ADPOW APTM100UM45F-ALN

APTM100UM45F-AlN
VDSS = 1000V
RDSon = 45mΩ typ @ Tj = 25°C
ID = 215A @ Tc = 25°C
Single Switch
MOSFET Power Module
SK
S
D
DK
G
S
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
D
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
SK
G
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
215
160
860
±30
55
5000
30
50
3200
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100UM45F-AlN – Rev 1 August, 2005
DK
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
APTM100UM45F-AlN
All ratings @ Tj = 25°C unless otherwise specified
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Test Conditions
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 107.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery X
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
45
3
Min
VGS = 10V
VBus = 500V
ID = 215A
Typ
42.7
7.6
1.3
1602
Unit
µA
mA
mΩ
V
nA
Max
Unit
nF
nC
1038
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 215A
R G = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 215A, R G = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 215A, R G = 0.5Ω
Test Conditions
18
14
140
ns
55
7.2
mJ
4.3
12
mJ
5.8
Min
Typ
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 215A
IS = - 215A
VR = 500V
diS/dt = 600A/µs
Max
600
3
55
5
±600
204
Source - Drain diode ratings and characteristics
Symbol
IS
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
12
Tj = 125°C
36
Max
215
160
1.3
18
310
625
Unit
A
V
V/ns
ns
µC
X dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 215A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM100UM45F-AlN – Rev 1 August, 2005
Electrical Characteristics
Symbol Characteristic
APTM100UM45F-AlN
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Torque
Mounting torque
Wt
Package Weight
Min
Transistor
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To Heatsink
For teminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.025
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM100UM45F-AlN – Rev 1 August, 2005
SP6 Package outline (dimensions in mm)
APTM100UM45F-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
720
540
VGS =15, 10V
7V
420
ID, Drain Current (A)
6.5V
360
300
6V
240
180
120
5.5V
60
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
600
480
360
TJ=25°C
240
120
TJ =125°C
5V
0
0
5
10
15
20
25
30
0
ID, DC Drain Current (A)
Normalized to
VGS =10V @ 107.5A
1.3
1.2
1.1
VGS=10V
VGS=20V
1
2
3
4
5
6
7
8
DC Drain Current vs Case Temperature
240
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
0.9
0.8
210
180
150
120
90
60
30
0
0
120
240
360
ID, Drain Current (A)
480
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM100UM45F-AlN – Rev 1 August, 2005
I D, Drain Current (A)
480
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=107.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by R DSon
1ms
100
10ms
10
Single pulse
TJ=150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
Coss
10000
Crss
1000
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
14
ID=215A
TJ=25°C
12
10
VDS=200V
VDS=500V
VDS=800V
8
6
4
2
0
0
350
APT website – http://www.advancedpower.com
700
1050 1400 1750 2100
Gate Charge (nC)
5–6
APTM100UM45F-AlN – Rev 1 August, 2005
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100UM45F-AlN
APTM100UM45F-AlN
Delay Times vs Current
Rise and Fall times vs Current
100
t d(off)
120
V DS=670V
RG =0.5Ω
T J=125°C
L=100µH
90
60
td(on)
30
VDS=670V
RG=0.5Ω
T J=125°C
L=100µH
80
tr and tf (ns)
60
40
tr
20
0
0
80 120 160 200 240 280 320 360 400
80 120 160 200 240 280 320 360 400
ID, Drain Current (A)
I D, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
VDS=670V
RG=0.5Ω
TJ=125°C
L=100µH
20
16
Eoff
12
VDS=670V
ID=215A
T J=125°C
L=100µH
36
Eon
Switching Energy (mJ)
Switching Energy (mJ)
24
8
4
0
30
24
Eon
12
6
0
0
1
ID, Drain Current (A)
Operating Frequency vs Drain Current
4
5
6
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
Frequency (kHz)
3
1000
250
200
50
2
Gate Resistance (Ohms)
300
100
Eoff
18
80 120 160 200 240 280 320 360 400
150
tf
ZVS
ZCS
VDS=670V
D=50%
RG=0.5Ω
T J=125°C
T C=75°C
Hard
switching
0
20
50
80
110 140 170
ID, Drain Current (A)
200
TJ=150°C
100
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100UM45F-AlN – Rev 1 August, 2005
td(on) and td(off) (ns)
150