TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 80-mW DIRECTPATH™ STEREO HEADPHONE DRIVER FEATURES 16 18 17 20 19 17 16 18 20 • Space Saving Packages – 20-Pin, 4 mm × 4 mm Thin QFN – TPA4411 – Thermally Optimized PowerPAD™ Package – TPA4411M – Thermally Enhanced PowerPAD™ Package – 16-Ball, 2.18 mm × 2.18 mm WCSP • Ground-Referenced Outputs Eliminate DC-Bias Voltages on Headphone Ground Pin – No Output DC-Blocking Capacitors – Reduced Board Area – Reduced Component Cost – Improved THD+N Performance – No Degradation of Low-Frequency Response Due to Output Capacitors • Wide Power Supply Range: 1.8 V to 4.5 V • 80-mW/Ch Output Power into 16-Ω at 4.5 V • Independent Right and Left Channel Shutdown Control • Short-Circuit and Thermal Protection • Pop Reduction Circuitry 19 1 2 APPLICATIONS • • • • • Notebook Computers CD / MP3 Players Smart Phones Cellular Phones PDAs 4 12 5 11 5 11 6 TPA4411RTJ TPA4411MRTJ A2 A3 A4 INR SGND PVDD C1P B1 SDR SDL NC PGND C1 INL OUTR NC C1N D1 SVDD OUTL SVSS PVSS A1 10 12 8 13 4 9 3 7 13 10 14 3 9 15 2 8 1 14 6 15 2 7 1 TPA4411YZH DESCRIPTION The TPA4411 and TPA4411M are stereo headphone drivers designed to allow the removal of the output DC-blocking capacitors for reduced component count and cost. The TPA4411 and TPA4411M are ideal for small portable electronics where size and cost are critical design parameters. The TPA4411 and TPA4411M are capable of driving 80 mW into a 16-Ω load at 4.5 V. Both TPA4411 and TPA4411M have a fixed gain of –1.5 V/V and headphone outputs that have ±8-kV IEC ESD protection. The TPA4411 and TPA4411M have independent shutdown control for the right and left audio channels. The TPA4411 is available in a 2.18 mm × 2.18 mm WCSP and 4 mm × 4 mm Thin QFN packages. The TPA4411M is available in a 4 mm × 4 mm Thin QFN package. The TPA4411RTJ package is a thermally optimized PowerPAD™ package allowing the maximum amount of thermal dissipation and the TPA4411MRTJ is a thermally enhanced PowerPAD package designed to match competitive package footprints. 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PowerPAD, DirectPath are trademarks of Texas Instruments. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2004–2008, Texas Instruments Incorporated TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. PVSS 5 PVDD SDL SGND NC 18 17 16 C1N 3 13 INL 12 NC NC 4 12 NC 11 OUTR PVSS 5 11 OUTR TPA4411RTJ 10 INL SVDD SDR 9 14 OUTL 2 NC PGND 8 INR 6 15 NC NC 19 NC 16 4 10 NC SVDD 13 1 7 SGND 17 3 9 C1N OUTL SDR C1P SVSS SDL 18 14 8 2 NC PGND NC PVDD 19 INR 7 15 SVSS 1 6 C1P 20 NC 20 RTJ (QFN) PACKAGE (TOP VIEW) TPA4411MRTJ NC − No internal connection NC − No internal connection YZH (WCSP) PACKAGE (TOP VIEW) A2 A3 A4 A1 INR SGND PVDD C1P B1 SDR SDL NC PGND C1 INL OUTR NC C1N D1 SVDD OUTL SVSS PVSS TPA4411YZH NC - No internal connection 2 Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 TERMINAL FUNCTIONS TERMINAL NAME I/O DESCRIPTION QFN WCSP C1P 1 A4 PGND 2 B4 C1N 3 C4 NC 4, 6, 8, 12, 16, 20 B3, C3 PVSS 5 D4 O Output from charge pump. SVSS 7 D3 I Amplifier negative supply, connect to PVSS via star connection. OUTL 9 D2 O Left audio channel output signal SVDD 10 D1 I Amplifier positive supply, connect to PVDD via star connection. OUTR 11 C2 O Right audio channel output signal INL 13 C1 I Left audio channel input signal SDR 14 B1 I Right channel shutdown, active low logic. INR 15 A1 I Right audio channel input signal SGND 17 A2 I Signal ground, connect to ground. SDL 18 B2 I Left channel shutdown, active low logic. PVDD 19 A3 I Supply voltage, connect to positive supply. Exposed Pad I/O Charge pump flying capacitor positive terminal I Power ground, connect to ground. I/O Charge pump flying capacitor negative terminal No connection - Exposed pad must be soldered to a floating plane. Do NOT connect to power or ground. ABSOLUTE MAXIMUM RATINGS (1) over operating free-air temperature range, TA = 25°C (unless otherwise noted) VALUE / UNIT Supply voltage, AVDD, PVDD VI –0.3 V to 5.5 V Input voltage –0.3 V to VDD + 0.3 V Output Continuous total power dissipation See Dissipation Rating Table TA Operating free-air temperature range –40°C to 85°C TJ Operating junction temperature range –40°C to 150°C Tstg Storage temperature range –65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds (1) 260°C Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 3 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 DISSIPATION RATINGS TABLE PACKAGE TA ≤ 25°C POWER RATING DERATING FACTOR (1) TA = 70°C POWER RATING TA = 85°C POWER RATING RTJ (TPA4411) 5200 mW 41.6 mW/°C 3120 mW 2700 mW RTJ (TPA4411M) 3450 mW 34.5 mW/°C 1898 mW 1380 mW YZH 1200 mW 9.21 mW/°C 690 mW 600 mW (1) Derating factor measured with High K board. AVAILABLE OPTIONS PACKAGED DEVICES (1) PART NUMBER SYMBOL 20-pin, 4 mm × 4 mm QFN TPA4411RTJ (2) AKQ 20-pin, 4 mm × 4 mm QFN TPA4411MRTJ (2) BPB 16-ball, 2.18 mm × 2.18 mm WSCP TPA4411YZH AKT TA –40°C to 85°C (1) (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. The RTJ package is only available taped and reeled. To order, add the suffix “R” to the end of the part number for a reel of 3000, or add the suffix “T” to the end of the part number for a reel of 250 (e.g., TPA4411RTJR). RECOMMENDED OPERATING CONDITIONS MIN MAX UNIT Supply voltage, AVDD, PVDD 1.8 4.5 (1) V VIH High-level input voltage SDL, SDR 1.5 VIL Low-level input voltage SDL, SDR TA Operating free-air temperature (1) V 0.5 V –40 85 °C TYP MAX Device can shut down for VDD > 4.5 V to prevent damage to the device. ELECTRICAL CHARACTERISTICS TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN Output offset voltage VDD = 1.8 V to 4.5 V, Inputs grounded PSRR Power Supply Rejection Ratio VDD = 1.8 V to 4.5 V –69 VOH High-level output voltage VDD = 3 V, RL = 16 Ω 2.2 VOL Low-level output voltage VDD = 3 V, RL = 16 Ω –1.1 V |IIH| High-level input current (SDL, SDR) VDD = 4.5 V, VI = VDD 1 µA |IIL| Low-level input current (SDL, SDR) VDD = 4.5 V, VI = 0 V 1 µA IDD Supply Current –80 mV dB V VDD = 1.8 V, No load, SDL= SDR = VDD 5.3 6.5 VDD = 3 V, No load, SDL = SDR = VDD 6.5 8.0 VDD = 4.5 V, No load, SDL = SDR = VDD 8.0 10.0 Shutdown mode, VDD = 1.8 V to 4.5 V 4 8 UNIT |VOS| 1 mA µA Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 OPERATING CHARACTERISTICS VDD = 3 V , TA = 25°C, RL = 16 Ω (unless otherwise noted) PARAMETER TEST CONDITIONS MIN THD = 1%, VDD = 3 V, f = 1 kHz PO 100 THD = 1%, VDD = 3 V, f = 1 kHz, RL = 32 Ω THD+N Total harmonic distortion plus noise Crosstallk kSVR Supply ripple rejection ratio Av Closed-loop voltage gain ΔAv Gain matching PO = 25 mW, f = 1 kHz 0.054% PO = 25 mW, f = 20 kHz 0.010% PO = 20 mW, f = 1 kHz –82.5 200-mVpp ripple, f = 1 kHz –70.4 dB dB –45.1 –1.5 –1.55 V/V 1% Slew rate 2.2 Maximum capacitive load 400 pF 10 µVRMS Noise output voltage OUTR, OUTL Charge pump switching frequency V/µs ±8 280 Start-up time from shutdown 320 kV 420 kHz 18 kΩ 450 Input impedance SNR mW –83 200-mVpp ripple, f = 217 Hz –1.45 Electrostatic discharge, IEC fosc UNIT 50 200-mVpp ripple, f = 20 kHz Vn MAX 50 THD = 1%, VDD = 4.5 V, f = 1 kHz Output power (Outputs In Phase) TYP 12 Signal-to-noise ratio Po = 40 mW (THD+N = 0.1%) Threshold Thermal shutdown Hysteresis Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 15 µs 98 150 dB 170 15 °C °C 5 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 Functional Block Diagram TPA4411 SVDD Audio In − R _ Audio Out − R + Short Circuit Protection SVSS SVDD SGND + _ Audio In − L Audio Out − L SVSS C1P Av = −1.5 V/V Charge Pump Bias Circuitry SDx C1N PVSS APPLICATION CIRCUIT TLV320AIC26 or TLV320AIC28 HPL or SPK1 TPA2012D2 HPR or SPK2 Shutdown Control SDL SDR PGND SGND TPA4411 OUTL INR OUTR INL 1.8 − 4.5 V PVSS SVSS PVDD SVDD C1P 6 C1N Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 TYPICAL CHARACTERISTICS C(PUMP) = C(PVSS) = 2.2 µF , CIN = 1 µF (unless otherwise noted) Table of Graphs FIGURE Total harmonic distortion + noise vs Output power 1–24 Total harmonic distortion + noise vs Frequency 25–32 Supply voltage rejection ratio vs Frequency 33, 34 Power dissipation vs Output power 35–42 Crosstalk vs Frequency 43–46 Output power vs Supply voltage 47–50 Quiescent supply current vs Supply voltage 51 Output power vs Load resistance 5–60 Output spectrum 61 Gain and phase vs Frequency VDD = 1.8 V, RL = 16 Ω, fIN = 20 Hz 10 In Phase 1 Single Channel 0.1 0.01 180° Out of Phase 0.001 1 10 30 100 VDD = 1.8 V, RL = 16 Ω, fIN = 1 kHz 180° Out of Phase 10 1 In Phase 0.1 Single Channel 0.01 1 10 30 100 VDD = 1.8 V, RL = 16 Ω, fIN = 10 kHz In Phase 10 180° Out of Phase 1 0.1 Single Channel 0.01 1 10 30 PO − Output Power − mW PO − Output Power − mW Figure 2. Figure 3. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 1.8 V, RL = 32 Ω, fIN = 20 Hz 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 1 10 30 100 VDD = 1.8 V, RL = 32 Ω, fIN = 1 kHz In Phase 10 180° Out of Phase Single Channel 1 0.1 0.01 1 10 30 PO − Output Power − mW PO − Output Power − mW Figure 4. Figure 5. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M THD+N − Total Harmonic Distortion + Noise − % Figure 1. THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % PO − Output Power − mW TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % 100 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 62, 63 100 VDD = 1.8 V, RL = 32 Ω, fIN = 10 kHz In Phase 10 180° Out of Phase 1 Single Channel 0.1 0.01 1 10 PO − Output Power − mW 30 Figure 6. 7 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 10 In Phase 1 0.1 180° Out of Phase 0.01 Single Channel 0.001 1 10 100 PO − Output Power − mW 100 VDD = 3 V, RL = 16 Ω, fIN = 1 kHz In Phase 10 1 180° Out of Phase 0.1 Single Channel 0.01 1 10 100 PO − Output Power − mW 300 100 VDD = 3 V, RL = 16 Ω, fIN = 10 kHz In Phase 10 1 180° Out of Phase 0.1 Single Channel 0.01 1 10 100 300 PO − Output Power − mW Figure 9. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 3 V, RL = 32 Ω, fIN = 20 Hz 10 In Phase 180° Out of Phase 1 0.1 Single Channel 0.01 0.001 1 10 100 PO − Output Power − mW 300 100 VDD = 3 V, RL = 32 Ω, fIN = 1 kHz In Phase 10 Single Channel 1 180° Out of Phase 0.1 0.01 1 10 100 300 THD+N − Total Harmonic Distortion + Noise − % Figure 8. THD+N − Total Harmonic Distortion + Noise − % Figure 7. 100 VDD = 3 V, RL = 32 Ω, fIN = 10 kHz 10 In Phase 1 0.1 Single Channel 0.01 180° Out of Phase 0.001 1 PO − Output Power − mW 10 100 300 PO − Output Power − mW Figure 11. Figure 12. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 3.6 V, RL = 16 Ω, fIN = 20 Hz 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 1 10 100 Figure 13. 300 100 VDD = 3.6 V, RL = 16 Ω, fIN = 1 kHz 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 1 10 100 300 PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % Figure 10. PO − Output Power − mW 8 300 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % VDD = 3 V, RL = 16 Ω, fIN = 20 Hz THD+N − Total Harmonic Distortion + Noise − % 100 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 3.6 V, RL = 16 Ω, fIN = 10 kHz 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 1 10 100 300 PO − Output Power − mW Figure 14. Figure 15. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 VDD = 3.6 V, RL = 32 Ω, fIN = 20 Hz 10 In Phase 180° Out of Phase 1 0.1 Single Channel 0.01 0.001 1 10 100 300 100 VDD = 3.6 V, RL = 32 Ω, fIN = 1 kHz 10 180° Out of Phase 1 0.1 Single Channel 0.01 1 10 100 300 100 VDD = 3.6 V, RL = 32 Ω, fIN = 10 kHz 10 In Phase 180° Out of Phase 1 0.1 0.01 Single Channel 0.001 1 PO − Output Power − mW 10 100 300 PO − Output Power − mW Figure 17. Figure 18. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 4.5 V, RL = 16 Ω, fIN = 20 Hz 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 1 10 100 300 100 VDD = 4.5 V, RL = 16 Ω, fIN = 1 k Hz In Phase 10 180° Out of Phase 1 Single Channel 0.1 0.01 1 PO − Output Power − mW 10 100 300 THD+N − Total Harmonic Distortion + Noise − % Figure 16. THD+N − Total Harmonic Distortion + Noise − % 100 VDD = 4.5 V, RL = 16 Ω, fIN = 10 k Hz In Phase 10 180° Out of Phase 1 0.1 Single Channel 0.01 1 100 10 300 PO − Output Power − mW PO − Output Power − mW Figure 20. Figure 21. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 4.5 V, RL = 32 Ω, fIN = 20 Hz 10 In Phase 1 Single Channel 0.1 180° Out of Phase 0.01 0.001 1 10 100 300 THD+N − Total Harmonic Distortion + Noise − % Figure 19. PO − Output Power − mW 100 VDD = 4.5 V, RL = 32 Ω, fIN = 1 kHz In Phase 10 1 180° Out of Phase Single Channel 0.1 0.01 1 10 100 300 PO − Output Power − mW Figure 22. Figure 23. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % In Phase TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % 100 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 VDD = 4.5 V, RL = 32 Ω, fIN = 10 kHz 10 In Phase 1 180° Out of Phase 0.1 0.01 1 Single Channel 10 100 300 PO − Output Power − mW Figure 24. 9 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 VDD = 1.8 V RL = 16 Ω PO = 1 mW 0.1 PO = 3 mW 0.01 PO = 2 mW 0.001 10 100 1k 10 k 100 k 1 VDD = 1.8 V RL = 32 Ω PO = 6 mW 0.01 PO = 5 mW 0.001 10 1k 10 k 100 k VDD = 3 V RL = 16 Ω PO = 5 mW 0.1 PO = 40 mW PO = 25 mW 0.01 0.001 10 100 1k 10 k 100 k f − Frequency − Hz Figure 26. Figure 27. TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 1 VDD = 3 V RL = 32 Ω PO = 5 mW PO = 25 mW 0.1 0.01 PO = 45 mW 0.001 10 100 1k 10 k 100 k 1 VDD = 3.6 V RL = 16 Ω PO = 5 mW PO = 40 mW 0.1 0.01 PO = 20 mW 0.001 10 100 1k 10 k 100 k f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % Figure 25. THD+N − Total Harmonic Distortion + Noise − % 1 VDD = 3.6 V RL = 32 Ω PO = 5 mW PO = 35 mW 0.1 PO = 70 mW 0.01 0.001 10 100 1k 10 k Figure 29. Figure 30. TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY SUPPLY VOLTAGE REJECTION RATIO vs FREQUENCY VDD = 4.5 V RL = 16 Ω PO = 50 mW PO = 35 mW 0.1 0.01 PO = 25 mW PO = 5 mW 0.001 10 100 1k 10 k f − Frequency − Hz Figure 31. 100 k THD+N − Total Harmonic Distortion + Noise − % Figure 28. 1 1 VDD = 4.5 V RL = 32 Ω PO = 5 mW 0.1 PO = 80 mW PO = 25 mW 0.01 PO = 50 mW 0.001 10 100 1k 10 k 100 k f − Frequency − Hz k SVR − Supply Voltage Rejection Ratio − V THD+N − Total Harmonic Distortion + Noise − % 100 1 f − Frequency − Hz f − Frequency − Hz THD+N − Total Harmonic Distortion + Noise − % PO = 2 mW 0.1 f − Frequency − Hz 10 TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY THD+N − Total Harmonic Distortion + Noise − % 1 TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 100 k 0 −10 RL = 16 Ω −20 −30 3V −40 4.5 V −50 −60 −70 1.8 V 3.6 V −80 −90 −100 10 100 1k 10 k 100 k f − Frequency − Hz f − Frequency − Hz Figure 32. Figure 33. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 −20 −30 −40 −50 −60 3V −70 1.8 V 4.5 V −80 −90 3.6 V −100 10 60 80 RL = 32 Ω −10 POWER DISSIPATION vs OUTPUT POWER 100 70 10 k In Phase 60 180° Out of Phase 50 40 30 20 VDD = 1.8 V, RL = 16 Ω 10 0 1k P D − Power Dissipation − mW 0 POWER DISSIPATION vs OUTPUT POWER P D − Power Dissipation − mW k SVR − Supply Voltage Rejection Ratio − V SUPPLY VOLTAGE REJECTION RATIO vs FREQUENCY 100 k 0 5 10 15 20 25 40 180° Out of Phase 30 20 VDD = 1.8 V, RL = 32 Ω 10 0 30 In Phase 50 0 5 10 Figure 36. POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER 400 250 200 180° Out of Phase 150 100 VDD = 3 V, RL = 16 Ω 50 140 120 P D − Power Dissipation − mW In Phase P D − Power Dissipation − mW 180° Out of Phase 100 80 60 40 VDD = 3 V, RL = 32 Ω 20 50 100 150 200 0 In Phase 300 180° Out of Phase 250 200 150 100 VDD = 3.6 V, RL = 16 Ω 50 100 150 0 200 50 100 150 200 250 PO − Output Power − mW PO − Output Power − mW PO − Output Power − mW Figure 37. Figure 38. Figure 39. POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER POWER DISSIPATION vs OUTPUT POWER 250 350 600 PD − Power Dissipation − mW In Phase 200 150 180° Out of Phase 100 50 VDD = 3.6 V, RL = 32 Ω 0 VDD = 4.5 V, RL = 16 Ω 500 In Phase 400 180° Out of Phase 300 200 100 100 150 200 250 300 350 VDD = 4.5 V, RL = 32 Ω 300 250 300 In Phase 180° Out of Phase 200 150 100 50 0 0 50 40 0 0 0 35 350 50 P D − Power Dissipation − mW P D − Power Dissipation − mW 30 Figure 35. In Phase PD − Power Dissipation − mW 25 Figure 34. 160 0 20 PO − Output Power − mW 300 0 15 PO − Output Power − mW f − Frequency − Hz 0 50 100 150 200 PO − Output Power − mW PO − Output Power − mW Figure 40. Figure 41. 250 Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 0 50 100 150 200 250 PO − Output Power − mW 300 Figure 42. 11 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 CROSSTALK vs FREQUENCY CROSSTALK vs FREQUENCY 0 VDD = 3 V, PO = 1.6 mW RL = 16 Ω −20 −40 −60 Left to Right −80 −100 −120 10 −60 Left to Right −80 −100 Right to Left 1k 10 k 100 k 10 100 10 k 100 k OUTPUT POWER vs SUPPLY VOLTAGE OUTPUT POWER vs SUPPLY VOLTAGE THD = 10 % RL = 16 Ω 180° Out of Phase 80 60 In Phase 40 20 Right to Left 100 PO − Output Power − mW PO − Output Power − mW 100 −80 1k 10 k 200 180° Out of Phase 150 100 In Phase 50 0 0 100 k 100 k 250 THD = 1 % RL = 16 Ω Left to Right 1.8 f − Frequency − Hz 2.3 2.8 3.3 3.8 VDD − Supply Voltage − V 4.3 1.8 2.3 2.8 3.3 3.8 VDD − Supply Voltage − V 4.3 Figure 46. Figure 47. Figure 48. OUTPUT POWER vs SUPPLY VOLTAGE OUTPUT POWER vs SUPPLY VOLTAGE QUIESCENT SUPPLY CURRENT vs SUPPLY VOLTAGE 250 160 THD = 1 % RL = 32 Ω 10 180° Out of Phase 100 80 60 In Phase 40 I DD − Quiescent Supply Current − mA PO − Output Power − mW THD = 10 % RL = 32 Ω 120 200 180° Out of Phase 150 100 In Phase 50 20 2.3 2.8 3.3 3.8 VDD − Supply Voltage − V Figure 49. 4.3 9 8 7 6 5 4 3 2 1 0 0 1.8 10 k CROSSTALK vs FREQUENCY −60 −120 10 1k f − Frequency − Hz 120 −100 100 Figure 45. −40 Crosstalk − dB 1k Right to Left −120 10 Figure 44. VDD = 3.6 V, PO = 20 mW RL = 16 Ω −20 PO − Output Power − mW Left to Right −80 Figure 43. 0 12 −60 f − Frequency − Hz f − Frequency − Hz 0 −40 −100 Right to Left −120 100 VDD = 3.6 V, PO = 1.6 mW RL = 16 Ω −20 −40 Crosstalk − dB Crosstalk − dB −20 0 VDD = 3 V, PO = 20 mW RL = 16 Ω Crosstalk − dB 0 140 CROSSTALK vs FREQUENCY 1.8 2.3 2.8 3.3 3.8 VDD − Supply Voltage − V 4.3 0 1 1.5 2 2.5 3 3.5 4 4.5 5 VDD − Supply Voltage − V Figure 50. Figure 51. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 OUTPUT POWER vs LOAD RESISTANCE 0.68 µF PO − Output Power − mW 100 0.47 µF 90 80 70 60 50 In Phase, VDD = 3 V, THD = 1%, Vary C(PUMP) 40 10 20 30 40 RL − Load Resistance − Ω Out of Phase 15 10 In Phase Out of Phase 25 20 15 In Phase 10 5 0 10 50 30 100 1000 0 10 10000 100 1000 Figure 54. OUTPUT POWER vs LOAD RESISTANCE OUTPUT POWER vs LOAD RESISTANCE OUTPUT POWER vs LOAD RESISTANCE 250 120 PO − Output Power − mW VDD = 3 V, THD = 1%, fIN = 1 kHz, PO = POUTL + POUTR Out of Phase 100 80 In Phase 40 250 VDD = 3 V, THD = 10%, fIN = 1 kHz, PO = POUTL + POUTR 200 10000 RL − Load Resistance − Ω RL − Load Resistance − Ω Figure 53. 140 PO − Output Power − mW 20 Figure 52. 160 60 25 VDD = 1.8 V, THD = 10%, fIN = 1 kHz, PO = POUTL + POUTR 35 5 30 0 VDD = 1.8 V, THD = 1%, fIN = 1 kHz, PO = POUTL + POUTR PO − Output Power − mW PO − Output Power − mW 110 40 30 2.2 µF 1 µF OUTPUT POWER vs LOAD RESISTANCE PO − Output Power − mW 120 OUTPUT POWER vs LOAD RESISTANCE Out of Phase 150 100 In Phase 50 VDD = 3.6 V, THD = 1%, fIN = 1 kHz, PO = POUTL + POUTR 200 Out of Phase 150 100 In Phase 50 20 0 10 0 100 1000 RL − Load Resistance − Ω 10 10000 1000 0 10 10000 RL − Load Resistance − Ω 100 1000 Figure 56. Figure 57. OUTPUT POWER vs LOAD RESISTANCE OUTPUT POWER vs LOAD RESISTANCE OUTPUT POWER vs LOAD RESISTANCE 500 350 300 PO − Output Power − mW 300 VDD = 4.5 V, THD = 10%, fIN = 1 kHz, PO = POUTL + POUTR 250 Out of Phase 200 150 In Phase 100 250 Out of Phase 200 150 In Phase 100 50 50 0 0 VDD = 4.5 V, THD = 10%, fIN = 1 kHz, PO = POUTL + POUTR 450 PO − Output Power − mW VDD = 3.6 V, THD = 10%, fIN = 1 kHz, PO = POUTL + POUTR 10000 RL − Load Resistance − Ω Figure 55. 350 PO − Output Power − mW 100 400 350 Out of Phase 300 250 200 In Phase 150 100 50 10 100 1000 10000 0 10 RL − Load Resistance − Ω 100 1000 10000 RL − Load Resistance − Ω Figure 58. Figure 59. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 10 100 1000 10000 RL − Load Resistance − Ω Figure 60. 13 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 GAIN AND PHASE vs FREQUENCY 2.5 3 60 2.5 60 2 40 −40 −80 40 2 1.5 20 Phase −100 0 1 100 Gain 80 Gain − dB 3 −60 3.5 100 Gain Phase − Degrees −20 Gain − dB Output Spectrum − dBv 3.5 VO = 1 VRMS VDD = 3 V fIN = 1 kHz RL = 32 Ω 0 80 1.5 20 Phase Phase − Degrees OUTPUT SPECTRUM 20 GAIN AND PHASE vs FREQUENCY 0 1 −120 −160 10 14 VCC = 3.6 V, RL = 16 Ω 0.5 −140 100 1k 10 k 100 k 0 10 100 1k 10 k 100 k f − Frequency − Hz f − Frequency − Hz Figure 61. Figure 62. -20 VCC = 3 V, RL = 16 Ω 0.5 -40 1G 0 10 100 1k 10 k 100 k -20 -40 1G f − Frequency − Hz Figure 63. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 APPLICATION INFORMATION Headphone Amplifiers Single-supply headphone amplifiers typically require dc-blocking capacitors. The capacitors are required because most headphone amplifiers have a dc bias on the outputs pin. If the dc bias is not removed, the output signal is severely clipped, and large amounts of dc current rush through the headphones, potentially damaging them. The top drawing in Figure 64 illustrates the conventional headphone amplifier connection to the headphone jack and output signal. DC blocking capacitors are often large in value. The headphone speakers (typical resistive values of 16 Ω or 32 Ω) combine with the dc blocking capacitors to form a high-pass filter. Equation 1 shows the relationship between the load impedance L), the capacitor O), and the cutoff frequency (fC). 1 fc = 2pRLCO (1) CO can be determined using Equation 2, where the load impedance and the cutoff frequency are known. 1 CO = 2pRLfc (2) If fC is low, the capacitor must then have a large value because the load resistance is small. Large capacitance values require large package sizes. Large package sizes consume PCB area, stand high above the PCB, increase cost of assembly, and can reduce the fidelity of the audio output signal. Two different headphone amplifier applications are available that allow for the removal of the output dc blocking capacitors. The Capless amplifier architecture is implemented in the same manner as the conventional amplifier with the exception of the headphone jack shield pin. This amplifier provides a reference voltage, which is connected to the headphone jack shield pin. This is the voltage on which the audio output signals are centered. This voltage reference is half of the amplifier power supply to allow symmetrical swing of the output voltages. Do not connect the shield to any GND reference or large currents will result. The scenario can happen if, for example, an accessory other than a floating GND headphone is plugged into the headphone connector. See the second block diagram and waveform in Figure 64. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 15 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 Conventional VDD CO VOUT CO VDD/2 GND Capless VDD VOUT VBIAS GND VBIAS DirectPathTM VDD GND VSS Figure 64. Amplifier Applications The DirectPath™ amplifier architecture operates from a single supply but makes use of an internal charge pump to provide a negative voltage rail. Combining the user provided positive rail and the negative rail generated by the IC, the device operates in what is effectively a split supply mode. The output voltages are now centered at zero volts with the capability to swing to the positive rail or negative rail. The DirectPath™ amplifier requires no output dc blocking capacitors, and does not place any voltage on the sleeve. The bottom block diagram and waveform of Figure 64 illustrate the ground-referenced headphone architecture. This is the architecture of the TPA4411. Input-Blocking Capacitors DC input-blocking capacitors are required to be added in series with the audio signal into the input pins of the TPA4411 and TPA4411M. These capacitors block the DC portion of the audio source and allow the TPA4411 and TPA4411M inputs to be properly biased to provide maximum performance. These capacitors form a high-pass filter with the input impedance of the TPA4411 and TPA4411M. The cutoff frequency is calculated using Equation 3. For this calculation, the capacitance used is the input-blocking capacitor and the resistance is the input impedance of the TPA4411 or TPA4411M. Because the gains of both the TPA4411 and TPA4411M are fixed, the input impedance remains a constant value. Using the input impedance value from the operating characteristics table, the frequency and/or capacitance can be determined when one of the two values are given. 1 1 fc IN + or C IN + 2p fc R 2p RIN C IN IN IN (3) 16 Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 Charge Pump Flying Capacitor and PVSS Capacitor The charge pump flying capacitor serves to transfer charge during the generation of the negative supply voltage. The PVSS capacitor must be at least equal to the charge pump capacitor in order to allow maximum charge transfer. Low ESR capacitors are an ideal selection, and a value of 2.2 µF is typical. Capacitor values that are smaller than 2.2 µF can be used, but the maximum output power is reduced and the device may not operate to specifications. Figure 65 through Figure 75 compare the performance of the TPA4411 and TPA4411M with the recommended 2.2-µF capacitors and 1-µF capacitors. THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs FREQUENCY 1 VDD = 3.6 V, RL = 32 Ω, PO = 35 mW, 0.1 C = 1 µF 0.01 C = 2.2 µF 0.001 10 100 1k 10 k 100 k f − Frequency − Hz Figure 65. 100 VDD = 3.6 V, RL = 16 Ω, fIN = 20 HZ C = 1 µF 180° Out of Phase 10 In Phase 1 Single Channel 0.1 0.0001 0.001 0.01 0.1 1 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 100 10 VDD = 3.6 V, RL = 16 Ω, fIN = 20 Hz C = 2.2 µF In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 0.001 PO − Output Power − mW 0.01 0.1 PO − Output Power − mW Figure 66. Figure 67. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 17 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 Single Channel In Phase 10 1 180° Out of Phase 0.1 0.01 0.0001 0.001 0.01 0.1 PO − Output Power − mW 1 VDD = 3.6 V, RL = 16 Ω, fIN = 1 kHz C = 2.2 µF 10 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 0.01 0.1 TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER 10 VDD = 3.6 V, RL = 16 Ω, fIN = 10 kHZ C = 1 µF In Phase 1 180° Out of Phase 0.1 0.01 Single Channel 0.001 0.0001 0.001 0.01 0.1 1 THD+N − Total Harmonic Distortion + Noise − % Figure 69. 100 VDD = 3.6 V, RL = 16 Ω, fIN = 10 kHz C = 2.2 µF 10 In Phase 180° Out of Phase 1 Single Channel 0.1 0.01 0.001 0.01 0.1 PO − Output Power − mW PO − Output Power − mW Figure 70. Figure 71. TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER VDD = 3.6 V, RL = 32 Ω, fIN = 20 HZ C = 1 µF In Phase 10 Single Channel 1 180° Out of Phase 0.1 0.0001 0.001 0.01 0.1 PO − Output Power − mW 1 100 10 VDD = 3.6 V, RL = 32 Ω, fIN = 20 Hz C = 2.2 µF In Phase 180° Out of Phase 1 0.1 Single Channel 0.01 0.001 0.001 0.01 0.1 PO − Output Power − mW Figure 72. 18 In Phase Figure 68. 100 100 100 PO − Output Power − mW THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % VDD = 3.6 V, RL = 16 Ω, fIN = 1 kHZ C = 1 µF TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER THD+N − Total Harmonic Distortion + Noise − % 100 THD+N − Total Harmonic Distortion + Noise − % THD+N − Total Harmonic Distortion + Noise − % TOTAL HARMONIC DISTORTION + NOISE vs OUTPUT POWER Figure 73. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 SUPPLY VOLTAGE REJECTION RATIO vs FREQUENCY 0 k SVR − Supply Voltage Rejection Ratio − V k SVR − Supply Voltage Rejection Ratio − V SUPPLY VOLTAGE REJECTION RATIO vs FREQUENCY VDD = 3.6 V, RL = 32 Ω, C = 1 µF −10 −20 −30 −40 −50 −60 −70 −80 −90 −100 10 100 1k 10 k 100 k 0 −10 RL = 32 Ω C = 2.2 µF −20 −30 −40 −50 −60 −70 3V 1.8 V 4.5 V −80 −90 −100 10 f − Frequency − Hz 3.6 V 100 1k 10 k 100 k f − Frequency − Hz Figure 74. Figure 75. Decoupling Capacitors The TPA4411 and TPA4411M are DirectPath™ headphone amplifiers that require adequate power supply decoupling to ensure that the noise and total harmonic distortion (THD) are low. A good low equivalent-series-resistance (ESR) ceramic capacitor, typically 2.2 µF, placed as close as possible to the device VDD lead works best. Placing this decoupling capacitor close to the TPA4411 or TPA4411M is important for the performance of the amplifier. For filtering lower frequency noise signals, a 10-µF or greater capacitor placed near the audio power amplifier would also help, but it is not required in most applications because of the high PSRR of this device. Supply Voltage Limiting At 4.5 V The TPA4411 and TPA4411M have a built-in charge pump which serves to generate a negative rail for the headphone amplifier. Because the headphone amplifier operates from a positive voltage and negative voltage supply, circuitry has been implemented to protect the devices in the amplifier from an overvoltage condition. Once the supply is above 4.5 V, the TPA4411 and TPA4411M can shut down in an overvoltage protection mode to prevent damage to the device. The TPA4411 and TPA4411M resume normal operation once the supply is reduced to 4.5 V or lower. Layout Recommendations Exposed Pad On TPA4411RTJ and TPA4411MRTJ Package Option The exposed metal pad on the TPA4411RTJ and TPA4411MRTJ packages must be soldered down to a pad on the PCB in order to maintain reliability. The pad on the PCB should be allowed to float and not be connected to ground or power. Connecting this pad to power or ground prevents the device from working properly because it is connected internally to PVSS. TPA4411RTJ and TPA441MRTJ PowerPAD Sizes Both the TPA4411 and TPA4411M are available in a 4 mm × 4mm QFN. The exposed pad on the bottom of the package is sized differently between the two devices. The TPA4411RTJ PowerPAD is larger than the TPA4411MRTJ PowerPAD. Please see the layout and mechanical drawings at the end of the datasheet for proper sizing. SGND and PGND Connections The SGND and PGND pins of the TPA4411 and TPA4411M must be routed separately back to the decoupling capacitor in order to provide proper device operation. If the SGND and PGND pins are connected directly to each other, the part functions without risk of failure, but the noise and THD performance do not meet the specifications. Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M 19 TPA4411 TPA4411M www.ti.com SLOS430E – AUGUST 2004 – REVISED MARCH 2008 PVDD INL− INL+ CODEC HPL or SPK1 TLV320AIC26 or TLV320AIC28 AVDD PGND TPA2012D2 HPR or SPK2 INR− INR+ AGND SDR SDL Gain0 Gain1 Control SDL SDR PGND SGND TPA4411 OUTL 1 mF INR OUTR 1 mF VCC INL PVSS SVSS PVDD SVDD 2.2 mF C1P 2.2 mF C1N 2.2 mF Figure 76. Application Circuit Shutdown Control 16 17 18 C1 2.2 mF 19 20 1.8 − 4.5 V C5 1 15 C2 2.2 mF 2 14 Shutdown Control 1 mF 3 13 − C3 2.2 mF Right Audio Input 1 mF + + Left Audio Input − 4 C4 12 5 10 9 8 7 6 11 No Output DC-Blocking Capacitors Note: PowerPAD must be soldered down and plane must be floating. Figure 77. Typical Circuit 20 Copyright © 2004–2008, Texas Instruments Incorporated Product Folder Link(s): TPA4411 TPA4411M PACKAGE OPTION ADDENDUM www.ti.com 16-Apr-2009 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Eco Plan (2) Qty TPA4411MRTJR ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJRG4 ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJT ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411MRTJTG4 ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJR ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJRG4 ACTIVE QFN RTJ 20 3000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJT ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411RTJTG4 ACTIVE QFN RTJ 20 250 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR TPA4411YZHR ACTIVE DSBGA YZH 16 3000 Green (RoHS & no Sb/Br) Call TI Level-1-260C-UNLIM TPA4411YZHT ACTIVE DSBGA YZH 16 250 Call TI Level-1-260C-UNLIM Green (RoHS & no Sb/Br) Lead/Ball Finish MSL Peak Temp (3) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Mar-2009 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing TPA4411MRTJR QFN RTJ 20 TPA4411MRTJT QFN RTJ TPA4411RTJR QFN RTJ TPA4411RTJT QFN TPA4411YZHR SPQ Reel Reel Diameter Width (mm) W1 (mm) A0 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1 20 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 Q1 20 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 RTJ 20 250 180.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2 DSBGA YZH 16 3000 180.0 8.4 2.38 2.4 0.8 4.0 8.0 Q1 TPA4411YZHR DSBGA YZH 16 3000 180.0 8.4 2.35 2.35 0.81 4.0 8.0 Q1 TPA4411YZHT DSBGA YZH 16 250 180.0 8.4 2.35 2.35 0.81 4.0 8.0 Q1 TPA4411YZHT DSBGA YZH 16 250 180.0 8.4 2.38 2.4 0.8 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 16-Mar-2009 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPA4411MRTJR QFN RTJ 20 3000 346.0 346.0 29.0 TPA4411MRTJT QFN RTJ 20 250 190.5 212.7 31.8 TPA4411RTJR QFN RTJ 20 3000 346.0 346.0 29.0 TPA4411RTJT QFN RTJ 20 250 190.5 212.7 31.8 TPA4411YZHR DSBGA YZH 16 3000 190.5 212.7 31.8 TPA4411YZHR DSBGA YZH 16 3000 220.0 220.0 34.0 TPA4411YZHT DSBGA YZH 16 250 220.0 220.0 34.0 TPA4411YZHT DSBGA YZH 16 250 190.5 212.7 31.8 Pack Materials-Page 2 D: Max = 2196 µm, Min = 2136 µm E: Max = 2196 µm, Min = 2136 µm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. 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