WFP830 Silicon N-Channel MOSFET Features ■ 4.5A,500V,RDS(on)(Max 1.5Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 32nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor G D correction and half bridge and full bridge resonant topology line a S TO220 electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS ID Parameter Value Units Drain Source Voltage 500 V Continuous Drain Current(@Tc=25℃) 4.5 A Continuous Drain Current(@Tc=100℃) 2.9 A 18 A ±30 V IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 300 mJ EAR Repetitive Avalanche Energy (Note 1) 7.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns 73 W 0.55 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD TJ, Tstg TL Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol Parameter Min Value Typ Max 1.7 ℃/W Units RQJC Thermal Resistance, Junction-to-Case - - RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev, C Nov. 2008 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T02-2 WFP830 Electrical Characteristics (Tc = 25 25°°C) Characteristics Gate leakage current Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS =500 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 500 - - V Break Voltage Temperature Coefficient ΔBVDSS/ ID=250μA, Referenced to 25℃ - 0.55 - V/℃ Gate−source breakdown voltage Drain cut−off current ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 2.25A - 1.16 1.5 Ω Forward Transconductance gfs VDS = 40 V, ID =2.25A - 4.2 Input capacitance Ciss VDS = 25 V, - 800 1050 Reverse transfer capacitance Crss VGS = 0 V, - 76 100 Output capacitance Coss f = 1 MHz - 17 22 Rise time tr VDD =250 V, - 15 40 Turn−on time ton ID = 4.5 A - 40 90 Fall time tf RG=25 Ω - 85 180 Turn−off time toff - 45 100 - 32 44 - 3.7 - - 15 - Switching time Total gate charge (gate−source Qg plus gate−drain) Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd S pF ns (Note4,5) VDD = 400 V, VGS = 10 V, nC ID = 4.5 A (Note4,5) −Drain Ratings and Characteristics (Ta = 25 Source Source− 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 4.5 A Pulse drain reverse current IDRP - - - 18 A Forward voltage (diode) VDSF IDR = 4.5 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR =4.5 A, VGS = 0 V, - 305 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 2.6 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=24mH,IAS=4.5A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤4.5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WFP830 Fig. 1 On-State Characteristics Fig.3 Capacitance Variation vs Drain Voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Breakdown Voltage Variation vs Temperature Fig.6 Gate Charge Characteristics 3/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WFP830 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WFP830 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WFP830 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. WFP830 TO-220C Package Dimension Unit: mm 7/7 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.