Product specification AP2301GN ▼ Simple Drive Requirement ▼ Small Package Outline D ▼ Surface Mount Device BVDSS -20V RDS(ON) 130mΩ ID - 2.6A S SOT-23 Description G D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. G S The SOT-23 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units - 20 V ± 12 V 3 -2.6 A 3 -2.1 A Continuous Drain Current Continuous Drain Current 1,2 IDM Pulsed Drain Current -10 A PD@TA=25℃ Total Power Dissipation 1.38 W Linear Derating Factor 0.01 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient http://www.twtysemi.com 3 [email protected] Max. Value Unit 90 ℃/W 4008-318-123 1 of 2 Product specification AP2301GN Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. -20 - - V - -0.1 - V/℃ VGS=-5V, ID=-2.8A - - 130 mΩ VGS=-2.8V, ID=-2.0A - - 190 mΩ VDS=VGS, ID=-250uA -0.5 - - V VDS=-5V, ID=-2.8A - 4.4 - S Drain-Source Leakage Current (Tj=25 C) VDS=-20V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=70oC) VDS=-16V, VGS=0V - - -10 uA Gate-Source Leakage VGS=±12V - - ±100 nA ID=-2.8A - 5.2 10 nC BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) VGS=0V, ID=-250uA Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance o IDSS IGSS 2 2 Max. Units Qg Total Gate Charge Qgs Gate-Source Charge VDS=-6V - 1.36 - nC Qgd Gate-Drain ("Miller") Charge VGS=-5V - 0.6 - nC VDS=-15V - 5.2 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 9.7 - ns td(off) Turn-off Delay Time RG=6Ω,VGS=-10V - 19 - ns tf Fall Time RD=15Ω - 29 - ns Ciss Input Capacitance VGS=0V - 295 - pF Coss Output Capacitance VDS=-6V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 65 - pF Min. Typ. - - -1 A - - -10 A - - -1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=-1.2V Continuous Source Current ( Body Diode ) Pulsed Source Current ( Body Diode ) 2 Forward On Voltage http://www.twtysemi.com 1 Tj=25℃, IS=-1.6A, VGS=0V [email protected] 4008-318-123 Max. Units 2 of 2