FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ Features General Description Q1: N-Channel These dual N and P-Channel enhancement Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A MOSFETs are produced using Fairchild Semiconductor’s mode Power advanced PowerTrench- process that has been especially Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A tailored to minimize on-state resistance and yet maintain superior switching performance. Q2: P-Channel Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A Application Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A Inverter Fast switching speed H-Bridge Qualified to AEC Q101 RoHS Compliant D1 D2 D1/D2 G1 G2 S2 G1 S1 G2 S1 Dual DPAK 4L N-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter S2 P-Channel Drain to Source Voltage Q1 40 Q2 -40 Units V Gate to Source Voltage ±20 ±20 V Drain Current 20 -20 - Continuous (Package Limited) - Continuous (Silicon Limited) ID TC = 25°C TA = 25°C - Continuous - Pulsed Power Dissipation for Single Operation TC = 25°C (Note 1) 26 -20 9.0 -6.5 55 -40 30 TA = 25°C (Note 1a) PD TA = 25°C (Note 1b) Single Pulse Avalanche Energy EAS TJ, TSTG (Note 3) Operating and Storage Junction Temperature Range A 35 3.1 W 1.3 29 33 -55 to +150 mJ °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 4.1 RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.5 °C/W Package Marking and Ordering Information Device Marking FDD8424H Device FDD8424H_F085A ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 Package TO-252-4L 1 Reel Size 13” Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET October 2011 Symbol Parameter Test Conditions Type Min Q1 Q2 40 -40 Typ Max Units Off Characteristics ID = 250µA, VGS = 0V ID = -250µA, VGS = 0V BVDSS Drain to Source Breakdown Voltage ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V VDS = -32V, VGS = 0V IGSS Gate to Source Leakage Current ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C Q1 Q2 V 34 -32 mV/°C Q1 Q2 1 -1 µA VGS = ±20V, VDS = 0V Q1 Q2 ±100 ±100 nA nA VGS = VDS, ID = 250µA VGS = VDS, ID = -250µA Q1 Q2 3 -3 V On Characteristics VGS(th) Gate to Source Threshold Voltage ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1 -1 1.7 -1.6 Q1 Q2 -5.3 4.8 Q1 19 23 29 24 30 37 Q2 42 58 62 54 70 80 VDS = 5V, ID = 9.0A VDS = -5V, ID = -6.5A Q1 Q2 29 13 Q1 VDS = 20V, VGS = 0V, f = 1MHZ Q1 Q2 750 1000 1000 1330 pF Q1 Q2 115 140 155 185 pF Q1 Q2 75 75 115 115 pF Q1 Q2 1.1 3.3 Q1 Q2 7 7 14 14 ns Q1 Q2 13 3 24 10 ns Q1 Q2 17 20 31 36 ns Q1 Q2 6 3 12 10 ns Q1 Q2 14 17 20 24 nC Q1 Q2 2.3 3.0 nC Q1 Q2 3.2 3.6 nC ID = 250µA, referenced to 25°C ID = -250µA, referenced to 25°C VGS = 10V, ID = 9.0A VGS = 4.5V, ID = 7.0A VGS = 10V, ID = 9.0A, TJ = 125°C VGS = -10V, ID = -6.5A VGS = -4.5V, ID = -5.6A VGS = -10V, ID = -6.5A, TJ = 125°C mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Q2 VDS = -20V, VGS = 0V, f = 1MHZ f = 1MHz Ω Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 Q1 VDD = 20V, ID = 9.0A, VGS = 10V, RGEN = 6Ω Q2 VDD = -20V, ID = -6.5A, VGS = -10V, RGEN = 6Ω Q1 VGS = 10V, VDD = 20V, ID = 9.0A Q2 VGS = -10V, VDD = -20V, ID = -6.5A 2 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 9.0A VGS = 0V, IS = -6.5A Q1 IF = 9.0A, di/dt = 100A/s Q2 IF = -6.5A, di/dt = 100A/s (Note 2) (Note 2) Q1 Q2 0.87 0.88 1.2 -1.2 V Q1 Q2 25 29 38 44 ns Q1 Q2 19 29 29 44 nC Notes: 1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. Q1 b. 96°C/W when mounted on a minimum pad of 2 oz copper a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper Q2 b. 96°C/W when mounted on a minimum pad of 2 oz copper a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. Starting TJ = 25°C, N-ch: L = 0.3mH, IAS = 14A, VDD = 40V, VGS = 10V; P-ch: L = 0.3mH, IAS = -15A, VDD = -40V, VGS = -10V. ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 3 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3.0 VGS = 4.0V 50 ID, DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 60 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 40 VGS = 4.5V 30 VGS = 3.5V 20 10 VGS = 3.0V 0 0 1 2 3 VGS = 3.0V 2.5 2.0 VGS = 4.5V 1.5 1.0 VGS = 10V 0.5 4 0 10 rDS(on), DRAIN TO 1.2 1.0 0.8 -25 0 25 50 75 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 50 ID = 9A VGS = 10V -50 30 TJ = 25oC 10 0 1.5 TJ = -55oC 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 20 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 VGS = 0V 10 TJ = 150oC 1 TJ = 25oC 0.1 0.01 TJ = -55oC 0.001 0.0 4.5 0.3 0.6 0.9 1.2 1.5 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 25oC 60 VDS = 5V TJ = 150oC ID = 9A Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 20 60 30 o IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 40 50 TJ = 125oC 10 100 125 150 Figure 3. Normalized On -Resistance vs Junction Temperature 50 40 40 TJ, JUNCTION TEMPERATURE ( C) 60 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 0.6 -75 20 ID, DRAIN CURRENT(A) Figure 1. On- Region Characteristics 1.6 VGS = 4.0V VGS = 3.5V VDS, DRAIN TO SOURCE VOLTAGE (V) 1.8 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX Figure 6. Source to Drain Diode Forward Voltage vs Source Current 4 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 10 2000 VGS, GATE TO SOURCE VOLTAGE(V) ID = 9A CAPACITANCE (pF) 6 VDD = 20V VDD = 15V 4 VDD = 25V 2 0 Ciss 1000 8 Coss 100 f = 1MHz VGS = 0V 0 4 8 12 30 0.1 16 1 30 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC 10 TJ = 125oC 25 Limited by Package 20 VGS = 10V 15 10 VGS = 4.5V 5 1 0.001 0.01 0.1 1 10 0 25 100 o RθJC = 4.1 C/W 50 tAV, TIME IN AVALANCHE(ms) 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs Case Temperature 100 10000 P(PK), PEAK TRANSIENT POWER (W) 10us ID, DRAIN CURRENT (A) 40 Figure 8. Capacitance vs Drain to Source Voltage 30 100us 10 THIS AREA IS LIMITED BY rDS(on) 1 SINGLE PULSE TJ = MAX RATED o TC = 25oC 1 1ms 10ms DC RθJC = 4.1 C/W 0.1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics Crss 10 80 VDS, DRAIN to SOURCE VOLTAGE (V) ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 150 – T C -----------------------125 I = I25 TC = 25oC 100 SINGLE PULSE o 10 -5 10 RθJC = 4.1 C/W -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 12. Single Pulse Maximum Power Dissipation Figure 11. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 FOR TEMPERATURES VGS = 10V 5 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE RθJC = 4.1oC/W -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 6 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted VGS = -10V 30 3.0 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 40 VGS = -4.5V VGS = -4V 20 VGS = -3.5V 10 VGS = -3V 0 0 1 2 3 4 VGS = -3V 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX VGS = -3.5V 2.0 VGS = -4.5V 1.5 VGS = -10V 1.0 0.5 0 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) SOURCE ON-RESISTANCE (mΩ) rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 160 1.2 1.0 0.8 -50 TJ = 25oC -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 40 VDS = -5V 20 TJ = 25oC 10 1 TJ = -55oC 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 6 8 10 VGS = 0V 10 1 TJ = 25oC TJ 0.1 = 150oC TJ = -55oC 0.01 0.001 0.0 5 0.3 0.6 0.9 1.2 1.5 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 19. Source to Drain Diode Forward Voltage vs Source Current Figure 18. Transfer Characteristics ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 4 Figure 17. On-Resistance vs Gate to Source Voltage 30 0 2 -VGS, GATE TO SOURCE VOLTAGE (V) PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX TJ = 150oC TJ = 125oC 40 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = -6.5A 80 Figure 16. Normalized On-Resistance vs Junction Temperature 40 40 PULSE DURATION = 80µs DUTY CYCLE = 0.5%MAX 120 0.6 -75 30 Figure 15. Normalized on-Resistance vs Drain Current and Gate Voltage ID = -6.5A VGS = -10V 1.4 20 -ID, DRAIN CURRENT(A) Figure 14. On- Region Characteristics 1.6 VGS = -4V 8 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted 2000 ID = -6.5A 8 VDD = -15V VDD = -20V 6 VDD = -25V 4 2 0 Ciss 1000 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 10 Coss Crss 100 f = 1MHz VGS = 0V 0 4 8 12 16 30 0.1 20 1 Figure 21. Capacitance vs Drain to Source Voltage Figure 20. Gate Charge Characteristics 25 10 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) 30 TJ = 25oC TJ = 125oC 20 VGS = -10V 15 10 VGS = -4.5V 5 o 1 0.001 RθJC = 3.5 C/W 0.01 0.1 1 10 0 100 tAV, TIME IN AVALANCHE(ms) 50 75 100 125 150 o Figure 23. Maximum Continuous Drain Current vs Case Temperature 100 10000 P(PK), PEAK TRANSIENT POWER (W) 10us 100us 10 THIS AREA IS LIMITED BY rds(on) 1 SINGLE PULSE TJ = MAX RATED RθJC = 3.5oC/W 0.1 25 TC, CASE TEMPERATURE ( C) Figure 22. Unclamped Inductive Switching Capability -ID, DRAIN CURRENT (A) 40 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) TC = 25oC 1 10 1ms 10ms DC 80 -VDS, DRAIN to SOURCE VOLTAGE (V) FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 150 – T C -----------------------125 I = I25 TC = 25oC 100 SINGLE PULSE o 10 -5 10 RθJC = 3.5 C/W -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t, PULSE WIDTH (s) Figure 24. Forward Bias Safe Operating Area ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 VGS = -10V Figure 25. Single Pulse Maximum Power Dissipation 9 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJC 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -5 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE o RθJC = 3.5 C/W -4 10 -3 -2 10 10 -1 10 0 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 26. Transient Thermal Response Curve ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 10 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 11 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I55 ©2011 Fairchild Semiconductor Corporation FDD8424H_F085A Rev.B1 www.fairchildsemi.com FDD8424H_F085A Dual N & P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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