FAIRCHILD FDD3510H

FDD3510H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement
„ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
MOSFETs are produced using Fairchild Semiconductor’s
mode Power
advanced PowerTrench® process that has been especially
„ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
tailored
Q2: P-Channel
superior switching performance.
„ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
to minimize on-state resistance and
yet
maintain
Applications
„ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
„ Inverter
„ 100% UIL Tested
„ H-Bridge
„ RoHS Compliant
D1
D2
D1/D2
G1
G2
G2
S2
G1
S1
Dual DPAK 4L
S1
N-Channel
S2
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Q1
80
Q2
-80
Units
V
V
±20
±20
Drain Current - Continuous
TC = 25°C
13.9
-9.4
- Continuous
TA = 25°C
4.3
-2.8
20
-10
ID
- Pulsed
Power Dissipation for Single Operation
TC = 25°C
PD
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1)
35
32
TA = 25°C (Note 1a)
3.1
TA = 25°C (Note 1b)
1.3
(Note 3)
A
37
W
54
-55 to +150
mJ
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
3.5
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
3.9
°C/W
Package Marking and Ordering Information
Device Marking
FDD3510H
Device
FDD3510H
©2008 Fairchild Semiconductor Corporation
FDD3510H Rev.C
Package
TO-252-4L
1
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDD3510H Dual N & P-Channel PowerTrench® MOSFET
April 2008
Symbol
Parameter
Test Conditions
Type
Min
80
-80
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID =250µA, VGS = 0V
ID = -250µA, VGS = 0V
Q1
Q2
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 64V, VGS = 0V
VDS = -64V, VGS = 0V
Q1
Q2
1
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
Q1
Q2
±100
±100
nA
nA
4.0
-3.0
V
V
84
-67
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Q1
Q2
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
Q1
Q2
-6.7
4.6
VGS = 10V, ID = 4.3A
VGS = 6.0V, ID = 4.1A
VGS = 10V, ID = 4.3A, TJ = 125°C
Q1
64
70
121
80
88
152
VGS = -10V, ID = -2.8A
VGS = -4.5V, ID = -2.6A
VGS = -10V, ID = -2.8A, TJ = 125°C
Q2
153
184
259
190
224
322
VDD = 10V, ID = 4.3A
VDD = -5V, ID = -2.8A
Q1
Q2
15
6.8
Q1
VDS = 40V, VGS = 0V, f = 1MHZ
Q1
Q2
600
660
800
880
pF
Q1
Q2
56
50
75
70
pF
Q1
Q2
27
25
41
40
pF
Q1
Q2
1.7
7.2
Q1
Q2
7
6
13
11
ns
Q1
Q2
2
3
10
10
ns
Q1
Q2
16
25
29
40
ns
Q1
Q2
2
5
10
10
ns
Q1
Q2
13
14
18
20
nC
Q1
Q2
2.3
1.9
nC
Q1
Q2
3.2
2.9
nC
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
2.0
-1.0
2.6
-1.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q2
VDS = -40V, VGS = 0V, f = 1MHZ
f = 1MHz
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
FDD3510H Rev.C
Gate to Drain “Miller” Charge
Q1
VDD = 40V, ID = 4.3A,
VGS = 10V, RGEN = 6Ω
Q2
VDD = -40V, ID = -2.8A,
VGS = -10V, RGEN = 6Ω
Q1
VGS = 10V, VDD = 40V, ID = 4.3A
Q2
VGS = -10V, VDD = -40V, ID = -2.8A
2
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
-0.8
1.2
-1.2
V
Q1
Q2
29
30
46
48
ns
Q1
Q2
28
30
45
48
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.6A
VGS = 0V, IS = -2.6A
(Note 2)
(Note 2)
Q1
IF = 4.3A, di/dt = 100A/s
Q2
IF = -2.8A, di/dt = 100A/s
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
Q1
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
Q2
a. 40°C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a
minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 3mH, IAS = 5A, VDD = 80V, VGS = 10V; P-ch: L = 3mH, IAS = -6A, VDD = -80V, VGS = -10V.
FDD3510H Rev.C
3
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
VGS = 4.5V
15
PULSE DURATION = Xµs
DUTY CYCLE = X%MAX
10
VGS = 4V
5
VGS = 3.5V
0
0
1
2
3
VGS = 3.5V
3.5
3.0
VGS = 4V
2.5
VGS = 4.5V
2.0
VGS = 6V
1.5
1.0
VGS = 10V
0.5
4
0
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
15
20
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
2.2
300
ID = 4.3A
VGS = 10V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT(A)
Figure 1. On Region Characteristics
2
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
IS, REVERSE DRAIN CURRENT (A)
15
VDS = 5V
10
TJ = 150oC
TJ = 25oC
5
TJ = -55oC
0
5
4
VGS, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
4
TJ = 25oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
3
TJ = 125oC
100
20
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID = 4.3A
200
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
10
VGS = 0V
1
TJ = 150oC
0.1
TJ = -55oC
0.01
0.001
0.0
6
TJ = 25oC
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
FDD3510H Rev.C
4
1.2
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
1000
ID = 4.3A
Ciss
8
VDD = 40V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = 30V
VDD = 50V
4
100
Coss
2
f = 1MHz
VGS = 0V
0
0
2
4
6
8
10
12
10
0.1
14
Figure 7. Gate Charge Characteristics
10
100
Figure 8. Capacitance vs Drain
to Source Voltage
15
5
4
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
3
TJ = 25oC
2
TJ = 125oC
12
VGS = 10V
9
VGS = 6V
6
3
o
RθJC = 3.5 C/W
1
0.01
0.1
1
0
25
10
50
150
5
P(PK), PEAK TRANSIENT POWER (W)
10
10
100us
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.5oC/W
0.1
TC = 25oC
1
10
1ms
10ms
100ms
DC
100
VDS, DRAIN to SOURCE VOLTAGE (V)
VGS = 10V
4
10
3
SINGLE PULSE
RθJC = 3.5oC/W
10
TC = 25oC
2
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
FDD3510H Rev.C
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
50
0.05
0.5
100
o
Figure 9. Unclamped Inductive
Switching Capability
1
75
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
ID, DRAIN CURRENT (A)
Crss
Figure 12. Single Pulse Maximum
Power Dissipation
5
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
1
NORMALIZED THERMAL
IMPEDANCE, ZθJC
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC = 3.5 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 96 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Transient Thermal Response Curve
FDD3510H Rev.C
6
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2.5
VGS = -4.5V
VGS = -10V
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
8
VGS = -3.5V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
6
4
VGS = -3V
2
VGS = -2.5V
0
0
1
2
3
4
VGS = -2.5V
VGS = -3V
2.0
VGS = -3.5V
1.5
VGS = -4.5V
1.0
0.5
5
0
2
-VDS, DRAIN TO SOURCE VOLTAGE (V)
8
10
600
ID = -2.8A
VGS = -10V
1.8
rDS(on), DRAIN TO
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
2.0
ID = -2.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
500
400
TJ = 125oC
300
200
TJ = 25oC
100
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
10
-IS, REVERSE DRAIN CURRENT (A)
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
4
6
-ID, DRAIN CURRENT(A)
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. On- Region Characteristics
8
VDS = -5V
6
4
TJ = 150oC
2
TJ = 25oC
TJ = -55oC
0
1
2
3
4
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
0.01
TJ = -55oC
0.001
0.0
5
-VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
FDD3510H Rev.C
VGS = -10V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
7
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted
1000
ID = -2.8A
Ciss
8
VDD = -40V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = -30V
VDD = -50V
4
100
2
f = 1MHz
VGS = 0V
0
0
2
4
6
8
10
12
14
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
10
-ID, DRAIN CURRENT (A)
4
3
TJ =
25oC
2
TJ = 125oC
8
VGS = -10V
6
VGS = -4.5V
4
2
o
RθJC = 3.9 C/W
1
0.1
1
0
25
10
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
Figure 24. Maximum Continuous Drain
Current vs Case Temperature
Figure 23. Unclamped Inductive
Switching Capability
20000
P(PK), PEAK TRANSIENT POWER (W)
20
10000
10
-ID, DRAIN CURRENT (A)
Crss
10
0.1
16
Qg, GATE CHARGE(nC)
-IAS, AVALANCHE CURRENT(A)
Coss
100us
1ms
1 THIS AREA IS
LIMITED BY rds(on)
10ms
SINGLE PULSE
TJ = MAX RATED
100ms
o
RθJC = 3.9 C/W
0.1
DC
TC = 25oC
0.05
1
10
100
200
-VDS, DRAIN to SOURCE VOLTAGE (V)
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
SINGLE PULSE
X –o Tx
RθJC = ------------------3.9 C/W
I = I25
125
1000
TX = 25oC
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (s)
Figure 25. Forward Bias Safe
Operating Area
FDD3510H Rev.C
VGS = -10V
Figure 26. Single Pulse Maximum Power
Dissipation
8
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
o
RθJC = 3.9 C/W
0.001
-6
10
-5
-4
10
-3
10
-2
10
-1
10
10
1
t, RECTANGULAR PULSE DURATION (s)
Figure 27. Transient Thermal Response Curve
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
SINGLE PULSE
t2
o
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
RθJA = 96 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 28. Transient Thermal Response Curve
FDD3510H Rev.C
9
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
Preliminary Datasheet
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Rev. I34
FDD3510H Rev.C
10
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FDD3510H Dual N & P-Channel PowerTrench® MOSFET
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