SECOS SSG4403_09

SSG4403
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, RDS(ON) 50 mΩ
Ω
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8
DESCRIPTION
B
The SSG4403 uses advanced trench technology
to provide excellent on-resistance, low gate charge and
operation with gate voltages as low as 2.5V.
The device is suitable for use as a load switch or
in PWM applications.
L
FEATURES
A
Low Gate Charge
Lower On-resistance
Fast Switching Characteristic
N
H
D
D
D
REF.
8
7
6
5
A
B
C
D
E
F
G
Gate
4403SC
= Date Code
1
2
3
4
S
S
S
G
G
K
E
F
Drain
D
C
J
PACKAGE DIMENSIONS
D
M
Source
Millimeter
Min.
Max.
5.80
6.20
4.80
5.00
3.80
4.00
0°
8°
0.40
0.90
0.19
0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
0.35
0.49
0.375 REF.
45°
1.35
1.75
0.10
0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
3
Continuous Drain Current
3
Continuous Drain Current
1
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
VDS
VGS
ID @Ta=25℃
ID @Ta=70℃
IDM
PD @Ta=25℃
-30
±12
-6.1
-5.1
-60
2.5
0.02
-55 ~ +150
V
V
A
A
A
W
W/℃
℃
50
℃/W
Thermal Resistance Junction-ambient
3
Max.
Tj, Tstg
THERMAL DATA
Rθj-amb
P-CHANNEL ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25℃)
Drain-Source Leakage Current(Tj=55℃)
2
Static Drain-Source On-Resistance
2
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
2
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
2
Forward On Voltage
Continuous Source Current (Body Diode)
2
Reverse Recovery Time
Reverse Recovery Charge
Notes:
BVDSS
VGS(th)
gfs
IGSS
MIN.
TYP.
MAX. UNIT
-30
-0.7
-1.3
11
±100
-1
IDSS
-5
50
RDS(ON)
61
117
Qg
9.4
Qgs
2
Qgd
3
Td(on)
7.6
Tr
8.6
Td(off)
44.7
Tf
16.5
Ciss
940
Coss
104
Crss
73
SOURCE-DRAIN DIODE
VSD
-1.0
IS
-4.2
Trr
22.7
Qrr
15.9
-
V
V
S
nA
µA
µA
mΩ
nC
ns
pF
V
A
ns
nC
TEST CONDITIONS
VGS=0, ID=-250µA
VDS=VGS, ID=-250µA
VDS=-5V, ID=-5A
VGS= ±12V
VDS=-30V, VGS=0
VDS=-24V, VGS=0
VGS=-10V, ID=-6.1A
VGS=-4.5V, ID=-5A
VGS=-2.5 V, ID=-1 A
ID=-5 A
VDS=-15 V
VGS=-4.5 V
VDS=-15 V
ID=-10 V
RG=6 Ω
RL=2.4 Ω
VGS=0 V
VDS=-15 V
f=1.0 MHz
IS=-1A, VGS=0 V
IS = -5A, VGS = 0V,
dl/dt = 100A/µs
1. Pulse width limited by Max. junction temperature.
2. Pulse width≦300µs, duty cycle≦2%.
3. Surface Mounted on 1 in2 copper pad of FR4 board; 125 °C/W when mounted on Min. copper pad.
29-Oct-2009 Rev. B
Page 1 of 3
SSG4403
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, RDS(ON) 50 mΩ
Ω
CHARACTERISTIC CURVE
29-Oct-2009 Rev. B
Page 2 of 3
SSG4403
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-6.1 A, -30 V, RDS(ON) 50 mΩ
Ω
CHARACTERISTIC CURVE (cont’d)
29-Oct-2009 Rev. B
Page 3 of 3