APTC60AM18SC Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 600V RDSon = 18mW max @ Tj = 25°C ID = 143A @ Tc = 25°C Application · Motor control · Switched Mode Power Supplies · Uninterruptible Power Supplies Features · - G1 VBUS 0/VBUS OUT · Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF · · Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration · S1 Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Benefits · · · · S2 G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 143 107 572 ±30 18 833 20 1 1800 Unit V A V mW W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–7 APTC60AM18SC – Rev 1 May, 2004 Symbol VDSS APTC60AM18SC All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVDSS Drain - Source Breakdown Voltage Test Conditions VGS = 0V, ID = 1000µA VGS = 0V,VDS = 600V Tj = 25°C VGS = 0V,VDS = 600V Tj = 125°C VGS = 10V, ID = 71.5A VGS = VDS, ID = 4mA VGS = ±20 V, VDS = 0V Min 600 2.1 3 Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Min Typ 28 10.2 0.85 Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 143A Td(on) Turn-on Delay Time IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Typ Max Unit V 100 1000 18 3.9 ±200 mW V nA Max Unit µA Dynamic Characteristics Symbol Ciss Coss Crss Tr Td(off) Tf 1036 Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u Eon Turn-on Switching Energy Eoff Turn-off Switching Energy u nC 116 444 21 Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A RG = 1.2W Rise Time nF 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 1608 µJ 3920 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 2630 µJ 4824 u In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs Min Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C APT website – http://www.advancedpower.com Max Unit A 1.15 V ns nC 2–7 APTC60AM18SC – Rev 1 May, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTC60AM18SC Parallel diode ratings and characteristics Symbol Characteristic Maximum Average Forward Current IF(AV) Test Conditions 50% duty cycle Min Tc = 125°C Tj = 25°C Tj = 175°C Typ 80 1.6 2.0 VF Diode Forward Voltage IF = 80A QC Total Capacitive Charge IF = 80A, VR = 300V di/dt =2000A/µs 112 Q Total Capacitance f = 1MHz, VR = 200V 520 f = 1MHz, VR = 400V 400 Max 1.8 2.4 Unit A V nC pF Thermal and package characteristics Symbol Characteristic Min Transistor Series diode Parallel diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.15 0.46 0.35 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–7 APTC60AM18SC – Rev 1 May, 2004 Package outline APTC60AM18SC Typical CoolMOS Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.9 0.12 0.7 0.1 0.5 0.08 0.06 0.3 0.04 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics Low Voltage Output Characteristics 540 VGS=15&10V 600 6.5V 6V 500 400 5.5V 300 5V 200 4.5V 4V 100 0 0 360 270 180 TJ=125°C 90 TJ=25°C TJ=-55°C 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 160 RDS(on) vs Drain Current 1.1 Normalized to VGS=10V @ 71.5A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 140 120 100 80 60 40 20 0 0 40 80 120 160 ID, Drain Current (A) 200 240 25 50 75 100 125 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 150 4–7 APTC60AM18SC – Rev 1 May, 2004 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 450 0 ID, DC Drain Current (A) ID, Drain Current (A) 700 ID, Drain Current (A) 800 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 limited by RDSon 100 µs 100 1 ms 10 10 ms Single pulse DC line TJ=150°C 0.6 1 -50 -25 0 25 50 75 100 125 150 1 Coss 10000 1000 Crss 100 10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V) 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 Ciss 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) C, Capacitance (pF) VGS=10V ID= 143A 14 ID=143A TJ=25°C 12 10 VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 200 APT website – http://www.advancedpower.com 400 600 800 Gate Charge (nC) 1000 1200 5–7 APTC60AM18SC – Rev 1 May, 2004 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60AM18SC APTC60AM18SC Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=1.2Ω TJ=125°C L=100µH 200 150 100 50 0 40 80 120 160 200 80 60 40 tr 0 240 0 40 ID, Drain Current (A) 160 200 240 Switching Energy vs Gate Resistance Eoff Eon VDS=400V ID=143A TJ=125°C L=100µH 15 Eoff 10 Eon 5 0 40 80 120 160 200 ID, Drain Current (A) 240 0 Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=400V D=50% RG=1.2Ω TJ=125°C 100 80 60 40 20 0 30 50 70 90 110 ID, Drain Current (A) 5 7.5 10 12.5 Gate Resistance (Ohms) 140 120 2.5 130 Source to Drain Diode Forward Voltage 1000 TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, Source to Drain Voltage (V) APT website – http://www.advancedpower.com 6–7 APTC60AM18SC – Rev 1 May, 2004 0 Frequency (kHz) 120 20 Switching Energy (mJ) Switching Energy (mJ) VDS=400V RG=1.2Ω TJ=125°C L=100µH 80 ID, Drain Current (A) Switching Energy vs Current 10 9 8 7 6 5 4 3 2 1 0 tf 20 td(on) 0 VDS=400V RG=1.2Ω TJ=125°C L=100µH 100 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60AM18SC Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.4 0.35 0.9 0.3 0.7 0.25 0.2 0.5 0.15 0.3 0.1 0.1 0.05 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) 1600 TJ=25°C 120 TJ=75°C IR Reverse Current (µA) IF Forward Current (A) Reverse Characteristics Forward Characteristics 160 TJ=175°C 80 TJ=125°C 40 0 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) 1400 TJ=175°C 1200 TJ=125°C 1000 800 TJ=75°C 600 400 TJ=25°C 200 0 200 300 400 500 600 700 VR Reverse Voltage (V) 800 Capacitance vs.Reverse Voltage C, Capacitance (pF) 3000 2500 2000 1500 1000 500 0 10 100 VR Reverse Voltage 1000 “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 7–7 APTC60AM18SC – Rev 1 May, 2004 1