WEITRON WTK4424

WTK4424
6
5
D
4
D
G
7
3
D
S
8
S
2
D
S
P b Lead(Pb)-Free
1
Surface Mount N-Channel
Enhancement Mode MOSFET
DRAIN CURRENT
13.8 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
Description:
The WTK4424 provide the designer with the best combination of
fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
1
The SOP-8 package is universally preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
SOP-8
Features:
*Low On-Resistance
*High Vgs Max Rating Voltage
*Surface Mount Package
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
Ratings
Unit
VDS
30
V
VGS
±20
V
Continuous Drain Current
3
ID @TA=25
13.8
A
Continuous Drain Current
3
ID @TA=70
11
A
50
A
2.5
W
Pulsed Drain Current
1
Total Power Dissipation
IDM
PD @TA=25
Linear Derating Factor
Operating Junction and Storage Temperature Range
0.02
Tj, Tstg
W/
-55 ~ +150
Device Marking
WTK4424 = 4424SC
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01-Dec-08
WTK4424
Electrical Characteristics(Tj = 25
Parameter
Unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
Breakdown Voltage Temperature Coefficient
BVDSS / Tj
-
0.02
-
Gate Threshold Voltage
VGS(th)
1.0
-
3.0
V
VDS=VGS, ID=250uA
gfs
-
21
-
S
VDS=10V, ID=13A
IGSS
-
-
100
nA
VGS=
-
-
1
uA
VDS=30V, VGS=0
-
-
25
uA
VDS=24V, VGS=0
-
-
9
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance2
IDSS
RDS(ON)
V/
m
Test Conditions
VGS=0, ID=250uA
Reference to 25 , ID=1mA
20V
VGS=10V, ID=13A
-
-
14
Qg
-
23
35
Gate-Source Charge
Qgs
-
6
-
Gate-Drain (“Miller”) Change
Qgd
-
15
-
Td(on)
-
13
-
Tr
-
9
-
Td(off)
-
35
-
Tf
-
17
-
Input Capacitance
Ciss
-
1920
3070
Output Capacitance
Coss
-
410
-
Reverse Transfer Capacitance
Crss
-
300
-
Rg
-
0.9
-
Symbol
Min.
Typ.
Max.
Unit
VSD
-
-
1.2
V
IS=2.1A, VGS=0V
Reverse Recovery Time2
Trr
-
33
-
ns
Reverse Recovery Charge
Qrr
-
26
-
nC
IS=13A, VGS=0V
dI/dt=100A/fls
Total Gate Charge2
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Gate Resistance
VGS=4.5V, ID=10A
nC
ID=13A
VDS=24V
VGS=4.5V
ns
VDS=25V
ID=1A
VGS=10V
RG=3.3
RD=15
pF
VGS=0V
VDS=25V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Parameter
2
Forward On Voltage
Test Conditions
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2%.
2
3. Surface mounted on 1 in copper pad of FR4 board; 125 /W when mounted on Min. copper pad.
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WTK4424
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WTK4424
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WTK4424
SO-8 Package Outline Dimensions
Unit:mm
1
θ
L
E1
D
7(4X)
e
B
A1
2A
A
C
7 (4X)
eB
SYMBOLS
A
A1
B
C
D
E1
eB
e
L
θ
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MILLIMETERS
MAX
MIN
1.75
1.35
0.20
0.10
0.45
0.35
0.18
0.23
4.69
4.98
3.56
4.06
5.70
6.30
1.27 BSC
0.60
0.80
0
8
5/5
01-Dec-08