WTK4424 6 5 D 4 D G 7 3 D S 8 S 2 D S P b Lead(Pb)-Free 1 Surface Mount N-Channel Enhancement Mode MOSFET DRAIN CURRENT 13.8 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE Description: The WTK4424 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 1 The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SOP-8 Features: *Low On-Resistance *High Vgs Max Rating Voltage *Surface Mount Package Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Symbol Ratings Unit VDS 30 V VGS ±20 V Continuous Drain Current 3 ID @TA=25 13.8 A Continuous Drain Current 3 ID @TA=70 11 A 50 A 2.5 W Pulsed Drain Current 1 Total Power Dissipation IDM PD @TA=25 Linear Derating Factor Operating Junction and Storage Temperature Range 0.02 Tj, Tstg W/ -55 ~ +150 Device Marking WTK4424 = 4424SC WEITRON http://www.weitron.com.tw 1/5 01-Dec-08 WTK4424 Electrical Characteristics(Tj = 25 Parameter Unless otherwise specified) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 30 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.02 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 21 - S VDS=10V, ID=13A IGSS - - 100 nA VGS= - - 1 uA VDS=30V, VGS=0 - - 25 uA VDS=24V, VGS=0 - - 9 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 IDSS RDS(ON) V/ m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA 20V VGS=10V, ID=13A - - 14 Qg - 23 35 Gate-Source Charge Qgs - 6 - Gate-Drain (“Miller”) Change Qgd - 15 - Td(on) - 13 - Tr - 9 - Td(off) - 35 - Tf - 17 - Input Capacitance Ciss - 1920 3070 Output Capacitance Coss - 410 - Reverse Transfer Capacitance Crss - 300 - Rg - 0.9 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=2.1A, VGS=0V Reverse Recovery Time2 Trr - 33 - ns Reverse Recovery Charge Qrr - 26 - nC IS=13A, VGS=0V dI/dt=100A/fls Total Gate Charge2 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Gate Resistance VGS=4.5V, ID=10A nC ID=13A VDS=24V VGS=4.5V ns VDS=25V ID=1A VGS=10V RG=3.3 RD=15 pF VGS=0V VDS=25V f=1.0MHz f=1.0MHz Source-Drain Diode Parameter 2 Forward On Voltage Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 2 3. Surface mounted on 1 in copper pad of FR4 board; 125 /W when mounted on Min. copper pad. WEITRON http://www.weitron.com.tw 2/5 01-Dec-08 WTK4424 WEITRON http://www.weitron.com.tw WEITRON 3/5 01-Dec-08 WTK4424 WEITRON http://www.weitron.com.tw 4/5 01-Dec-08 WTK4424 SO-8 Package Outline Dimensions Unit:mm 1 θ L E1 D 7(4X) e B A1 2A A C 7 (4X) eB SYMBOLS A A1 B C D E1 eB e L θ WEITRON http://www.weitron.com.tw MILLIMETERS MAX MIN 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 5/5 01-Dec-08