WTK9971 Surface Mount Dual N-Channel Enhancement Mode MOSFET 7 6 D2 3 D1 S2 8 G1 2 DRAIN CURRENT 5 AMPERES 5 DRAIN SOURCE VOLTAGE D2 4 G2 Features: D1 S1 1 P b Lead(Pb)-Free 60 VOLTAGE *Super high dense cell design for low RDS(ON) RDS(ON)<50mΩ @VGS = 10V RDS(ON)<60mΩ @VGS = 4.5V *Simple Drive Requirement *Dual N MOSFET Package *SO-8 Package 1 SO-8 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unite Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS + 20 - V Continuous Drain Current (1) (TA =25˚C) (TA =70˚C) 5.0 ID 3.2 A Pulsed Drain Current (2) IDM 30 A Power Dissipation (1) (TA =25˚C) PD 2 W Maximax Junction-to-Ambient (1) R θJA 62.5 C/W Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C Device Marking WTK9971=9971SS WEITRON http://www.weitron.com.tw 1/5 19-Nov-08 WTK9971 Electrical Characteristics Parameter (TA=25 C Unless otherwise noted) Symbol Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS 60 - - V Breakdown Voltage Temperature Coefficient BVDSS / Tj - 0.06 - Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA gfs - 7 - S VDS=10V, ID=5A IGSS - - ±100 nA VGS= ±25V - - 1 uA VDS=60V, VGS=0 - - 25 uA VDS=48V, VGS=0 - - 50 Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) IDSS Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance2 RDS(ON) V/ mfl Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VGS=10V, ID=5A - - 60 Qg - 32.5 - Gate-Source Charge Qgs - 4.9 - Gate-Drain (“Miller”) Change Qgd - 8.8 - Td(on) - 9.6 - Tr - 10 - Td(off) - 30 - Tf - 5.5 - Input Capacitance Ciss - 1658 - Output Capacitance Coss - 156 - Reverse Transfer Capacitance Crss - 109 - Symbol Min. Typ. Max. Unit VSD - - 1.2 V IS=1.6A, VGS=0V Reverse Recovery Time Trr - 29.2 - ns Reverse Recovery Charge Qrr - 48 - nC IS=5A, VGS=0V dI/dt=100A/?s 2 Total Gate Charge 2 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time VGS=4.5V, ID=2.5A nC ID=5A VDS=48V VGS=10V ns VDS=30V ID=5A VGS=10V RG=3.3fl RD=6fl pF VGS=0V VDS=25V f=1.0MHz Source-Drain Diode Parameter Forward On Voltage2 Test Conditions Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 135 /W when mounted on Min. copper pad. WEITRON http://www.weitron.com.tw 2/5 19-Nov-08 WTK9971 WEITRON http://www.weitron.com.tw WE IT R ON 3/5 19-Nov-08 WTK9971 WEITRON http://www.weitron.com.tw WE IT R ON 4/5 19-Nov-08 WTK9971 SO-8 Package Outline Dimensions Unit:mm 1 θ L E1 D 7(4X) e B A1 2A A C 7 (4X) eB SYMBOLS A A1 B C D E1 eB e L θ WEITRON http://www.weitron.com.tw MILLIMETERS MAX MIN 1.75 1.35 0.20 0.10 0.45 0.35 0.18 0.23 4.69 4.98 3.56 4.06 5.70 6.30 1.27 BSC 0.60 0.80 0 8 5/5 19-Nov-08