Product specification AP2301BGN-HF ▼ Simple Drive Requirement ▼ Small Package Outline D BVDSS -20V RDS(ON) 130mΩ ID ▼ Surface Mount Device - 2.8A ▼ RoHS Compliant & Halogen-Free S SOT-23 Description G D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. G S The SOT-23 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 20 V +8 V 3 -2.8 A 3 -2.1 A Continuous Drain Current Continuous Drain Current 1 IDM Pulsed Drain Current -12 A PD@TA=25℃ Total Power Dissipation 1.38 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-amb Parameter Maximum Thermal Resistance, Junction-ambient http://www.twtysemi.com [email protected] 3 Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2301BGN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. VGS=0V, ID=-250uA -20 - - V VGS=-4.5V, ID=-2.8A - - 130 mΩ VGS=-2.5V, ID=-2A - - 190 mΩ -0.5 - -1.25 V - 7.6 - S VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA VDS=-5V, ID=-2A Max. Units gfs Forward Transconductance IDSS Drain-Source Leakage Current VDS=-16V, VGS=0V - - -1 uA IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +100 nA ID=-2A - 7.5 12 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-16V - 1 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 3 - nC VDS=-10V - 8.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 18 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-5V - 22 - ns tf Fall Time RD=10Ω - 10 - ns Ciss Input Capacitance VGS=0V - 550 1470 pF Coss Output Capacitance VDS=-20V - 60 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF Rg Gate Resistance f=1.0MHz - 6 9 Ω Min. Typ. IS=-1.2A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-2A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC http://www.twtysemi.com [email protected] 4008-318-123 2 of 2