MMBT4403W PNP Silicon Switching Transistor Elektronische Bauelemente RoHS Compliant Product SOT-323 A L COLLECTOR 3 Dim Min Max A 1.800 2.200 B 1.150 1.350 C 0.800 1.000 D 0.300 0.400 G 1.200 1.400 H 0.000 0.100 J 0.100 0.250 K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 V 0.280 0.420 B S Top View 3 1 BASE V 1 G 2 2 EMITTER C H D K J MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Collector – Base Voltage VCBO –40 Vdc Emitter – Base Voltage VEBO –5.0 Vdc IC –600 mAdc Collector Current — Continuous All Dimension in mm THERMAL CHARACTERISTICS Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Characteristic PD 200 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 200 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT4403W = K3T, 2T ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max –40 — –40 — –5.0 — — –0.1 — –0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(3) (IC = –1.0 mAdc, IB = 0) V(BR)CEO Collector – Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) V(BR)CBO Emitter – Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) IBEV Collector Cutoff Current (VCE = –35 Vdc, VEB = –0.4 Vdc) ICEX Vdc Vdc Vdc µAdc µAdc 1. FR– 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A v v Any changing of specification will not be informed individual Page 1 of 5 MMBT4403W PNP Silicon Switching Transistor Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 30 60 100 100 20 — — — 300 — — — –0.4 –0.75 –0.75 — –0.95 –1.3 200 — — 8.5 — 30 1.5 15 0.1 8.0 60 500 1.0 100 Unit ON CHARACTERISTICS DC Current Gain (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –150 mAdc, VCE = –2.0 Vdc)(3) (IC = –500 mAdc, VCE = –2.0 Vdc)(3) hFE Collector – Emitter Saturation Voltage(3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) Base – Emitter Saturation Voltage (3) (IC = –150 mAdc, IB = –15 mAdc) (IC = –500 mAdc, IB = –50 mAdc) VBE(sat) — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = –20 mAdc, VCE = –10 Vdc, f = 100 MHz) fT Collector–Base Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Ccb Emitter–Base Capacitance (VBE = –0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb Input Impedance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie Voltage Feedback Ratio (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre Small – Signal Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe Output Admittance (IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe MHz pF pF kΩ X 10– 4 — mmhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time 3. Pulse Test: Pulse Width ((VCC = –30 Vdc,, VEB = –2.0 Vdc,, IC = –150 mAdc, IB1 = –15 mAdc) td — 15 tr — 20 ((VCC = –30 Vdc,, IC = –150 mAdc,, IB1 = IB2 = –15 mAdc) ts — 225 tf — 30 v 300 ms, Duty Cycle v 2.0%. ns ns SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V – 30 V 200 Ω < 2 ns +2 V +14 V 0 0 1.0 kΩ – 16 V 10 to 100 µs, DUTY CYCLE = 2% Figure 1. Turn–On Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 200 Ω < 20 ns CS* < 10 pF 1.0 kΩ CS* < 10 pF –16 V 1.0 to 100 µs, DUTY CYCLE = 2% + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 2. Turn–Off Time Any changing of specification will not be informed individual Page 2 of 5 MMBT4403W PNP Silicon Switching Transistor Elektronische Bauelemente TRANSIENT CHARACTERISTICS 100°C 25°C 30 10 7.0 5.0 20 VCC = 30 V IC/IB = 10 Ceb Q, Charge (nC) Capacitance (pF) 3.0 10 7.0 Ccb 5.0 2.0 1.0 0.7 0.5 QT 0.3 QA 0.2 2.0 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 20 5.0 7.0 10 30 10 30 50 70 100 Reverse Voltage (V) IC, Collector Current (mA) Figure 3. Capacitances Figure 4. Charge Data 200 300 500 100 100 IC/IB = 10 70 70 VCC = 30 V IC/IB = 10 50 tr, Rise Time (ns) 50 t, Time (ns) 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 30 20 30 20 10 10 7.0 7.0 5.0 5.0 10 20 30 50 70 200 100 300 500 10 20 30 50 70 100 IC, Collector Current (mA) IC, Collector Current (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 300 500 200 ts', Storage Time (ns) IC/IB = 10 100 IC/IB = 20 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 10 20 30 50 70 100 200 300 500 IC, Collector Current (mA) Figure 7. Storage Time http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A Any changing of specification will not be informed individual Page 3 of 5 MMBT4403W PNP Silicon Switching Transistor Elektronische Bauelemente SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, Noise Figure (dB) NF, Noise Figure (dB) 8 IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ 6 4 2 4 2 RS = OPTIMUM SOURCE RESISTANCE 0 0.01 0.02 0.05 0.1 0.2 IC = 50 µA 100 µA 500 µA 1.0 mA 6 0 0.5 1.0 2.0 5.0 10 20 50 50 100 100 200 500 1k 2k 5k 10 k 20 k f, Frequency (kHz) RS , Source Resistance (OHMS) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 50 k h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C This group of graphs illustrates the relationship between selected from the MMBT4403W lines, and the same units hfe and other “h” parameters for this series of transistors. To were used to develop the correspondingly–numbered curves obtain these curves, a high–gain and a low–gain unit were on each graph. 100 k 700 50 k hfe, Current Gain 500 300 200 MMBT4403W UNIT 1 MMBT4403W UNIT 2 100 70 50 hje, Input Impedance (OHMS) 1000 MMBT4403W UNIT 1 MMBT4403W UNIT 2 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 100 5.0 7.0 10 0.5 0.7 1.0 2.0 3.0 Figure 10. Current Gain Figure 11. Input Impedance 5.0 7.0 10 500 MMBT4403W UNIT 1 MMBT4403W UNIT 2 5.0 2.0 1.0 0.5 0.2 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 hoe, Output Admittance (µ mhos) hre, Voltage Feedback RATIO (X10 -4) 0.3 IC, Collector Current (mAdc) 10 100 50 20 MMBT4403W UNIT 1 MMBT4403W UNIT 2 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, Collector Current (mAdc) IC, Collector Current (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 0.2 IC, Collector Current (mAdc) 20 0.1 0.1 0.1 5.0 7.0 10 Any changing of specification will not be informed individual Page 4 of 5 MMBT4403W PNP Silicon Switching Transistor Elektronische Bauelemente STATIC CHARACTERISTICS 3.0 VCE = 1.0 V VCE = 10 V hFE, Normalized Current Gain 2.0 TJ = 125°C 25°C 1.0 – 55°C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 200 100 300 500 IC, Collector Current (mA) Figure 14. DC Current Gain Vce, Collector-Emitter Voltage (V) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IB, Base Current (mA) Figure 15. Collector Saturation Region 0.5 TJ = 25°C 0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(sat) @ VCE = 10 V Coefficient (mV/ ° C ) Voltage (V) 1.0 0.4 0.2 qVC for VCE(sat) 0.5 1.0 1.5 qVS for VBE 2.0 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 http://www.SeCoSGmbH.com 01-Jun-2002 Rev. A 1.0 2.0 5.0 10 20 50 100 200 500 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, Collector Current (mA) IC, Collector Current (mA) Figure 16. “On” Voltages Figure 17. Temperature Coefficients 500 Any changing of specification will not be informed individual Page 5 of 5