B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features ■ 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 9.0nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well G D suited for high efficiency switch mode power supply. S TO220 Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 2.0 A Continuous Drain Current(@Tc=100℃) 1.3 A 8 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 140 mJ EAR Repetitive Avalanche Energy (Note 1) 6.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns 54 W 0.43 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes Thermal Characteristics Parameter Symbol RQJC Thermal Resistance, Junction-to-Case RQCS Thermal Resistance, Case-to-Sink RQJA Thermal Resistance, Junction-to-Ambient Min Value Typ Max - - 2.3 ℃/W 0.5 - - ℃/W - - 62.5 ℃/W Units Rev. D Nov.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 B WFP2N60 FP2N60B Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V VDS = 600 V, VGS = 0 V - - 10 μA Drain cut−off current IDSS VDS = 480 V, Tc = 125°°C - - 100 μA 600 - - V ID=250μA, Referenced to 25℃ - 0.5 - V/℃ Drain−source breakdown voltage Break Voltage Temperature Coefficient V(BR)DSS ΔBVDSS/ ΔTJ ID = 250 μA, VGS = 0 V Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID =1A - 4.5 4.7 Ω Forward Transconductance gfs VDS = 50 V, ID =1A - 2.25 - S Input capacitance Ciss VDS = 25 V, - 280 330 Reverse transfer capacitance Crss VGS = 0 V, - 45 55 Output capacitance Coss f = 1 MHz - 4.5 7 Rise time tr VDD =300 V, - 10 28 Turn−on time ton ID = 2 A - 25 55 Fall time tf RG=25 Ω - 20 60 Turn−off time toff - 25 60 - 9.0 12 - 1.7 - - 4.5 - Switching time pF ns (Note4,5) Total gate charge (gate−source VDD = 320 V, Qg plus gate−drain) VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 2 A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 2 A Pulse drain reverse current IDRP - - - 8 A Forward voltage (diode) VDSF IDR = 2 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 2 A, VGS = 0 V, - 180 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 0.72 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance B WFP2N60 FP2N60B Fig. 1 On-State Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Current Characteristics Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance B WFP2N60 FP2N60B Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance B WFP2N60 FP2N60B Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance B WFP2N60 FP2N60B Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance B WFP2N60 FP2N60B TO-220 Package Dimension Unit: mm 7/7 Steady, all for your advance