Product specification AP2304GN ▼ Simple Drive Requirement ▼ Small package outline D ▼ Surface mount package BVDSS 25V RDS(ON) 117mΩ ID 2.7A S SOT-23 Description G The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. D G S Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 25 V ±20 V 3 2.7 A 3 2.2 A 10 A Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1,2 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient http://www.twtysemi.com 3 [email protected] Max. Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2304GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance Max. Units 25 - - V - 0.1 - V/℃ - 117 mΩ VGS=4.5V, ID=2A - 190 mΩ VDS=VGS, ID=250uA 1 - 3 V VDS=4.5V, ID=2.5A - 3.4 - S Drain-Source Leakage Current (Tj=25 C) VDS=25V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=55oC) VDS=25V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=±20V - - ±100 nA ID=2.5A - 5.9 10 nC Gate Threshold Voltage gfs Forward Transconductance o IGSS 2 Typ. VGS=10V, ID=2.5A VGS(th) IDSS VGS=0V, ID=250uA Min. 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=15V - 0.8 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 2.1 - nC VDS=15V - 4.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 11.5 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=10V - 12 - ns tf Fall Time RD=15Ω - 3 - ns Ciss Input Capacitance VGS=0V - 110 - pF Coss Output Capacitance VDS=15V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 39 - pF Min. Typ. - - 1 A - - 10 A - - 1.2 V Source-Drain Diode Symbol Parameter IS Continuous Source Current ( Body Diode ) ISM Pulsed Source Current ( Body Diode ) 1 VSD 2 Forward On Voltage Test Conditions VD=VG=0V , VS=1.2V IS=1.25A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2