WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO -5 V IC(DC) -1.5 IC(Pulse) -3 Collector Power Dissipation PD 1 W Junction Temperature Tj 150 ˚C Tstg -55 to +150 ˚C Rating Collector Current Storage Temperature Range A Device Marking WTM649A=649A ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=-1mA, IE=0 Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 Emitter-Base Breakdown Voltage IE=-1mA, IC=0 Collector Cutoff Current VCB=-160V, IE=0 WEITRON http://www.weitron.com.tw Min Typ Max Unit BVCBO -180 - - V BVCEO -160 - - V BVEBO -5 - - V ICBO - - -10 µA Symbol 1/4 01-Aug-05 WTM649A ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE1 hFE2 60 30 - 200 - - Collector-Emitter Saturation Voltage IC=-600mA, IB=-50mA VCE(sat) - - -1 V Base-Emitter Saturation Voltage VCE=-5V, IC=-150mA VBE(on) - - -1.5 V fT - 140 - MHz Cob - 27 - pF Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=-5V, IC=-150mA VCE=-5V, IC=-500mA 1. Pulse Test: Pulse Width ≤ 380µs, Duty Cycle ≤ 2% DYNAMIC CHARACTERISTICS Transition Frequency VCE=-5V, IC=-150mA, f=100MHz Output Capacitance VCB=-10V, f=1MHz CLASSIFICATION OF hFE1 Rank B C hFE1 60-120 100-200 WEITRON http://www.weitron.com.tw 2/4 01-Aug-05 WTM649A ELECTRICAL CHARACTERISTIC CURVES 250 25˚C 200 -25˚C 150 100 50 0 -1 -10 -100 Gain bandwidth product fT (MHz) Base to emitter saturation voltage VBE(sat)(V) 1.0 TC=-25˚C 75˚C 25˚C 0.4 0.2 0 1 3 10 30 100 300 1000 Collector current IC (mA) 20 10 5 -1 0 25˚C -1 -10 -100 Collector current IC (mA) -1000 VCE=5V Ta=-25˚C 200 160 120 80 40 0 10 30 100 300 Collector current IC (mA) 1000 ICmax (-13.3V, -1.5A) -1.0 50 2 -25˚C -0.2 -3 f = 1 MHz IE = 0 Collector Current I C (A ) Collector output capacitance Cob (pF) 100 Ta=-75˚C -0.4 Fig.4 Gain Bandwidth Product & Collector Current Fig.3 Satueation Voltage & Collector Current 200 -0.6 240 lC=101B 0.6 -0.8 Fig.2 Satueation Voltage & Collector Current Fig.1 Current Gain & Collector Current 0.8 lC=101B -1.0 -1000 Collector current IC (mA) 1.2 -1.2 VCE(sat) (V) VCE = -5V Ta=75˚C 300 Collector to emiter saturation voltage DC Current Transistor Ratio hFE 350 -3 -10 -30 -100 Collector to base voltage VCB (V) Fig.5 Capacitance & Collector to Base Voltage WEITRON http://www.weitron.com.tw 3/4 (-40V, -0.5A) -0.3 -0.1 DC Operation (TC=25˚C) -0.03 -0.01 -1 (-160V, -0.02A) -3 -10 -30 -100 -300 Collector to emitter voltage VCE (V) Fig.6 Safe Operating Area 01-Aug-05 WTM649A SOT-89 Outline Dimensions Dim E G H B K A B C D E G H J K L A C J unit:mm D L WEITRON http://www.weitron.com.tw 4/4 SOT-89 Min Max 1.400 1.600 0.320 0.520 0.360 0.560 0.350 0.440 4.400 4.600 1.400 1.800 2.300 2.600 3.940 4.250 1.500TYP 2.900 3.100 01-Aug-05