Power Transistors 2SD2573 Silicon NPN triple diffusion planar type For high current amplification, power amplification Unit: mm 0.85±0.1 1.0±0.1 0.8 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 80 V Collector-emitter voltage (Base open) VCEO 60 V Emitter-base voltage (Collector open) VEBO 6 V Collector current IC 3 A Peak collector current ICP 6 A Collector power dissipation TC = 25°C PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 16.0±1.0 2.5±0.1 0.65±0.1 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping 90˚ 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 25 mA, IB = 0 Collector-base cutoff current (Emitter open) ICBO VCB = 80 V, IE = 0 100 µA Collector-emitter cutoff current (Base open) ICEO VCE = 40 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 100 µA Forward current transfer ratio * hFE VCE = 4 V, IC = 0.5 A 2 500 VCE(sat) IC = 2 A, IB = 0.05 A Collector-emitter saturation voltage Transition frequency fT Conditions VCE = 12 V, IC = 0.2 A, f = 10 MHz Min Typ Max 60 Unit V 500 1.0 50 V MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE 500 to 1 000 800 to 1 500 1 200 to 2 500 Publication date: September 2003 SJD00278BED 1 2SD2573 IC VCE Ta=25˚C 3.0 1.6 IB=5.0mA Collector current IC (A) Collector power dissipation PC (W) Without heat sink 1.2 0.8 0.4 0 4.5mA 4.0mA 3.5mA 3.0mA 2.5mA 2.4 1.8 2.0mA 1.5mA 1.2 1.0mA 0.5mA 0.6 0 40 80 120 0 160 Ambient temperature Ta (°C) 0 2 Forward current transfer ratio hFE VCE=4V 2 000 Ta=75˚C 1 600 Ta=25˚C 1 200 Ta=–25˚C 400 1 10 100 Collector current IC (A) 2 6 8 10 12 Cob VCB 1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob hFE IC 800 4 Collector-emitter voltage VCE (V) 2 400 0 VCE(sat) IC 3.6 90 IE=0 f=1MHz Ta=25˚C 75 60 45 30 15 0 1 10 Collector-base voltage VCB (V) SJD00278BED 100 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 2.0 10 IC/IB=40 1 Ta=75˚C 10−1 10−2 10−3 0.01 Ta=25˚C Ta=–25˚C 0.1 1 Collector current IC (A) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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