FAIRCHILD FDD8426H

FDD8426H
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
Features
General Description
Q1: N-Channel
These dual N and P-Channel enhancement mode Power
„ Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
MOSFETs are produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
„ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A
tailored to minimize on-state resistance and yet maintain
Q2: P-Channel
superior switching performance.
„ Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A
Applications
„ Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A
„ Inverter
„ 100% UIL Tested
„ H-Bridge
„ RoHS Compliant
D1
D2
D1/D2
G1
G2
G2
S2
G1
S1
S1
N-Channel
Dual DPAK 4L
S2
P-Channel
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Q1
40
Q2
-40
Units
V
VGS
Gate to Source Voltage
±20
±20
V
Drain Current - Continuous (Package Limited)
17
-17
ID
- Continuous (Silicon Limited)
TC = 25°C
56
-48
- Continuous
TA = 25°C
12
-10
40
-40
- Pulsed
Power Dissipation for Single Operation
TC = 25°C
PD
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1)
56
65
TA = 25°C (Note 1a)
3.1
TA = 25°C (Note 1b)
1.3
(Note 3)
A
112
W
162
-55 to +150
mJ
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q1
(Note 1)
1.4
RθJC
Thermal Resistance, Junction to Case, Single Operation for Q2
(Note 1)
1.4
°C/W
Package Marking and Ordering Information
Device Marking
FDD8426H
Device
FDD8426H
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
Package
TO-252-4L
1
Reel Size
13”
Tape Width
12mm
Quantity
2500units
www.fairchildsemi.com
FDD8426H Dual N & P-Channel PowerTrench® MOSFET
September 2009
Symbol
Parameter
Test Conditions
Type
Min
40
-40
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
Q1
Q2
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 32 V, VGS = 0 V
VDS = -32 V, VGS = 0 V
Q1
Q2
1
-1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
Q1
Q2
±100
±100
nA
nA
3.0
-3.0
V
V
35
-32
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
VGS = VDS, ID = -250 µA
Q1
Q2
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
Q1
Q2
-6
6
VGS = 10 V, ID = 12 A
VGS = 4.5 V, ID = 11 A
VGS = 10 V, ID = 12 A, TJ = 125 °C
Q1
9.3
11
14
12
15
22
VGS = -10 V, ID = -10 A
VGS = -4.5 V , ID = -8.3 A
VGS = -10 V, ID = -10 A, TJ = 125 °C
Q2
13
19
19
17
27
30
VDD = 5 V, ID = 12 A
VDD = -5 V, ID = -10 A
Q1
Q2
53
31
Q1
VDS = 20 V, VGS = 0 V, f = 1MHZ
Q1
Q2
2055
1900
2735
2650
pF
Q1
Q2
255
330
335
440
pF
Q1
Q2
165
200
245
300
pF
Q1
Q2
1.1
3.3
Q1
Q2
9.7
9.7
20
20
ns
Q1
Q2
4.9
6.9
10
14
ns
Q2
VDD = -20 V, ID = -10 A,
VGS = -10 V, RGEN = 6 Ω
Q1
Q2
27
32
43
51
ns
Q1
Q2
3.7
7.5
10
15
ns
VGS = 0 V to 10 V Q1
VGS = 0 V to -10 V V = 20 V,
DD
VGS = 0 V to 5 V
ID = 12 A
VGS = 0 V to -5 V
Q2
VDD = -20 V,
ID = -10 A
Q1
Q2
38
37
53
52
nC
Q1
Q2
20
20
28
28
nC
Q1
Q2
6.3
6.6
nC
Q1
Q2
7.1
8
nC
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.5
-1.5
2
2
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q2
VDS = -20 V, VGS = 0 V, f = 1MHZ
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
Q1
VDD = 20 V, ID = 12 A,
VGS = 10 V, RGEN = 6 Ω
2
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
-0.8
1.2
-1.2
V
Q1
Q2
22
25
35
40
ns
Q1
Q2
11
14
20
22
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 12 A
VGS = 0 V, IS = -10 A
Q1
IF = 12 A, di/dt = 100 A/µs
Q2
IF = -10 A, di/dt = 100 A/µs
(Note 2)
(Note 2)
Notes:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
Q1
a. 40 °C/W when mounted on
a 1 in2 pad of 2 oz copper
Q2
a. 40 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper
b. 96 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, N-ch: L = 1 mH, IAS = 15 A, VDD =36 V, VGS = 10 V; P-ch: L = 1 mH, IAS = -18 A, VDD = -36 V, VGS = -10 V.
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
3
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
40
2.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
ID, DRAIN CURRENT (A)
VGS = 6 V
30
VGS = 4.5 V
20
VGS = 4 V
VGS = 3.5 V
10
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.0
0.5
1.0
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
2.0
1.5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 10 V
0.5
2.0
0
10
20
30
40
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.8
300
ID = 12 A
VGS = 10 V
rDS(on), DRAIN TO
1.5
1.2
0.9
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 6 V
VGS = 4.5 V
VGS = 4 V
1.0
Figure 1. On Region Characteristics
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID = 12 A
200
TJ = 125 oC
100
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
40
IS, REVERSE DRAIN CURRENT (A)
40
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 3.5 V
30
VDS = 5 V
TJ =
150 oC
20
TJ = 25 oC
10
TJ = -55 oC
0
1
2
3
TJ = 150 oC
1
0.1
TJ = 25 oC
0.01
TJ = -55 oC
0.001
0.2
4
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
VGS = 0 V
10
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
4
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
5000
ID = 12 A
VDD = 10 V
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 20 V
6
VDD = 30 V
4
1000
Coss
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
40
Figure 7. Gate Charge Characteristics
40
80
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
20
10
TJ = 25
TJ
oC
= 125 oC
60
VGS = 10 V
40
VGS = 4.5 V
20
TJ = 150 oC
1
0.01
0.1
1
o
RθJC = 1.4 C/W
10
0
25
100
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
1000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100 us
10
THIS AREA IS
LIMITED BY rDS(on)
1
Crss
100
0.1
1 ms
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RθJC = 1.4 oC/W
1s
TC = 25 oC
0.1
0.1
1
10
100 200
TC = 25 oC
100
50
-4
10
-3
10
-2
-1
10
10
t, PULSE WIDTH (sec)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
SINGLE PULSE
RθJC = 1.4 oC/W
Figure 12. Single Pulse Maximum
Power Dissipation
5
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJC
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJc + TC
SINGLE PULSE
o
RθJC = 1.4 C/W
0.001
-4
10
-3
-2
10
-1
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P DM
t1
0.001
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 96 C/W
(Note 1b)
0.0001
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
6
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
3.0
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10 V
30
VGS = -6 V
VGS = -4.5 V
20
VGS = -4 V
10
VGS = -3.5 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -4.5 V
1.5
VGS = -6 V
1.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = -10 V
0.5
0
10
20
-ID, DRAIN CURRENT (A)
30
40
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.8
80
ID = -10 A
VGS = -10 V
rDS(on), DRAIN TO
1.5
1.2
0.9
0.6
-75
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -4 V
2.0
4
Figure 15. On- Region Characteristics
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
60
ID = -10 A
40
TJ = 125 oC
20
TJ = 25 oC
0
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On-Resistance
vs Junction Temperature
40
-IS, REVERSE DRAIN CURRENT (A)
40
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
-ID, DRAIN CURRENT (A)
VGS = -3.5 V
2.5
30
VDS = -5 V
20
TJ = 150 oC
10
TJ = 25 oC
TJ = -55 oC
0
1.5
2.0
2.5
3.0
3.5
4.0
TJ = 150 oC
TJ = 25 oC
1
TJ = -55 oC
0.1
0.01
0.2
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 19. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
VGS = 0 V
10
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
7
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
5000
ID = -10 A
Ciss
8
VDD = -10 V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = -20 V
4
VDD = -30 V
1000
Coss
2
f = 1 MHz
VGS = 0 V
0
0
10
20
30
100
0.1
40
-ID, DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT (A)
40
60
20
10
TJ = 25 oC
TJ = 125 oC
VGS = -10 V
40
VGS = -4.5 V
20
o
RθJC = 1.4 C/W
TJ = 150 oC
1
0.01
0.1
1
10
100
0
25
500
50
75
100
125
150
o
TC, CASE TEMPERATURE ( C)
tAV, TIME IN AVALANCHE (ms)
Figure 24. Maximum Continuous Drain
Current vs Case Temperature
Figure 23. Unclamped Inductive
Switching Capability
1000
P(PK), PEAK TRANSIENT POWER (W)
100
-ID, DRAIN CURRENT (A)
10
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
100 us
10
1 ms
THIS AREA IS
LIMITED BY rds(on)
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
RθJC = 1.4 oC/W
1s
TC = 25 oC
0.1
0.1
1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
1
Crss
1
10
100 200
o
RθJC = 1.4 C/W
100
50
-4
10
-3
10
-2
10
-1
10
t, PULSE WIDTH (sec)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
SINGLE PULSE
Figure 26. Single Pulse Maximum Power
Dissipation
8
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25°C unless otherwise noted
FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJC
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.1
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
o
RθJC = 1.4 C/W
0.05
-4
10
-3
-2
10
-1
10
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 27. Junction-to-Case Transient Thermal Response Curve
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
0.01
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.001
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 96 C/W
(Note 1b)
0.0001
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 28. Junction-to-Ambient Transient Thermal Response Curve
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
9
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
10
www.fairchildsemi.com
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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THEREIN, WHICH COVERS THESE PRODUCTS.
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2.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I41
©2009 Fairchild Semiconductor Corporation
FDD8426H Rev.C
11
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
AccuPower™
FPS™
The Power Franchise®
PowerXS™
Auto-SPM™
F-PFS™
®
®
Programmable Active Droop™
Build it Now™
FRFET
SM
®
QFET
Global Power Resource
CorePLUS™
TinyBoost™
Green FPS™
QS™
CorePOWER™
TinyBuck™
Green FPS™ e-Series™
Quiet Series™
CROSSVOLT™
TinyCalc™
Gmax™
RapidConfigure™
CTL™
TinyLogic®
GTO™
Current Transfer Logic™
®
TINYOPTO™
IntelliMAX™
EcoSPARK
™
TinyPower™
EfficentMax™
Saving our world, 1mW /W /kW at a time™
ISOPLANAR™
TinyPWM™
EZSWITCH™*
SmartMax™
MegaBuck™
TinyWire™
™*
SMART START™
MICROCOUPLER™
®
TriFault Detect™
SPM
MicroFET™
TRUECURRENT™*
STEALTH™
MicroPak™
®
SuperFET™
MillerDrive™
®
Fairchild
SuperSOT™-3
MotionMax™
Fairchild Semiconductor®
SuperSOT™-6
UHC®
Motion-SPM™
®
FACT Quiet Series™
Ultra FRFET™
SuperSOT™-8
OPTOLOGIC
FACT®
OPTOPLANAR®
UniFET™
SupreMOS™
®
®
FAST
VCX™
SyncFET™
FastvCore™
VisualMax™
Sync-Lock™
FETBench™
XS™
®*
PDP
SPM™
®
FlashWriter *
Power-SPM™