2SB624 PNP Epitaxial Planar Transistors 3 P b Lead(Pb)-Free 2 1 SC-59 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 A Collector Power Dissipation PD 200 mW Junction Temperature Tj 150 ˚C Tstg -55 to +150 ˚C Rating Storage Temperature Range ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Symbol Min Typ Max Unit BVCBO -30 - - V BVCEO -25 - - V BVEBO -5 - - V Collector Cutoff Current VCB=-30V, IE =0 ICBO - - -0.1 µA Emitter Cutoff Current VEB =-5V, IE =0 IEBO - - -0.1 µA Collector-Base Breakdown Voltage IC=-100µA, IE =0 Collector-Emitter Breakdown Voltage IC=-1mA, IB =0 Emitter-Base Breakdown Voltage IE=-100µA, IC =0 WEITRON http://www.weitron.com.tw 2SB624 ELECTRICAL CHARACTERISTICS (TA=25˚C Unless otherwise noted) Symbol Min Typ Max Unit hFE1 hFE2 110 50 - 400 - - Collector-Emitter Saturation Voltage IC=-700mA, IB =-70mA VCE(sat) - - -0.6 V Base-Emitter Voltage VCE=-6V, I C =-10mA VBE(on) -0.6 - -0.7 V fT - 160 - MHz Cob - 17 - pF Characteristic ON CHARACTERISTICS(1) DC Current Gain VCE=-1V, I C =-100mA VCE=-1V, I C =-700mA 1. Pulse Test: Pulse Width ≤ 350µs, Duty Cycle ≤ 2% DYNAMIC CHARACTERISTICS Transition Frequency VCE=-6V, IC =-10mA Output Capacitance VCB=-6V, IE=0, f=1MHz CLASSIFICATION OF hFE1 Marking BV1 BV2 BV3 BV4 BV5 Rank 1 2 3 4 5 hFE1 110-180 135-220 170-270 200-320 250-400 WEITRON http://www.weitron.com.tw 2/4 16-Aug-05 2SB624 ELECTRICAL CHARACTERISTIC CURVES -100 Free air IC-Collector Current(mA) PT - Total Power Dissipation (mW) 250 200 150 100 50 0 0 25 50 75 100 125 -500 -80 -350 -300 -60 -200 m W -100 IB= -50µA 0 TA-Ambient Temperature (˚C) =2 00 -150 -20 0 PT -250 -40 150 -450 -400 -2 -4 -6 -8 -10 VCE-Collector to Emitter Voltage(V) Fig.2 COLLECTOR CURRENT VS. COLLECTOR TO EMITTER VOLTAGE Fig.1 TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE -1000 VCE = -6.0V Pulsed -100 hFE - DC Current Gain -10 1 100 10 -0.1 -0.1 -0.9 -1.0 VCE - Collector to Emitter Voltage (V) VCE(sat) - Collector Saturation Voltage (V) VBE(sat) - Base Saturation Voltage (V) 10 IC = 10·IB Pulsed -1 -0.1 -0.01 -10 -100 -1000 IC - Collector Current (mA) http://www.weitron.com.tw -1000 -1.0 -0.8 -0.6 Pulsed -0.4 -0.2 0 0.1 -1 -10 -100 IB - Base Current (mA) Fig.6 COLLECTOR TO EMITTER VOLTAGE VS. BASE CURRENT Fig.5 BASE AND COLLECTOR SATURATION VOLTAGE VS. COLLECTOR CURRENT WEITRON -100 Fig.4 DC CURRENT GAIN VS. COLLECTOR CURRENT Fig.3 COLLECTOR CURRENT VS. BASE TO EMITTER VOLTAGE -1 -10 IC - Collector Current (mA) VBE - Base to Emitter Voltage (V) -0.001 -0.1 -1 -1.1 IC = -500mA -0.8 IC = -250mA -0.6 -0.7 IC = -200mA -0.1 -0.4 -0.5 VCE = -1.0V Pulsed IC = -100mA IC - Collector Current (mA) 1000 3/4 16-Aug-05 2SB624 SC-59 Outline Dimension Unit:mm A SC-59 L S 2 3 Top View B 1 D G J C H WEITRON http://www.weitron.com.tw K 4/4 Dim Min Max A B C D G H J K L S 2.70 1.30 1.00 0.35 1.70 0.00 0.10 0.20 1.25 2.25 3.10 1.70 1.30 0.50 2.30 0.10 0.26 0.60 1.65 3.00 All Dimension in mm 16-Aug-05