WGW15G120 Low Loss IGBT Features 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=25℃ low Gate charge(Typ.= 85nC) NPT Technology, Positive temperature coefficient Low EMI Pb-free lead plating; RoHS compliant Applications General purpose inverter Frequency converters Induction Heating(IH) Uninterrupted Power Supply(UPS) G C E TO3P(N) Absolute Maximum Ratings(Tc=25℃) Symbol Parameter Value Unit 1200 V Tc=25℃ 30 A Tc=100℃ 15 A Tp limited by TJ 45 A ±20 V VCES Collector-Emitter Voltage IC DC Collector Current ICP Collector pulse Current VGES Gate-Emitter Voltage tSC Short circuit withstand time VGE=10V,VCE≤1200V,TJ≤150℃ 10 μs Turn-off safe area VCE≤1200V,TJ≤150℃ 45 A 150 W PD Total Dissipation TJ Operation Junction Temperature -40 ~ 150 ℃ TSTG Storage Temperature -50 ~ 150 ℃ TL Maximum Lead Temperature for Soldering Purposes 300 ℃ Thermal Characteristics Symbol Parameter Value Min Typ Max Unit RQJC Thermal Resistance , Junction -to -Case - - 0.6 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 40 ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WGW15G120 Electrical Characteristics(Tc=25℃) Characteristics Min Typ Max Unit VGS=±30V,VCE=0V - - ±100 nA IC=0.5mA,VGE=0V 1200 - - V - 2.4 3.5 Tc=125℃ 2.8 - Tc=150℃ 3.0 - - - 0.2 Tc=100℃ - - 2.0 Tc=150℃ - - 2.5 4.5 - 6.5 V VCE=20V,ID=15A - 10 - S IC(SC) VGE=15V, VCE=600, tsc<10μs - 90 - A Total Gate Charge Qg VCE=960V, IC=15A, VGE=15V - 85 - nC Input capacitance Ciss VCE=25V, - 1700 2600 Reverse transfer capacitance Crss VGS=0V, - 128 200 Output capacitance Coss f=1MHz - 880 140 - 25 - - 60 - - 20 - - 95 - Gate-body leakage current Symbol IGES Collector-Emitter Breakdown Voltage V(BR)CES Collector-Emitter Saturation Voltage VCE(sat) Test Condition IC=15A, VGE=15V V VCE=1200V, Zero Gate Voltage Collector current ICES mA VGE=0V Gate threshold voltage Forward Transconductance Short Collector Current Turn-on delay time Switchi Turn-onRise time VGE(th) gfs VCE=VGE,ID=0.6mA Td(on) VCE=600V, tr IC=15A ng time Turn-off delay time Turn-off Fall time Td(off) pF ns RG=56Ω tf Turn-on energy Eon VCE=600V, - 58 - Turn-off energy Eoff IC=15A - 32 - Total swiitching energy Etotal RG=56Ω - 26 - mJ Anti-Parallet Diode Characteristics (Ta=25℃) Characteristics Symbol Test Condition Min Type Max Unit IS=15A,VGS=0V - - -2.7 V Forward voltage(diode) VDSF Reverse recovery time trr IS=10A,VGS=0V, R=800V - 150 - ns Reverse recovery charge Qrr dIDR / dt =750 A / µs - 1.2 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.Allowed number of short circuits:<1000; time 3.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 4. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance WGW15G120 Fig.2 Saturation Voltage Characteristics Fig.1 Out Characteristics Fig.3 Saturation Voltage vs Case Temperature Fig.5 Capacitance Characteristics Fig.4 Load Current vs Frequency Fig.6 Switching Loss vs Gate Resistance 3/7 Steady, all for your advance WGW15G120 Fig.7 Turn-on Characteristics vs Fig.8 Turn-off Characteristics vs Gate Resistance Gate Resistance Fig.9 Turn-on Characteristics vs Fig.10 Fig.9 Turn-off Characteristics vs Collector Current Collector Current Fig.11 Switching Loss vs Collector Current Fig.12 Out Gate Charge Characteristics 4/7 Steady, all for your advance WGW15G120 Fig.13 Forward Characteristics Fig.13 Stored Characteristics Fig.15 Reverse Recovery Current Characteristics Fig.17 Maximum Safe Operation Area Fig.16 Reverse Recovery Time Characteristics Fig.18 Turn-off Safe Operation Area 5/7 Steady, all for your advance WGW15G120 Fig.17 Maximum Safe Operation Area 6/7 Steady, all for your advance WGW15G120 TO-3PN Package Dimension Unit:mm 7/7 Steady, all for your advance