BC337/BC338 NPN General Purpose Transistor COLLECTOR P b Lead(Pb)-Free 1 TO-92 2 BASE 1 3 2 EMITTER 3 Maximum Ratings(TA=25°C unless otherwise noted) Symbol BC337 BC338 Unit Collector-Base voltage VCBO 50 30 V Collector-Emitter voltage VCEO 45 25 V Emitter-Base voltage VEBO 5.0 5.0 V Rating Collector Current Continuous lC 800 mA Total Device Dissipation Alumina Substrate,TA=25°C PD 625 mW/°C Operating Junction Temperature Range TJ -55 to +150 °C Tstg -55 to +150 °C Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC=100µA, I E=0 Collector-Emitter Breakdown Voltage IC=10mA, I B=0 Emitter-Base Breakdown Voltage IC=10µA, IC=0 WEITRON http://www.weitron.com.tw BC337 BC338 V(BR)CBO 50 30 - - BC337 BC338 V(BR)CEO 45 25 - - BC337 BC338 V(BR)EBO 5.0 - - 1/3 V V Vdc 30-Jun-06 BC337/BC338 ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) (Countinued) Min Typ Characteristics Symbol Max Unit lCEO 0.2 µA lCBO 0.1 µA lEBO 0.1 µA OFF CHARACTERISTICS Collector Cut-off Current VCE=40V, l B=0 VCE=20V, l B=0 BC337 BC338 Collector Cut-off Current VCB=45V, l E=0 VCB=25V, l E=0 BC337 BC338 Emitter Cutoff Current VEB=4.0V, l C=0 ON CHARACTERISTICS DC Current Gain VCE=1V, l C=100mA VCE=1V, l C=300mA hFE1 100 hFE2 60 Collector-Emitter Saturation Voltage lC=500mA, l B=50mA VCE(sat) - - 0.7 V Base-Emitter Saturation Voltage lC=500mA, l B=50mA VBE(sat) - - 1.2 V fT 210 - - MHz Transition frequency VCE=5V, l C=10mA, f=100MHz - 630 - - hFE Classification Classification 16 25 40 hFE1 100 ~ 250 160 ~ 400 250 ~ 630 hFE2 60- 100- 170- WEITRON http://www.weitron.com.tw 2/3 30-Jun-06 BC327/BC328 Typical Characteristics -20 IC mA , COLLECTOR CURRENT IC mA , COLLECTOR CURRENT -500 mA - 5.0 A I B = - 4.5m = mA IB - 4.0 A I B = - 3.5m A m = IB - 3.0 A I B = - 2.5m mA IB = - 2.0 = IB -400 -300 IB = -200 mA - 1.5 PT = 60 0m IB = - 1.0mA W IB = - 0.5mA -100 IB= -16 IB= -12 -1 -2 -3 -4 µA 30µA 0µA IB = - 2 -4 IB = - 10µA -5 -10 V CE = - 2.0V 100 - 1.0V 10 -1 -10 -100 -1000 IC(mA), COLLECTOR CURRENT fT[MHz], GAIN-BANDWIDTH PRODUCT VCE = -1V PULSE -10 -1 -0.5 -0.6 -0.7 -0.8 -0.9 VBE[V], BASE-EMITTER VOLTAGE http://www.weitron.com.tw -10 IC = 10 IB PULSE V CE(sat) -1 -0.1 V BE(sat) -0.01 -0.1 -1 -10 -100 -1000 1000 VCE = -5.0V 100 10 -1 -10 -100 IC[mA], COLLECTOR CURRENT Fig.6 Gain Bandwidth Product Fig.5 Base-Emitter On Voltage WEITRON -50 Fig.4 Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -1000 -0.1 -0.4 -40 IC(mA), COLLECTOR CURRENT Figure 3. DC current Gain -100 -30 Fig.2 Static Characteristic PULSE -0.1 IB = 0 -20 VCE(V), COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 =6 00 mW - 40 IB = - -8 Figure 1. Static Characteristic hFE, DC CURRENT GAIN T µA - 50 IB= VCE(V), COLLECTOR-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT P IB = 0 -0 1 µA - 80 µA - 70 IB= µA - 60 IB= 3/4 29-Jun-06 BC337/BC338 TO-92 Outline Dimensions unit:mm E H Dim A B C D E G H J K L L C J K Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 D A B G TO-92 WEITRON http://www.weitron.com.tw 3/3 30-Jun-06