FMMT591 General Purpose Transistor PNP Silicon P b Lead(Pb)-Free COLLECTOR 3 3 1 BASE 1 2 SOT-23 2 EMITTER Maximum Ratings Symbol Value Unit Collector-Base Breakdown Voltage V(BR)CEO -60 V Collector-Emitter Breakdown Voltage V(BR)CBO -80 V Emitter-Base Breakdown Voltage V(BR)EBO -5.0 V Collector Current IC -1.0 A Power Dissipation TA=25°C PD 500 mW Junction Temperature Range TJ +150 °C Storage Temperature Range TSTG -55 to +150 °C Rating Device Marking FMMT591=591 Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Collent-Emitter Breakdown Voltage1 IC = -1.0mA, IB = 0 V(BR)CEO -60 - - V Collent-Base Breakdown Voltage IC = -100µA, IE = 0 V(BR)CBO -80 - - V Collent Cutoff Current IC = 0, IE = -100µA V(BR)EBO -5.0 - - V Collector Cut-off Current VCB = -60V, IE = 0 ICBO - - -0.1 µA Emitter Cut-off Current VEB = -4.0V, IC = 0 IEBO - - -0.1 µA Off Characteristics WEITRON http://www.weitron.com.tw 1/4 23-Jan-06 FMMT591 Electrical Characteristics (TA=25ºC Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit hFE1 hFE2 hFE3 hFE4 100 100 80 15 - 300 - - Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA IC = -1.0A, IB = -100mA VCE(sat) - - -0.3 -0.6 V Base-Emitter Saturation Voltage IC = -1.0A, IB = -100mA VBE(sat) - - -1.2 V Base-Emitter Saturation Voltage VCE = -5.0A, IC = -1.0A VBE - - -1.0 V fT 150 - - MHz Cob - - 10 pF On Characteristics (1) DC Current Gain VCE= -5.0V, IC= -1.0mA VCE= -5.0V, IC= -500mA VCE= -5.0V, IC= -1.0A VCE= -5.0V, IC= -2.0A Small-signal Characteristics Transition Frequency VCE = -10V, IC = -50mA, f = 100MHz Output Capacitance VCB = -10V, f = 1.0MHz 1. Measured under pulsed conditions, Pulse width = 300µs, Duty cycle ≤ 2%. WEITRON http://www.weitron.com.tw 2/4 23-Jan-06 FMMT591 TYPICAL TRANSIENT CHARACTERISTICS 0.6 0.6 +25°C VCE(sat) (V) VCE(sat) (V) 0.5 0.4 0.3 IC/IB=10 IC/IB=50 0.2 0.4 0.3 0.1 1 10 100 1000 10 1 Fig.2 VCE(sat) vs IC VBE(sat) (V) +25°C 200 -55°C 100 10000 IC/IB=10 1.0 VCE=5V 0.8 0.6 -55°C +25°C +100°C 0.4 0.2 0 1 10 100 1000 10000 1 10 IC-Collector Current (A) 1.0 0.8 0.6 -55°C +25°C +100°C 0.4 0.2 10 100 1000 0.1 DC 1s 100ms 10ms 1ms 100µs 1 10 100 VCE-Collector Emitter Voltage (V) Fig.5 VBE(on) vs IC http://www.weitron.com.tw 1 0.01 0.1 10000 IC-Collector Current (mA) WEITRON 10000 10 VCE=5V 1 1000 Fig.4 VBE(sat) vs IC Fig.3 hFE vs IC 1.2 100 IC-Collector Current (mA) IC-Collector Current (mA) VBE(on) (V) 1000 Fig.1 VCE(sat) vs IC 300 0 100 IC-Collector Current (mA) +100°C hFE - Typical Gain 0 10000 IC-Collector Current (mA) 400 0 -55°C +25°C +100°C 0.2 0.1 0 IC/IB=10 0.5 Fig.6 Safe Operating Area 3/4 23-Jan-06 FMMT591 SOT-23 Package Outline Dimensions Unit:mm A B TOP VIEW E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M 4/4 23-Jan-06