0 2.6 -1.6 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -40V, VGS = 0V, f = 1MHZ f = 1MHz Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd FDD3510H Rev.C Gate to Drain “Miller” Charge Q1 VDD = 40V, ID = 4.3A, VGS = 10V, RGEN = 6Ω Q2 VDD = -40V, ID = -2.8A, VGS = -10V, RGEN = 6Ω Q1 VGS = 10V, VDD = 40V, ID = 4.3A Q2 VGS = -10V, VDD = -40V, ID = -2.8A 2 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Q1 Q2 0.8 -0.8 1.2 -1.2 V Q1 Q2 29 30 46 48 ns Q1 Q2 28 30 45 48 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 2.6A VGS = 0V, IS = -2.6A (Note 2) (Note 2) Q1 IF = 4.3A, di/dt = 100A/s Q2 IF = -2.8A, di/dt = 100A/s Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. Q1 a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper Q2 a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V. FDD3510H Rev.C 3 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 4.0 ID, DRAIN CURRENT (A) VGS = 10V VGS = 6V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 20 VGS = 4.5V 15 PULSE DURATION = Xµs DUTY CYCLE = X%MAX 10 VGS = 4V 5 VGS = 3.5V 0 0 1 2 3 VGS = 3.5V 3.5 3.0 VGS = 4V 2.5 VGS = 4.5V 2.0 VGS = 6V 1.5 1.0 VGS = 10V 0.5 4 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) 15 20 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.2 300 ID = 4.3A VGS = 10V 2.0 rDS(on), DRAIN TO 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT(A) Figure 1. On Region Characteristics 2 6 8 10 Figure 4. On-Resistance vs Gate to Source Voltage IS, REVERSE DRAIN CURRENT (A) 15 VDS = 5V 10 TJ = 150oC TJ = 25oC 5 TJ = -55oC 0 5 4 VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 4 TJ = 25oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 3 TJ = 125oC 100 20 2 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX ID = 4.3A 200 Figure 3. Normalized On Resistance vs Junction Temperature ID, DRAIN CURRENT (A) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 10 VGS = 0V 1 TJ = 150oC 0.1 TJ = -55oC 0.01 0.001 0.0 6 TJ = 25oC 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD3510H Rev.C 4 1.2 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 1000 ID = 4.3A Ciss 8 VDD = 40V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = 30V VDD = 50V 4 100 Coss 2 f = 1MHz VGS = 0V 0 0 2 4 6 8 10 12 10 0.1 14 Figure 7. Gate Charge Characteristics 10 100 Figure 8. Capacitance vs Drain to Source Voltage 15 5 4 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) 3 TJ = 25oC 2 TJ = 125oC 12 VGS = 10V 9 VGS = 6V 6 3 o RθJC = 3.5 C/W 1 0.01 0.1 1 0 25 10 50 150 5 P(PK), PEAK TRANSIENT POWER (W) 10 10 100us THIS AREA IS LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED RθJC = 3.5oC/W 0.1 TC = 25oC 1 10 1ms 10ms 100ms DC 100 VDS, DRAIN to SOURCE VOLTAGE (V) VGS = 10V 4 10 3 SINGLE PULSE RθJC = 3.5oC/W 10 TC = 25oC 2 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) Figure 11. Forward Bias Safe Operating Area FDD3510H Rev.C 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 50 0.05 0.5 100 o Figure 9. Unclamped Inductive Switching Capability 1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) ID, DRAIN CURRENT (A) Crss Figure 12. Single Pulse Maximum Power Dissipation 5 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZθJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJc + TC SINGLE PULSE o RθJC = 3.5 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 14. Transient Thermal Response Curve FDD3510H Rev.C 6 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted 2.5 VGS = -4.5V VGS = -10V -ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 10 8 VGS = -3.5V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 6 4 VGS = -3V 2 VGS = -2.5V 0 0 1 2 3 4 VGS = -2.5V VGS = -3V 2.0 VGS = -3.5V 1.5 VGS = -4.5V 1.0 0.5 5 0 2 -VDS, DRAIN TO SOURCE VOLTAGE (V) 8 10 600 ID = -2.8A VGS = -10V 1.8 rDS(on), DRAIN TO 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -75 -50 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 2.0 ID = -2.8A PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 500 400 TJ = 125oC 300 200 TJ = 25oC 100 100 125 150 2 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 18. On-Resistance vs Gate to Source Voltage Figure 17. Normalized On-Resistance vs Junction Temperature 10 -IS, REVERSE DRAIN CURRENT (A) 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) 4 6 -ID, DRAIN CURRENT(A) Figure 16. Normalized on-Resistance vs Drain Current and Gate Voltage Figure 15. On- Region Characteristics 8 VDS = -5V 6 4 TJ = 150oC 2 TJ = 25oC TJ = -55oC 0 1 2 3 4 VGS = 0V 1 TJ = 150oC TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Transfer Characteristics FDD3510H Rev.C VGS = -10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 20. Source to Drain Diode Forward Voltage vs Source Current 7 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted 1000 ID = -2.8A Ciss 8 VDD = -40V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 6 VDD = -30V VDD = -50V 4 100 2 f = 1MHz VGS = 0V 0 0 2 4 6 8 10 12 14 1 10 100 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 22. Capacitance vs Drain to Source Voltage Figure 21. Gate Charge Characteristics 10 -ID, DRAIN CURRENT (A) 4 3 TJ = 25oC 2 TJ = 125oC 8 VGS = -10V 6 VGS = -4.5V 4 2 o RθJC = 3.9 C/W 1 0.1 1 0 25 10 50 75 100 125 150 o TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE(ms) Figure 24. Maximum Continuous Drain Current vs Case Temperature Figure 23. Unclamped Inductive Switching Capability 20000 P(PK), PEAK TRANSIENT POWER (W) 20 10000 10 -ID, DRAIN CURRENT (A) Crss 10 0.1 16 Qg, GATE CHARGE(nC) -IAS, AVALANCHE CURRENT(A) Coss 100us 1ms 1 THIS AREA IS LIMITED BY rds(on) 10ms SINGLE PULSE TJ = MAX RATED 100ms o RθJC = 3.9 C/W 0.1 DC TC = 25oC 0.05 1 10 100 200 -VDS, DRAIN to SOURCE VOLTAGE (V) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: SINGLE PULSE X –o Tx RθJC = ------------------3.9 C/W I = I25 125 1000 TX = 25oC 100 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (s) Figure 25. Forward Bias Safe Operating Area FDD3510H Rev.C VGS = -10V Figure 26. Single Pulse Maximum Power Dissipation 8 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 3.9 C/W 0.001 -6 10 -5 -4 10 -3 10 -2 10 -1 10 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 27. Transient Thermal Response Curve 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 0.01 SINGLE PULSE t2 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA RθJA = 96 C/W (Note 1b) 0.001 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 28. Transient Thermal Response Curve FDD3510H Rev.C 9 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted Preliminary Datasheet The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDD3510H Rev.C 10 www.fairchildsemi.com FDD3510H Dual N & P-Channel PowerTrench® MOSFET TRADEMARKS